A method of producing a kesterite material of CZTS, CZTSe or CZTSSe type, including the steps of: a) preparing an acidic solution by dissolving copper and zinc salts in water in desired molar ratio, b) preparing a basic solution by dissolving an alkali metal stannate together with an alkali metal carbonate or an alkali metal hydrogen carbonate or an alkali metal hydroxide or a combination thereof, and optionally with an alkali metal selenate or an alkali metal selenite or a mixture thereof, c) carrying out a precipitation reaction by mixing the acidic and the basic solution, d) drying the precipitate thereby providing a precursor for the kesterite material, and e) sulfurizing the precursor of step d to provide the kesterite material. Also, a precursor for a kesterite material of CZTS, CZTSe or CZTSSe type.

Described are luminescent components with excellent performance and stability. The luminescent components comprise a first element 1 including first luminescent crystals 11 from the class of perovskite crystals, embedded a first polymer P1 and a second element 2 comprising a second solid polymer composition, said second polymer composition optionally comprising second luminescent crystals 12 embedded in a second polymer P2. Polymers P1 and P2 differ and are further specified in the claims. Also described are methods for manufacturing such components and devices comprising such components.

The inventive concept relates to a complex for detecting gas responsive to gas to be tested. The complex for the detecting the gas contains a nanostructure made of an oxide semiconductor, and a Terbium (Tb) additive supported on the nanostructure.

What is provided is stannous oxide having an α-ray emission amount of 0.002 cph/cm.sup.2 or less after heating in an atmosphere at 100° C. for 6 hours. Tin containing lead as an impurity is dissolved in a sulfuric acid aqueous solution to prepare a tin sulfate aqueous solution, and lead sulfate is precipitated in the aqueous solution and removed. While stirring the tin sulfate aqueous solution from which lead sulfate has been removed, a lead nitrate aqueous solution containing lead having an α-ray emission amount of 10 cph/cm.sup.2 or less is added to cause lead sulfate to be precipitated in the tin sulfate aqueous solution, and simultaneously the tin sulfate aqueous solution is circulated while removing the lead sulfate from the aqueous solution. A neutralizing agent is added to the tin sulfate aqueous solution to collect stannous oxide.

Methods for treating water containing a target anion to remove the target anion can include preparing a treatment composition solution that contains a metal treatment agent, adjusting the treatment composition solution to a first pH that is alkaline and then to a second pH that is acidic, and contacting the treatment composition solution with the water that contains the target anion.

Methods are disclosed for treating water containing a target anion to remove the target anion. The methods can include preparing a treatment composition solution that contains a metal treatment agent, adjusting the treatment composition solution to a first pH that is alkaline and then to a second pH that is acidic, and contacting the treatment composition solution with the water that contains the target anion.

A process for efficiently and economically recovering palladium from a colloidal suspension of tin and palladium involves the use of centrifugation to obtain a sediment enriched in tin and a centrifugate enriched in palladium. An aggregating agent is employed to enhance separation during centrifugation, and ion exchange may be employed to recover palladium from the centrifugate.

A process for efficiently and economically recovering palladium from a colloidal suspension of tin and palladium involves the use of centrifugation to obtain a sediment enriched in tin and a centrifugate enriched in palladium. An aggregating agent is employed to enhance separation during centrifugation, and ion exchange may be employed to recover palladium from the centrifugate.

Disclosed herein is a doped perovskite barium stannate material, which has a chemical general formula of BaA.sub.xB.sub.xSn.sub.1-2xO.sub.3, where A is at least one of In, Y, Bi and La; B is at least one of Nb and Ta, and 0<x≤0.025. The doped perovskite barium stannate material disclosed in the invention has a high dielectric constant, low dielectric loss and good temperature-stability, and it can be used not only as low-frequency ceramic capacitor dielectrics, but also as microwave dielectric ceramics because of its excellent microwave dielectric properties, implying the potential application in the field of microwave communication. What's more, disclosed is a method to prepare the doped perovskite barium stannate material and the application of the doped perovskite barium stannate material in a low-frequency ceramic capacitor or microwave communication dielectric ceramics.

An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.