The present invention provides a PZN-based large-size ternary high-performance single crystal, a growing method and a molten salt furnace. The PZN-based large-size ternary high-performance single crystal is represented by formula (1-x-y)Pb(B′.sub.1/2B″.sub.1/2)O.sub.3-yPb(Zn.sub.1/3Nb.sub.2/3)O.sub.3-xPbTiO.sub.3, wherein B′ is Mg, Fe, Sc, Ni, In, Yb, Lu and/or Ho, B″ is Nb, Ta and/or W, 0.4<x<0.6, 0.1<y<0.4, 0.1<1-x-y<0.4. The present invention adjusts the convective change of the melt through the rotation of the top seed and the bottom crucible, overcoming the problems of serious crystal inclusions and poor crystal quality during the growth process, and can adapt the change of the crystal diameter to the thermal inertia of the heat preservation system, thus effectively reducing crystal inclusions and improving the yield of the crystal.

A solid electrolyte material of the present disclosure includes: Li; M; Al; O; and X, wherein the M is at least one selected from the group consisting of Ta and Nb, and the X is at least one selected from the group consisting of F, Cl, and Br.

Nanostructured materials based on niobium oligomers, organic cations, quaternary ammonium salts and copper cations (Cu.sup.2+) with high foliar antifungal activity, which can also be used as biomarkers.

A titanium-niobium oxide achieves suppressed adulteration with TiO.sub.2 and Ti.sub.2Nb.sub.10O.sub.29 and suppressed growth of crystal grains, and an electrode and a lithium-ion secondary cell include such a titanium-niobium oxide. The titanium-niobium oxide contains less than 0.30 at % of an alkali metal element and at least one element selected from the group consisting of Al, Y, La, Ce, Pr, and Sm. A ratio of thea total atomic weight of Al, Y, La, Ce, Pr, and Sm to thea total atomic weight of Ti and Nb is equal to or more than 0.001.

A titanium-niobium oxide achieves suppressed adulteration with TiO.sub.2 and Ti.sub.2Nb.sub.10O.sub.29 and suppressed growth of crystal grains, and an electrode and a lithium-ion secondary cell include such a titanium-niobium oxide. The titanium-niobium oxide contains less than 0.30 at % of an alkali metal element and at least one element selected from the group consisting of Al, Y, La, Ce, Pr, and Sm. A ratio of thea total atomic weight of Al, Y, La, Ce, Pr, and Sm to thea total atomic weight of Ti and Nb is equal to or more than 0.001.

A method for producing conductive materials from Nb-doped TiO2-particles, in which Nb-doped TiO2-particles are pressed to form bodies and the bodies are treated in an oxygen-containing atmosphere and at a reducing atmosphere.

A method for producing conductive materials from Nb-doped TiO2-particles, in which Nb-doped TiO2-particles are pressed to form bodies and the bodies are treated in an oxygen-containing atmosphere and at a reducing atmosphere.

A production method of a titanium-niobium composite oxide uses, as a source material, niobium oxide including a mixture of a plurality of crystal forms including a first Nb2O5 structure and at least either of a second Nb2O5 structure and a third Nb2O5 structure. The first Nb2O5 structure has a first peak with 2θ from 23.6° to 23.8°, a peak with 2θ from 24.8° to 25.0°, and a peak with 2θ from 25.4° to 25.6°. The second Nb2O5 structure has a peak with 2θ from 23.7° to 23.9°, a peak with 2θ from 24.3° to 24.5°, and a peak with 2θ from 25.4° to 25.6°. The third Nb2O5 structure has a peak with 2θ from 22.5° to 22.7°, a peak with 2θ from 28.3° to 28.5°, and a peak with 2θ from 28.8° to 29.0°.

A production method of a titanium-niobium composite oxide uses, as a source material, niobium oxide including a mixture of a plurality of crystal forms including a first Nb2O5 structure and at least either of a second Nb2O5 structure and a third Nb2O5 structure. The first Nb2O5 structure has a first peak with 2θ from 23.6° to 23.8°, a peak with 2θ from 24.8° to 25.0°, and a peak with 2θ from 25.4° to 25.6°. The second Nb2O5 structure has a peak with 2θ from 23.7° to 23.9°, a peak with 2θ from 24.3° to 24.5°, and a peak with 2θ from 25.4° to 25.6°. The third Nb2O5 structure has a peak with 2θ from 22.5° to 22.7°, a peak with 2θ from 28.3° to 28.5°, and a peak with 2θ from 28.8° to 29.0°.

Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbO.sub.3 ternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbO.sub.3 ternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about -15% to about 15% in a range of about -55° C. to about +200° C.