A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient:
R.sub.aT.sub.bX.sub.2-nY.sub.n(1)
wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.

Described are luminescent components with excellent performance and stability. The luminescent components comprise a first element 1 including first luminescent crystals 11 from the class of perovskite crystals, embedded a first polymer P1 and a second element 2 comprising a second solid polymer composition, said second polymer composition optionally comprising second luminescent crystals 12 embedded in a second polymer P2. Polymers P1 and P2 differ and are further specified in the claims. Also described are methods for manufacturing such components and devices comprising such components.

Described are luminescent components with excellent performance and stability. The luminescent components comprise a first element 1 including first luminescent crystals 11 from the class of perovskite crystals, embedded a first polymer P1 and a second element 2 comprising a second solid polymer composition, said second polymer composition optionally comprising second luminescent crystals 12 embedded in a second polymer P2. Polymers P1 and P2 differ and are further specified in the claims. Also described are methods for manufacturing such components and devices comprising such components.

A multi-atomic layered material and methods of making and using the same are described. The material can include a first 2D non-carbon mono-element atomic layer, a second 2D non-carbon mono-element atomic layer, and intercalants positioned between the first and second atomic layers.

A light-absorbing material includes a compound, wherein the compound has a perovskite crystal structure represented by the formula AMX.sub.3 where a Cs.sup.+ ion is located at an A-site, a Ge.sup.2+ ion is located at an M-site, and I.sup. ions are located at X-sites, and at least a part of the compound has an orthorhombic perovskite crystal structure. An X-ray diffraction pattern of the compound measured using Cu K radiation may have a first peak at a diffraction angle (2) of 25.4 or more and 25.8 or less and a second peak at a diffraction angle (2) of 24.9 or more and 25.3 or less, and an intensity of the first peak may be 30% or more of an intensity of the second peak.

A device includes a light adjustment apparatus having at least one material having a dielectric permittivity, the at least one material to affect the flow of light, wherein the light adjustment apparatus includes a tunable material to enable adjustment of the dielectric permittivity of the at least one material.

A device includes a light adjustment apparatus having at least one material having a dielectric permittivity, the at least one material to affect the flow of light, wherein the light adjustment apparatus includes a tunable material to enable adjustment of the dielectric permittivity of the at least one material.

The main object of the present invention is to provide a sulfide solid electrolyte material having favorable ion conductivity and high stability against moisture. The present invention solves the above-mentioned problem by providing a sulfide solid electrolyte material comprising an M1 element (such as Li element), an M2 element (such as Ge element, Sn element and P element) and a S element, and having a peak at a position of 2=29.580.50 in X-ray diffraction measurement using a CuK ray, characterized in that when a diffraction intensity at the above-mentioned peak of 2=29.580.50 is regarded as IA and a diffraction intensity at a peak of 2=27.330.50 is regarded as IB, a value of IB/IA is less than 0.50, and the M2 contains at least P and Sn.

To concentrate metals such as gallium from ore which is extracted from mines or used electronic components while suppressing the quantity of waste liquid generated is difficult. A first solid metal compound which contains a metal selected from a group consisting of gallium, indium, germanium, tellurium, and cesium at a first metal content in a mixture of the first solid metal compound is reduced to form a gaseous metal compound, the gaseous metal compound is oxidized to form a second solid metal compound, and the second solid metal compound is collected at a second metal content which is higher than the first metal content.

To concentrate metals such as gallium from ore which is extracted from mines or used electronic components while suppressing the quantity of waste liquid generated is difficult. A first solid metal compound which contains a metal selected from a group consisting of gallium, indium, germanium, tellurium, and cesium at a first metal content in a mixture of the first solid metal compound is reduced to form a gaseous metal compound, the gaseous metal compound is oxidized to form a second solid metal compound, and the second solid metal compound is collected at a second metal content which is higher than the first metal content.