The invention discloses a porous intermetallic compound and preparation method and application thereof. The pore structure of the porous intermetallic compound includes micropores and mesopores, and the micropores and mesopores are distributed in disorder, wherein the content of the micropores accounts for 6-68%, and the content of mesopores accounts for 32-92%; the specific surface area of the porous intermetallic compound is 50-1600 m.sup.2/g, and the porous intermetallic compound is a porous copper silicide intermetallic compound or porous copper-chalcogen intermetallic compound. The invention provides preparation methods of the porous intermetallic compound, and also provides an application of the porous intermetallic compound as a catalyst in the reaction of acetylene hydrochlorination to synthesize vinyl chloride. The porous intermetallic compound catalyst prepared by the invention can carry out the acetylene hydrochlorination reaction in a wide space velocity range, and has good catalytic activity.

The invention discloses a porous intermetallic compound and preparation method and application thereof. The pore structure of the porous intermetallic compound includes micropores and mesopores, and the micropores and mesopores are distributed in disorder, wherein the content of the micropores accounts for 6-68%, and the content of mesopores accounts for 32-92%; the specific surface area of the porous intermetallic compound is 50-1600 m.sup.2/g, and the porous intermetallic compound is a porous copper silicide intermetallic compound or porous copper-chalcogen intermetallic compound. The invention provides preparation methods of the porous intermetallic compound, and also provides an application of the porous intermetallic compound as a catalyst in the reaction of acetylene hydrochlorination to synthesize vinyl chloride. The porous intermetallic compound catalyst prepared by the invention can carry out the acetylene hydrochlorination reaction in a wide space velocity range, and has good catalytic activity.

An object of the present invention is to provide a photocatalyst for water splitting, which can form a water splitting device that is excellent in durability and responsiveness to visible light and excellent in the amount of generated gas, and a water splitting device having the photocatalyst for water splitting. A photocatalyst for water splitting according to the embodiment of the present invention is a photocatalyst for water splitting, which is used for an electrode that generates gas by irradiation with light in a state of being immersed in water, and includes a compound represented by a formula, (Ln).sub.2CuO.sub.4. In the formula, Ln represents a lanthanoid, and a part of Ln's may be substituted with an element of Groups II to IV of the periodic table.

An object of the present invention is to provide a photocatalyst for water splitting, which can form a water splitting device that is excellent in durability and responsiveness to visible light and excellent in the amount of generated gas, and a water splitting device having the photocatalyst for water splitting. A photocatalyst for water splitting according to the embodiment of the present invention is a photocatalyst for water splitting, which is used for an electrode that generates gas by irradiation with light in a state of being immersed in water, and includes a compound represented by a formula, (Ln).sub.2CuO.sub.4. In the formula, Ln represents a lanthanoid, and a part of Ln's may be substituted with an element of Groups II to IV of the periodic table.

Thin films of nickel-copper binary oxynitride (NiCuO.sub.xN.sub.y) were deposited on the surface of AISI 3161 stainless steel and glass substrates using reactive phase RF sputtering with a thickness between 700 and 2100 nm under different deposition conditions from a bimetallic precursor target of nickel and copper under specific conditions, such as: base pressure, working pressure, argon flow, oxygen flow, nitrogen flow, power the NiCu precursor target, target-substrate distance and deposition time. The films were characterized and made it possible to carry out a preliminary study of biocompatibility and a characterization according to their optical properties

By using a potassium ion secondary battery positive electrode active material comprising a potassium compound represented by general formula (1): K.sub.nMO.sub.m, wherein M is copper or iron, n is 0.5 to 3.5, and m is 1.5 to 2.5, provided is a potassium ion secondary battery positive electrode active material having higher theoretical discharge capacity and higher effective capacity than a potassium secondary battery using Prussian blue as a positive electrode active material.

By using a potassium ion secondary battery positive electrode active material comprising a potassium compound represented by general formula (1): K.sub.nMO.sub.m, wherein M is copper or iron, n is 0.5 to 3.5, and m is 1.5 to 2.5, provided is a potassium ion secondary battery positive electrode active material having higher theoretical discharge capacity and higher effective capacity than a potassium secondary battery using Prussian blue as a positive electrode active material.

The present disclosure provides a copper extraction method via iron modification and a copper extraction apparatus to perform the method. The method involves adding iron to an acidic solution in an reactor and oxidizing the iron. The method includes adding a copper-containing acidic solution and adding hydrogen as a reaction promoter into the reactor. Thus, the method may artificially modify the iron element to a copper element. Thus, the iron is used to extract a large amount of copper. This method may be as economical as copper mining.

Disclosed are a superconductor having improved critical current density when exposed to high-energy neutron radiation and high magnetic fields, such as found in a compact nuclear fusion reactor, and a method of making the same. The method includes, prior to deployment in the exposure environment, irradiating a polycrystalline (e.g. cuprate) superconductor with ionic matter or neutrons at a cryogenic temperature to create weak magnetic flux pinning sites, such as point defects or small defect clusters. Irradiation temperature is chosen, for example as a function of the superconducting material, so that irradiation creates the beneficial flux pinning sites while avoiding detrimental widening of the boundaries of the crystalline grains caused by diffusion of the displaced atoms. Such a superconductor in a coated-conductor tape is expected to be beneficial when used, for example, as a toroidal field coil in a fusion reactor when cooled well below its critical temperature.

A memory structure formed above a semiconductor substrate includes two or more modules each formed on top of each other separated by a layer of global interconnect conductors. Each memory module may include a 3-dimensional array of memory transistors organized as NOR array strings. Each 3-dimensional array of memory transistors is provided vertical local word lines as gate electrodes to the memory transistors. These vertical local word lines are connected by the layers of global interconnect conductors below and above the 3-dimensional array of memory transistors to circuitry formed in the semiconductor substrate.