The present invention relates to a method for producing a hexafluoromanganate(IV), said method being characterized by comprising: inserting an anode and a cathode into a reaction solution that contains a compound containing manganese having an atomic valence of less than 4 and/or manganese having an atomic valence of more than 4 and hydrogen fluoride; and then applying an electric current having an electric current density of 100 to 1000 A/m.sup.2 between the anode and the cathode. According to the present invention, it becomes possible to produce a hexafluoromanganate(IV) in which the content ratio of manganese having an atomic valence of 4 is high and the contamination with oxygen is reduced and which has high purity. When a complex fluoride red phosphor is produced using the hexafluoromanganate(IV) as a raw material, the phosphor produced has high luminescence properties, particularly high internal quantum efficiency.

Provided is an oxide phosphor having a light emission peak in a wavelength range from red light to near-infrared light. An oxide phosphor having a composition represented by Formula (1): (Li.sub.1?uM.sup.1.sub.u).sub.2M.sup.2.sub.vM.sup.3.sub.wO.sub.x:Cr.sub.y,M.sup.4.sub.z (1). wherein M.sup.1 is at least one element selected from the group consisting of Na, K, Rb and Cs; M.sup.2 is at least one element selected from the group consisting of Mg, Ca, Sr, Ba and Zn; M.sup.3 is at least one element selected from the group consisting of Si, Ge, Ti, Zr, Sn, and Hf; M.sup.4 is at least one element selected from the group consisting of Ni, Eu, Fe, Mn, Nd, Tm, Ho, Er, and Yb; and u, v, w, x, y, and z satisfy 0?u?1.0, 0.8?v?3.0, 1.8?w?6, 5.4?x?16, 0.005?y?1.0, and 0?z?0.5, respectively.

Described are luminescent components with excellent performance and stability. The luminescent components comprise a first element 1 including first luminescent crystals 11 from the class of perovskite crystals, embedded a first polymer P1 and a second element 2 comprising a second solid polymer composition, said second polymer composition optionally comprising second luminescent crystals 12 embedded in a second polymer P2. Polymers P1 and P2 differ and are further specified in the claims. Also described are methods for manufacturing such components and devices comprising such components.

Described are luminescent components with excellent performance and stability. The luminescent components comprise a first element 1 including first luminescent crystals 11 from the class of perovskite crystals, embedded a first polymer P1 and a second element 2 comprising a second solid polymer composition, said second polymer composition optionally comprising second luminescent crystals 12 embedded in a second polymer P2. Polymers P1 and P2 differ and are further specified in the claims. Also described are methods for manufacturing such components and devices comprising such components.

Provided is a method for producing a phosphor having a chemical composition represented by formula (I), A.sub.2MF.sub.6:Mn (I) (A is one type or more of an alkali metal selected from Li, Na, K, Rb, and Cs, and includes at least Na and/or K, and M is one type or more of a tetravalent element selected from Si, Ti, Zr, Hf, Ge, and Sn.), the method comprising preparing a first hydrofluoric acid solution containing M and a second hydrofluoric acid solution containing A as well as either dissolving a compound containing Mn in either the first hydrofluoric acid solution or the second hydrofluoric acid solution or preparing a separate solution in which the compound containing Mn is dissolved. When the solutions are mixed to precipitate the phosphor of the formula (I), the solutions are mixed so that the concentration of M is 0.1 to 0.5 mol/liter when all the solutions are mixed. According to the present invention, a complex fluoride phosphor having excellent luminescence properties can be produced stably with high yield.

A device including an LED light source optically coupled to a green-emitting U.sup.6+-doped phosphor having a composition selected from the group consisting of U.sup.6+-doped phosphate-vanadate phosphors, U.sup.6+-doped halide phosphors, U.sup.6+-doped oxyhalide phosphors, U.sup.6+-doped silicate-germanate phosphors, U.sup.6+-doped alkali earth oxide phosphors, and combinations thereof, is presented. The U.sup.6+-doped phosphate-vanadate phosphors are selected from the group consisting of compositions of formulas (A1)-(A12). The U.sup.6+-doped halide phosphors are selected from the group consisting of compositions for formulas (B1)-(B3). The U.sup.6+-doped oxyhalide phosphors are selected from the group consisting of compositions of formulas (C1)-(C5). The U.sup.6+-doped silicate-germanate phosphors are selected from the group consisting of compositions of formulas (D1)-(D11). The U.sup.6+-doped alkali earth oxide phosphors are selected from the group consisting of formulas (E1)-(E11).

The present invention relates to a method for controlling the density of an amorphous sulfide and, more specifically, to a method for producing an amorphous sulfide having high ionic conductivity of lithium ions by controlling the interplanar distance between a metal atom and a chalcogen atom through the adjustment of the reaction temperature and rate, in carrying out a sulfidation reaction by supplying a sulfur source in a gas phase onto the surface of a metal or an alloy.

The present invention relates to a method for controlling the density of an amorphous sulfide and, more specifically, to a method for producing an amorphous sulfide having high ionic conductivity of lithium ions by controlling the interplanar distance between a metal atom and a chalcogen atom through the adjustment of the reaction temperature and rate, in carrying out a sulfidation reaction by supplying a sulfur source in a gas phase onto the surface of a metal or an alloy.

The invention relates to a method for preparing a material made of silicon and/or germanium nanowires, comprising the steps of: i) placing a source of silicon and/or a source of germanium in contact with a catalyst comprising a binary metal sulfide or a multinary metal sulfide, said metal(s) being selected from among Sn, In, Bi, Sb, Ga, Ti, Cu, and Zn, by means of which silicon and/or germanium nanowires are obtained, ii) optionally recovering the silicon and/or germanium nanowires obtained in step (i); the catalyst and, optionally, the source of silicon and/or the source of germanium being heated before, during and/or after being placed in contact under temperature and pressure conditions that allow the growth of the silicon and/or germanium nanowires.

A device includes a light adjustment apparatus having a first material and a second material. The first material includes a first real dielectric permittivity and a positive imaginary dielectric permittivity. The second material includes a second real dielectric permittivity and a negative imaginary dielectric permittivity. The first and second materials affect the flow of light. The light adjustment apparatus includes a tunable material to enable adjustment of the dielectric permittivity of the respective materials.