C01G19/00

BaSnO.SUB.3 .thin flim and low-temperature preparation method therefor

The present invention relates to a method for preparing a BaSnO.sub.3 thin film, comprising the steps of: a) precipitating an amorphous precipitate by adding an alkaline aqueous solution to a mixture solution comprising a barium salt, a tin salt, hydrogen peroxide, and an organic acid; b) preparing a crystalline BaSnO.sub.3 precursor material by preheating the mixture solution containing the amorphous precipitate; c) preparing a dispersion solution by dispersing the crystalline BaSnO.sub.3 precursor material in a polar organic solvent; d) coating the dispersion solution on a substrate; and e) preparing a BaSnO.sub.3 thin film of a perovskite structure by heat treating the dispersion solution coated on the substrate.

BaSnO.SUB.3 .thin flim and low-temperature preparation method therefor

The present invention relates to a method for preparing a BaSnO.sub.3 thin film, comprising the steps of: a) precipitating an amorphous precipitate by adding an alkaline aqueous solution to a mixture solution comprising a barium salt, a tin salt, hydrogen peroxide, and an organic acid; b) preparing a crystalline BaSnO.sub.3 precursor material by preheating the mixture solution containing the amorphous precipitate; c) preparing a dispersion solution by dispersing the crystalline BaSnO.sub.3 precursor material in a polar organic solvent; d) coating the dispersion solution on a substrate; and e) preparing a BaSnO.sub.3 thin film of a perovskite structure by heat treating the dispersion solution coated on the substrate.

Multi-atomic layered materials

A multi-atomic layered material and methods of making and using the same are described. The material can include a first 2D non-carbon mono-element atomic layer, a second 2D non-carbon mono-element atomic layer, and intercalants positioned between the first and second atomic layers.

METHOD FOR PRODUCING METAL OXIDE DISPERSION LIQUID AND METHOD FOR PRODUCING INFRARED-RADIATION-SHIELDING FILM
20210179440 · 2021-06-17 ·

According to this method, a fatty acid of CnH.sub.2nO.sub.2 (n=5 to 14) is mixed with a plurality of metal sources selected from Zn, In, Sn, Sb, and Al, thereby fatty acid metal salts are obtained, subsequently the fatty acid metal salts are heated at 130° C. to 250° C., and a metal soap that is a precursor is obtained. This precursor is heated at 200° C. to 350° C., and metal oxide primary particles are dispersed in the precursor melt. To this dispersion liquid, a washing solvent having a δP value higher by 5 to 12 than the δP value of the Hansen solubility parameter of the final dispersing solvent is added, thereby the metal oxide primary particles are washed and agglomerated, metal oxide secondary particles are obtained, and then washing is repeated.

METAL OXIDE MICROPARTICLES, METHOD FOR PRODUCING SAME, DISPERSION FOR FORMING INFRARED-SHIELDING FILM, METHOD FOR PRODUCING SAME, METHOD FOR PRODUCING SAME, METHOD FOR FORMING INFRARED-SHIELDING FILM, AND BASE MATERIAL HAVING INFRARED-SHIELDING FILM
20210191016 · 2021-06-24 ·

In these metal oxide microparticles, surfaces of microparticles of a metal oxide are modified by a fatty acid having 5 or more and 14 or less carbon atoms and having a branched chain, the metal oxide is metal oxides of a plurality of kinds of metals selected from the group consisting of Zn, In, Sn, and Sb, and an average particle diameter of the microparticles is 80 nm or less. In a dispersion for forming an infrared-shielding film, the metal oxide microparticles are dispersed in a hydrophobic solvent, and a light transmittance in a wavelength range of 800 nm to 1,100 nm is 20% or more and less than 70%.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
20210175073 · 2021-06-10 ·

A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1:


M2L.sub.1).sub.n  [Chemical Formula 1]

In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each L.sub.1 may independently be hydrogen, a halogen, or a group represented by Chemical Formula 2.

##STR00001##

In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R.sub.1, R.sub.2, R.sub.3, and R.sub.4 may each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
20210175073 · 2021-06-10 ·

A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1:


M2L.sub.1).sub.n  [Chemical Formula 1]

In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each L.sub.1 may independently be hydrogen, a halogen, or a group represented by Chemical Formula 2.

##STR00001##

In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R.sub.1, R.sub.2, R.sub.3, and R.sub.4 may each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.

ARTICLES WITH PATTERNED COATINGS
20210139370 · 2021-05-13 ·

Embodiments of a article including include a substrate and a patterned coating are provided. In one or more embodiments, when a strain is applied to the article, the article exhibits a failure strain of 0.5% or greater. Patterned coating may include a particulate coating or may include a discontinuous coating. The patterned coating of some embodiments may cover about 20% to about 75% of the surface area of the substrate. Methods for forming such articles are also provided.

Security ink pigment, security ink, printed matter, and method of producing security ink pigment
11015070 · 2021-05-25 · ·

Security of a printed matter is enhanced, and a visual image is made clear if a latent image formed by a coating printed on a matter to be printed for a security enhancement of the printed matter becomes the visual image. A security ink pigment contains a powder. A main constituent of the powder is a perovskite-type oxide. The perovskite-type oxide has a composition expressed as a general formula of ABO.sub.3. A is mainly made of Ba. B is mainly made of Sn. The powder emits an infrared fluorescence when being irradiated with an ultraviolet excitation light. The perovskite-type oxide has a crystal lattice constant having a difference equal to or smaller than 0.002 angstrom from a theoretical crystal lattice constant of the perovskite-type oxide having a composition expressed as a composition formula of BaSnO.sub.3.

Security ink pigment, security ink, printed matter, and method of producing security ink pigment
11015070 · 2021-05-25 · ·

Security of a printed matter is enhanced, and a visual image is made clear if a latent image formed by a coating printed on a matter to be printed for a security enhancement of the printed matter becomes the visual image. A security ink pigment contains a powder. A main constituent of the powder is a perovskite-type oxide. The perovskite-type oxide has a composition expressed as a general formula of ABO.sub.3. A is mainly made of Ba. B is mainly made of Sn. The powder emits an infrared fluorescence when being irradiated with an ultraviolet excitation light. The perovskite-type oxide has a crystal lattice constant having a difference equal to or smaller than 0.002 angstrom from a theoretical crystal lattice constant of the perovskite-type oxide having a composition expressed as a composition formula of BaSnO.sub.3.