C01G9/00

Polar Oxysulfide for Nonlinear Optical Applications

Single crystals of a new noncentrosymmetric polar oxysulfide SrZn.sub.2S.sub.2O (s.g. Pmn2.sub.1) grown in a eutectic KF-KCl flux with unusual wurtzite-like slabs consisting of close-packed corrugated double layers of ZnS.sub.3O tetrahedra vertically separated from each other by Sr atoms and methods of making same.

SOLID ELECTROLYTE MATERIAL AND BATTERY
20200335817 · 2020-10-22 ·

A solid electrolyte material contains Li, M, and X. M is at least one selected from metallic elements, and X is at least one selected from the group consisting of Cl, Br, and I. A plurality of atoms of X form a sublattice having a closest packed structure. An average distance between two adjacent atoms of X among the plurality of atoms of X is 1.8% or more larger than a distance between two adjacent atoms of X in a rock-salt structure composed only of Li and X.

Composition and process for removing chlorides from a gaseous stream
10737237 · 2020-08-11 · ·

A composition capable of removing chlorides from a gaseous stream and a process of using same. The compositions have sufficient chloride capacity, offer comparable creation of green oil, and have sufficient structural integrity to be utilized as sorbents in a chloride removal process. Generally, the compositions include a first zinc carbonate, a second zinc carbonate different than the first zinc carbonate and an alumina material. The composition has been cured at a temperature between about 149 to 399 C. The first zinc carbonate may comprise hydrozincite and the second zinc carbonate may comprise smithsonite.

Composition and process for removing chlorides from a gaseous stream
10737237 · 2020-08-11 · ·

A composition capable of removing chlorides from a gaseous stream and a process of using same. The compositions have sufficient chloride capacity, offer comparable creation of green oil, and have sufficient structural integrity to be utilized as sorbents in a chloride removal process. Generally, the compositions include a first zinc carbonate, a second zinc carbonate different than the first zinc carbonate and an alumina material. The composition has been cured at a temperature between about 149 to 399 C. The first zinc carbonate may comprise hydrozincite and the second zinc carbonate may comprise smithsonite.

Zinc nitride compound and method for producing same

The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn.sub.2N.sub.2 or the chemical formula X.sup.1.sub.2ZnN.sub.2 wherein X.sup.1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

Zinc nitride compound and method for producing same

The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn.sub.2N.sub.2 or the chemical formula X.sup.1.sub.2ZnN.sub.2 wherein X.sup.1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

Polar oxysulfide for nonlinear optical applications

Single crystals of a new noncentrosymmetric polar oxysulfide SrZn.sub.2S.sub.2O (s.g. Pmn2.sub.1) grown in a eutectic KFKCl flux with unusual wurtzite-like slabs consisting of close-packed corrugated double layers of ZnS.sub.3O tetrahedra vertically separated from each other by Sr atoms and methods of making same.

COMPOSITIONS OF METAL OXIDE SEMICONDUCTOR NANOMATERIALS
20200231459 · 2020-07-23 ·

The present invention provides composition comprising a metal oxide semiconductor nanomaterial.

PROCESSES FOR PREPARING METAL OXIDE SEMICONDUCTOR NANOMATERIALS
20200231460 · 2020-07-23 ·

The present invention provides processes for preparing metal oxide semiconductor nanomaterials.

PROCESSES FOR PREPARING METAL OXIDE SEMICONDUCTOR NANOMATERIALS
20200231460 · 2020-07-23 ·

The present invention provides processes for preparing metal oxide semiconductor nanomaterials.