The invention relates to a method for preparing a material made of silicon and/or germanium nanowires, comprising the steps of: i) placing a source of silicon and/or a source of germanium in contact with a catalyst comprising a binary metal sulfide or a multinary metal sulfide, said metal(s) being selected from among Sn, In, Bi, Sb, Ga, Ti, Cu, and Zn, by means of which silicon and/or germanium nanowires are obtained, ii) optionally recovering the silicon and/or germanium nanowires obtained in step (i); the catalyst and, optionally, the source of silicon and/or the source of germanium being heated before, during and/or after being placed in contact under temperature and pressure conditions that allow the growth of the silicon and/or germanium nanowires.

The invention relates to a method for preparing a material made of silicon and/or germanium nanowires, comprising the steps of: i) placing a source of silicon and/or a source of germanium in contact with a catalyst comprising a binary metal sulfide or a multinary metal sulfide, said metal(s) being selected from among Sn, In, Bi, Sb, Ga, Ti, Cu, and Zn, by means of which silicon and/or germanium nanowires are obtained, ii) optionally recovering the silicon and/or germanium nanowires obtained in step (i); the catalyst and, optionally, the source of silicon and/or the source of germanium being heated before, during and/or after being placed in contact under temperature and pressure conditions that allow the growth of the silicon and/or germanium nanowires.

Method for manufacturing fluoro(hydro)carbon-substituted silicon or germanium quantum dots which comprises the steps of:—reacting a Zintl salt or intermetallic compound of post-transition metals or metalloids of silicon or germanium with a halogen-containing oxidizing agent to form halide-terminated silicon or germanium quantum dots,—reacting the halide-terminated silicon or germanium quantum dots with a fluoro(hydro)carbon agent selected from the group of metal-fluoro (hydro)carbon compounds of the formula MRq, wherein M is a metal selected from Group 1, 2, 4, 11, 12, 13, or 14 of the periodic table of elements, q is an integer which corresponds to the valence of the metal, and R is CFnHm-fluoro/hydro-carbon, wherein n is 1 or 2, m is 0 or 1, and the total of n and m is 2, wherein each R may be the same or different, metal-fluoro (hydro)carbon halide compounds of the formula NQaRp wherein N is a metal selected from Group 1, 2, 4, 11, 12, 13, or 14 of the periodic table of elements, Q is a halogen selected from F, Cl, Br, or I, wherein each Q may be the same or different, a and p are integers in the range of 1-3, and the total of a and p corresponds to the valence of the metal, and R is as defined above, and metal-fluoro (hydro)carbon compounds of the formula CuR2Li, wherein R is as defined above, to form fluoro(hydro)carbon-substituted silicon or germanium quantum dots. The method makes it possible to obtain quantum dots with a tailored emission spectrum with high quality in a stable process. The particles obtained by this process are also claimed.

Method for manufacturing fluoro(hydro)carbon-substituted silicon or germanium quantum dots which comprises the steps of:—reacting a Zintl salt or intermetallic compound of post-transition metals or metalloids of silicon or germanium with a halogen-containing oxidizing agent to form halide-terminated silicon or germanium quantum dots,—reacting the halide-terminated silicon or germanium quantum dots with a fluoro(hydro)carbon agent selected from the group of metal-fluoro (hydro)carbon compounds of the formula MRq, wherein M is a metal selected from Group 1, 2, 4, 11, 12, 13, or 14 of the periodic table of elements, q is an integer which corresponds to the valence of the metal, and R is CFnHm-fluoro/hydro-carbon, wherein n is 1 or 2, m is 0 or 1, and the total of n and m is 2, wherein each R may be the same or different, metal-fluoro (hydro)carbon halide compounds of the formula NQaRp wherein N is a metal selected from Group 1, 2, 4, 11, 12, 13, or 14 of the periodic table of elements, Q is a halogen selected from F, Cl, Br, or I, wherein each Q may be the same or different, a and p are integers in the range of 1-3, and the total of a and p corresponds to the valence of the metal, and R is as defined above, and metal-fluoro (hydro)carbon compounds of the formula CuR2Li, wherein R is as defined above, to form fluoro(hydro)carbon-substituted silicon or germanium quantum dots. The method makes it possible to obtain quantum dots with a tailored emission spectrum with high quality in a stable process. The particles obtained by this process are also claimed.

Provided are a barium germanium oxide having a 3-4 eV band gap, a method for producing the same, a sintered body thereof, and a target thereof. The barium germanium oxide includes at least Ba, Ge, and O, includes a crystal represented by a general formula of ABO.sub.3 (here, A includes at least Ba and B includes at least Ge), and has a hexagonal 6H-type perovskite structure.

Described are luminescent components with excellent performance and stability. The luminescent components comprise a first element including first luminescent crystals from the class of perovskite crystals, embedded a first polymer P1 and a second element comprising a second solid polymer composition, said second polymer composition optionally comprising second luminescent crystals embedded in a second polymer P2. Polymers P1 and P2 differ and are further specified in the claims. Also described are methods for manufacturing such components and devices comprising such components.

An -germanium crystals of lamellar morphology is provided, wherein the crystal has one or more nanosheets of germanium stacked on top of one another, as well as two methods of obtaining the crystals. The invention also provides the powder having the -germanium crystals of the invention, dispersions having the -germanium crystal of the invention or the powder of the invention, as well as the ink having the dispersions.

An -germanium crystals of lamellar morphology is provided, wherein the crystal has one or more nanosheets of germanium stacked on top of one another, as well as two methods of obtaining the crystals. The invention also provides the powder having the -germanium crystals of the invention, dispersions having the -germanium crystal of the invention or the powder of the invention, as well as the ink having the dispersions.

One aspect of the present invention is a positive active material (I) containing an oxide represented by the following formula (1). In the above formula (1), M is Co, Fe, Cu, Mn, Ni, Cr or a combination thereof. A is a group 13 element, a group 14 element, P, Sb, Bi, Te, or a combination thereof. x, y and z satisfy the following formulas (a) to (d):

[Li.sub.2-2zM.sub.2xA.sub.2y]O(1)

0<x<1(a)

0<y<1(b)

x+yz<1(c)

0.2<x/(x+y)(d)

A process can be used for the preparation of tris(trichlorosilyl)dichlorogallylgermane, which is a chlorinated, uncharged substance.