A battery comprising an acidified metal oxide (“AMO”) material, preferably in monodisperse nanoparticulate form 20 nm or less in size, having a pH<7 when suspended in a 5 wt % aqueous solution and a Hammett function H.sub.0>−12, at least on its surface.

The present disclosure provides a method of preparing a chalcogen containing solution that is hydrazine free and hydrazinium free, wherein the method comprises: providing a predetermined amount of elemental chalcogen; providing a predetermined amount of elemental sulfur; providing an amine solvent; and combining the predetermined amount of elemental chalcogen and the predetermined amount of elemental sulfur in the amine solvent, thereby dissolving the elemental chalcogen and the elemental sulfur in the amine solvent. The chalcogen containing solution can advantageously be used as a precursor for the formation of a chalcogen containing layer on a substrate.

The present disclosure provides a method of preparing a chalcogen containing solution that is hydrazine free and hydrazinium free, wherein the method comprises: providing a predetermined amount of elemental chalcogen; providing a predetermined amount of elemental sulfur; providing an amine solvent; and combining the predetermined amount of elemental chalcogen and the predetermined amount of elemental sulfur in the amine solvent, thereby dissolving the elemental chalcogen and the elemental sulfur in the amine solvent. The chalcogen containing solution can advantageously be used as a precursor for the formation of a chalcogen containing layer on a substrate.

A sputtering target including an oxide with a low impurity concentration is provided. Provided is a method for manufacturing a sputtering target, including a first step of preparing a mixture including indium, zinc, an element M (the element M is aluminum, gallium, yttrium, or tin), and oxygen; a second step of raising a temperature of the mixture from a first temperature to a second temperature in a first atmosphere containing nitrogen at a concentration of higher than or equal to 90 vol % and lower than or equal to 100 vol %; and a third step of lowering the temperature of the mixture from the second temperature to a third temperature in a second atmosphere containing oxygen at a concentration of higher than or equal to 10 vol % and lower than or equal to 100 vol %.

A substrate with conductive film includes a base material; and a film of a conductive metal oxide arranged on an upper part of the base material. The film includes, by a top plan view, a first region and a second region, the second region is configured of a same material as the first region, and an electric resistance of the second region is higher than an electric resistance of the first region. The second region includes a part configured by a plurality of cellular sections surrounded by a plurality of fine cracks. In the part, each fine crack has a width of 1 nm to 50 nm, and each cellular section has a largest measure of less than 10 μm.

According to embodiments of the present invention, a method of forming an indium oxide nanowire including copper-based dopants is provided. The method includes providing an indium-based precursor material and a copper-based dopant precursor material, and performing a thermal evaporation process to vapourise the indium-based precursor material and the copper-based dopant precursor material to form an indium oxide nanowire comprising copper-based dopants on a substrate. According to further embodiments of the present invention, an indium oxide nanowire including copper-based dopants and a gas sensor are also provided. According to further embodiments of the present invention, a method of forming a plurality of nanowires including metal phthalocyanine, a nanowire arrangement and a gas sensor are also provided.

According to embodiments of the present invention, a method of forming an indium oxide nanowire including copper-based dopants is provided. The method includes providing an indium-based precursor material and a copper-based dopant precursor material, and performing a thermal evaporation process to vapourise the indium-based precursor material and the copper-based dopant precursor material to form an indium oxide nanowire comprising copper-based dopants on a substrate. According to further embodiments of the present invention, an indium oxide nanowire including copper-based dopants and a gas sensor are also provided. According to further embodiments of the present invention, a method of forming a plurality of nanowires including metal phthalocyanine, a nanowire arrangement and a gas sensor are also provided.

A homogeneous coating solution for forming a light-absorbing layer of a solar cell, the homogeneous solution including: at least one metal or metal compound selected from the group consisting of a group 11 metal, a group 13 metal, a group 11 metal compound and a group 13 metal compound; a Lewis base solvent; and a Lewis acid.

Provided is a method for recycling indium from a panel on which an electrode layer made of indium tin oxide (ITO) is formed, comprising: S1 —removing each of pattern layers on the panel to obtain particles formed by the pattern layers; S2 —adding an acid solution to the particles so as to dissolve the substances which can be dissolved in the acid solution, and then filtering to give a solution containing indium ion; S3 —adding an alkaline solution to the solution obtained in step S2, so that metal ions other than indium ion can form precipitates with hydroxyl ion; S4 —filtering off the precipitates formed in step S3; and S5 —evaporating the solution obtained in step S4 to obtain crystals of indium salt. The method improves the reusing rate of the defective panels, is helpful to environment protection, and saves resources.

Provided is a method for recycling indium from a panel on which an electrode layer made of indium tin oxide (ITO) is formed, comprising: S1 —removing each of pattern layers on the panel to obtain particles formed by the pattern layers; S2 —adding an acid solution to the particles so as to dissolve the substances which can be dissolved in the acid solution, and then filtering to give a solution containing indium ion; S3 —adding an alkaline solution to the solution obtained in step S2, so that metal ions other than indium ion can form precipitates with hydroxyl ion; S4 —filtering off the precipitates formed in step S3; and S5 —evaporating the solution obtained in step S4 to obtain crystals of indium salt. The method improves the reusing rate of the defective panels, is helpful to environment protection, and saves resources.