A method for manufacturing a multi-stage compound eye lens includes the steps of manufacturing a micropillar array using a photoetching method, then sputtering ZnO on the surface of the micropillar array, jet printing an ultraviolet curing adhesive onto gaps in the micropillar array using a micro jet printing machine, and controlling the morphology of microlens using the number of droplet dropping instances to obtain a microlens array; further respectively dissolving hexamethyl tetramine and zinc nitrate in deionized water, then pouring the hexamethyl tetramine solution into the zinc nitrate solution to obtain a mixed solution, placing the microlens array into the mixed solution, and placing is in a water bath kettle for a water bath, and finally, removing the microlens array from the mixed solution, rinsing it with deionized water, and drying same to obtain the multi-stage compound eye lens.

A semiconductor nanoparticle aggregate that is an aggregate of core/shell type semiconductor nanoparticles including a core including In and P and a shell having one or more layers, in which a peak wavelength of an emission spectrum of the semiconductor nanoparticle aggregate is from 515 nm to 535 nm and a full width at half maximum of the emission spectrum is 43 nm or less. For each semiconductor nanoparticle, (1) an average value of a full width at half maximum of an emission spectrum is 15 nm or more, (2) a standard deviation of a peak wavelength of the emission spectrum is 12 nm or less, and (3) a standard deviation of the full width at half maximum of the emission spectrum is 2 nm or more.

A semiconductor nanoparticle aggregate that is an aggregate of core/shell type semiconductor nanoparticles including a core including In and P and a shell having one or more layers, in which a peak wavelength of an emission spectrum of the semiconductor nanoparticle aggregate is from 515 nm to 535 nm and a full width at half maximum of the emission spectrum is 43 nm or less. For each semiconductor nanoparticle, (1) an average value of a full width at half maximum of an emission spectrum is 15 nm or more, (2) a standard deviation of a peak wavelength of the emission spectrum is 12 nm or less, and (3) a standard deviation of the full width at half maximum of the emission spectrum is 2 nm or more.

The present disclosure provides systems, methods and apparatuses for inducing a desired biological response in an organism through the use of one or more repetitive signals from one or a series of LED lights designed to emit the signal with multiple pulsed components. Each component of the signal contains a one or more light color spectrum or wavelength that is within 50 nm of the peak absorption of a photon receptor of the organism corresponding to the desired biological response. Each component has a repetitive ON duration with an OFF duration and an intensity where the relationship between the ON duration and OFF duration of the first component and the second component induces the desired response in the organism through the stimulation or excitation of a molecule associated with a photoreceptor and the reset of the molecule.

An evaluation method includes a step of disposing a sensitive color plate between two polarization plates disposed in a crossed Nicols shape, a step of disposing a measurement material that is a transparent material containing a nanowire between any of one polarization plate or the other polarization plate of the polarization plates and the sensitive color plate, a step of making white light incident from a side of one of the disposed polarization plates, a step of observing a color of the measurement material from a side of the other polarization plate, and a step of evaluating an orientation direction of the nanowire from the color of the measurement material obtained by observation.

An imaging device includes: a semiconductor substrate; a plurality of pixel electrodes located above the semiconductor substrate and each electrically connected to the semiconductor substrate; a counter electrode located above the plurality of pixel electrodes; a first photoelectric conversion layer located between the counter electrode and the plurality of pixel electrodes; and at least one first light-shielding body located in the first photoelectric conversion layer or above the first photoelectric conversion layer. The first photoelectric conversion layer contains semiconductor quantum dots that absorb light in a first wavelength range and a coating material that covers the semiconductor quantum dots, the coating material absorbing light in a second wavelength range, the coating material emitting fluorescence in a third wavelength range. The at least one first light-shielding body absorbs or reflects light with a wavelength in at least part of the second wavelength range.

Provided is an image sensor including a sensor array including a plurality of light-sensors respectively including an optoelectronic device, the optoelectronic device including a first electrode, a second electrode spaced apart from the first electrode, and an active layer provided between the first electrode and the second electrode, the active layer including a plurality of quantum dot layers having different energy bands, and a circuit including circuits respectively connected to the plurality of light-sensors and configured to readout an optoelectronic signal generated from each of the plurality of light-sensors.

A quantum dot, a quantum dot composite including the quantum dot, a composition for preparing the quantum dot composite, a display panel including the quantum dot composite, and an electronic apparatus including the display panel. The quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, the semiconductor nanocrystal core having an emission peak wavelength from about 600 nm to about 650 nm, or an emission peak wavelength from about 500 nm to about 550 nm, and an area of a peak from about 400° C. to about 500° C. is 0.17 times to 0.5 times relative to an area of a peak from about 200° C. to about 300° C. in a thermogravimetric analysis (TGA) graph as determined with a differential scanning calorimeter (DSC).

Provided are a method of manufacturing a multi-component semiconductor nanocrystal, a multi-component semiconductor nanocrystal manufactured by the method, and a quantum dot including the same. The method includes irradiating microwaves to a semiconductor nanocrystal synthesis composition, and the semiconductor nanocrystal synthesis composition includes a precursor including a Group I element, a precursor including a Group II element, a precursor including a Group III element, a precursor including a Group V element, a precursor including a Group VI element, or any combination thereof.

A method for providing an electric waveform at a cryogenic temperatures includes providing an optical signal, which comprises an optical waveform, guiding the optical signal into a cryogenic chamber, and converting the optical waveform of the optical signal into an electric waveform inside the cryogenic chamber.