A nanocrystal comprising a semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal including a core comprising a first semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal comprising a nanocrystal core and a shell comprising a semiconductor material disposed on at least a portion of the nanocrystal core, wherein the semiconductor material comprises at least three chemical elements and is obtainable by a process comprising adding a precursor for at least one of the chemical elements of the semiconductor material from a separate source to a nanocrystal core while simultaneously adding amounts of precursors for the other chemical elements of the semiconductor material. A population of nanocrystals, method for preparing nanocrystals, compositions, and devices including nanocrystals are also disclosed.

A nanocrystal comprising a semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal including a core comprising a first semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal comprising a nanocrystal core and a shell comprising a semiconductor material disposed on at least a portion of the nanocrystal core, wherein the semiconductor material comprises at least three chemical elements and is obtainable by a process comprising adding a precursor for at least one of the chemical elements of the semiconductor material from a separate source to a nanocrystal core while simultaneously adding amounts of precursors for the other chemical elements of the semiconductor material. A population of nanocrystals, method for preparing nanocrystals, compositions, and devices including nanocrystals are also disclosed.

To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous.

To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous.

Porous oxide semiconductor particles have a connected structure in which porous primary particles having an aggregate of crystallites composed of an oxide semiconductor are connected to each other and have a specific surface area of 60 m.sup.2/g or more. The porous oxide semiconductor particles have preferably a pore diameter of 1 nm or more and 20 nm or less. The porous oxide semiconductor particles have preferably a tap density of 0.005 g/cm.sup.3 or more and 1.0 g/cm.sup.3 or less. The oxide semiconductor is preferably SnO.sub.2 or SnO.sub.2 doped with at least one element selected from the group consisting of Nb, Sb, W, Ta, and Al.

Porous oxide semiconductor particles have a connected structure in which porous primary particles having an aggregate of crystallites composed of an oxide semiconductor are connected to each other and have a specific surface area of 60 m.sup.2/g or more. The porous oxide semiconductor particles have preferably a pore diameter of 1 nm or more and 20 nm or less. The porous oxide semiconductor particles have preferably a tap density of 0.005 g/cm.sup.3 or more and 1.0 g/cm.sup.3 or less. The oxide semiconductor is preferably SnO.sub.2 or SnO.sub.2 doped with at least one element selected from the group consisting of Nb, Sb, W, Ta, and Al.

The present disclosure is directed to methods of making Pb-free perovskites for short-wave IR (SWIR) devices and to various Pb-free perovskite materials disclosed herein. The perovskites disclosed herein have improved chemical stability and long-term stability, while the production methods disclosed herein have improved safety and lower cost.

Provided are an iodine-containing metal compound, a composition for depositing a metal-containing thin film including the same, and a method of manufacturing a metal-containing thin film using the same. Since the composition for depositing a thin film according to one embodiment is present in a liquid state at room temperature, it has excellent storage and handling properties, and since the composition has high reactivity, a metal thin film may be efficiently formed using the composition.

A solid electrolyte for solid-state batteries comprises a phosphorous-free solid electrolyte having a cubic argyrodite structure. The solid electrolyte has a composition according to the molecular formula: Li.sub.6+xM.sub.xSb.sub.1yS.sub.5zR, where x=0 to 0.7; y=0 to 0.7 and z=0 to 0.7, wherein the (semi-) metal comprises M=Si, Sn, W and the halogen comprises R=I.sub.1, Cl.sub.1, Br.sub.z, Br.sub.1 and further wherein, in a case where R=I.sub.1, M=W and x>0. Furthermore, a production method is described.

In an aspect, a ferrite composition can comprise a SbCoM-type ferrite having the formula: Me.sub.1-xSb.sub.xCo.sub.y+xM.sub.yFe.sub.12-x-2yO.sub.19, wherein Me is at least one of Sr, Pb, or Ba; M is at least one of Ti, Zr, Ru, or Ir; x is 0.001 to 0.3; and y is 0.8 to 1.3. In another aspect, a method of making the ferrite composition comprises mixing ferrite precursor compounds comprising Me, Fe, Sb, Co, and M; and sintering the ferrite precursor compounds in an oxygen atmosphere to form the SbCoM-type ferrite. In yet another aspect, a composite comprises the ferrite composition and a polymer. In still another aspect, an article comprises the ferrite composition.