An oxide superconducting wire includes a superconducting layer deposited on a substrate. The superconducting layer includes an oxide superconductor RE-Ba—Cu—O and artificial pinning centers ABO.sub.3, where RE is a rare earth element, A is Ba, Sr or Ca, and B is Hf, Zr, or Sn. In a TEM image of a cross-section of the superconducting layer, a standard deviation σ of an inclination angle of the artificial pinning center rods with respect to a cross-sectional direction of the superconducting layer is 6.13° to 11.73° and an average length of the artificial pinning center rods is 19.84 to 25.44 nm.

An oxide superconducting wire includes a superconducting layer deposited on a substrate. The superconducting layer includes an oxide superconductor RE-Ba—Cu—O and artificial pinning centers ABO.sub.3, where RE is a rare earth element, A is Ba, Sr or Ca, and B is Hf, Zr, or Sn. In a TEM image of a cross-section of the superconducting layer, a standard deviation σ of an inclination angle of the artificial pinning center rods with respect to a cross-sectional direction of the superconducting layer is 6.13° to 11.73° and an average length of the artificial pinning center rods is 19.84 to 25.44 nm.

A solid electrolyte including: an oxide represented by Formula 1

Li.sub.yM.sub.zHfO.sub.3-x  Formula 1

wherein, in Formula 1, M is a divalent element, a trivalent element, or a combination thereof, and 0≤x<3, 0<y<1, and 0<z<1.

A solid electrolyte including: an oxide represented by Formula 1, Formula 2, Formula 3, or a combination thereof,

Li.sub.2+4xM1.sub.1−xO.sub.3  Formula 1

wherein, in Formula 1, M1 is hafnium, titanium, zirconium, or a combination thereof, and 0<x<1;

Li.sub.2−y(a−4)M1.sub.1−yM2.sup.a.sub.yO.sub.3  Formula 2

wherein, in Formula 2, M1 is hafnium, titanium, zirconium, or a combination thereof, M2 is at least one element having an oxidation number of a, and wherein a is an integer from 1 to 6, and 0<y<1; or

Li.sub.2−zM1O.sub.3−zX.sub.z  Formula 3

wherein, in Formula 3, M1 is hafnium, titanium, zirconium, or a combination thereof, X is a halogen, a pseudohalogen, or a combination thereof, and 0<z<2.

An ion conductor including: at least one oxide represented by Formulae 1 to 3

Li.sub.4±xM.sub.1−x′M′.sub.x′O.sub.4   Formula 1

wherein in Formula 1, 0≤x≤1 and 0≤x′≤1 , M is a Group 4 element,

M′ is an element of Group 2, an element of Group 3, an element of Group 5, an element of Group 12, an element of Group 13, a vacancy, or a combination thereof, with the proviso that when M is Zr, then x≠0, x′≠0 and M′ is Be, Ca, Sr, Ba, Ra, Cd, Hg, Cn, Ga, In, TI, an element of Group 3, an element of Group 5, or a combination thereof;

Li.sub.4−yM″O.sub.4−yA′.sub.y   Formula 2

wherein in Formula 2, M″ is a Group 4 element, A′ includes at least one halogen, with the proviso that when M″ is Zr, y≠0,

Li.sub.4+4zM′″.sub.1−zO.sub.4   Formula 3

wherein in Formula 3, 0<z<1, and M″′ is a Group 4 element.

A solid electrolyte includes an ion conductor represented by at least one of Formulae 1 to 3,

Li.sub.1+3xM1.sub.1-xO.sub.2   Formula 1

wherein, in Formula 1, M1 is a trivalent element, and 0<x<1,

L.sub.1-yM2O.sub.2-yX.sub.y   Formula 2

wherein, in Formula 2, M2 is a trivalent element, X is at least one of a halogen atom or a pseudohalogen, and 0<y<1,

Li.sub.1-z(a-3)M3.sub.1-zD.sub.zO.sub.2   Formula 3

wherein, in Formula 3, M3 is a trivalent element, D is at least one of a monovalent element to a hexavalent element, and 0<z<1.

An electronic device comprises a first blocking electrode; a second blocking electrode; and a dielectric material disposed between the first electrode and the second electrode, the dielectric material comprising a compound of Formula 1
Li.sub.24-b*y-c*z-a*xM.sup.1.sub.yM.sup.2.sub.zM.sup.3.sub.xO.sub.12-δ  (1)
wherein M.sup.1 is a cationic element having an oxidation state of b, wherein b is +1, +2, +3, +4, +5, +6, or a combination thereof; M.sup.2 is a cationic element having an oxidation state of c, wherein c is +1, +2, +3, +4, +5, +6, or a combination thereof; M.sup.3 is a cationic element having an oxidation state of a, wherein a is +1, +3, +4, or a combination thereof; 0≤y≤3; 0≤z≤3; 0≤x≤5; and 0≤δ≤2. Methods for the manufacture of the electronic device are also disclosed.

The invention relates to a method for preparing a sol-gel solution which can be used to prepare a barium titanate ceramic doped with hafnium and/or with at least one lanthanide element, comprising the following steps: a) a step to place a first mixture comprising a barium carboxylate and a diol solvent in contact with a second mixture comprising a titanium alkoxide and a hafnium alkoxide and/or an alkoxide of a lanthanide element in a monoalcohol solvent; b) a step to distil the mixture resulting from step a) to remove at least part of the monoalcohol solvent; c) a step to add acetic acid, under heat, to the distilled mixture of step b).

Provided is a solid electrolyte material represented by the following composition formula (1)

Li.sub.33aY.sub.1+aM.sub.aCl.sub.6xyBr.sub.xI.sub.yFormula (1) where M is one or more kinds of elements selected from the group consisting of Zr, Hf, and Ti; 1<<2; 0<a<1.5; 0<(33a); 0<(1+a); 0x6; 0y6; and (x+y)6.

A compound of Formula 1:
Li.sub.6+(4a)x+c)M.sup.4+.sub.(2x)A.sup.a+.sub.xO.sub.(7c)N.sub.c(1)
wherein M is a tetravalent cationic element, A is a divalent or trivalent cationic element, N is an anion having a valence of less than 2, wherein when A is Y.sup.3+, In.sup.3+, Zn.sup.2+, or a combination thereof, 0.15<x0.5, otherwise 0x0.5, 0c2, and ((4a)x+c)>0.