A method for the formation of tantalum carbides on a graphite substrate includes the steps of: (a) adding an organic tantalum compound, a chelating agent, a pre-polymer to an organic solvent to form a tantalum polymeric solution; (b) subjecting a graphite substrate with the tantalum polymeric solution to a curing process to form a polymeric tantalum film on the graphite substrate; and (c) subjecting the polymeric tantalum film on the graphite substrate in an oven to a pyrolytic reaction in the presence of a protective gas to obtain a protective tantalum carbide on the graphite substrate.

A method for the formation of tantalum carbides on a graphite substrate includes the steps of: (a) adding an organic tantalum compound, a chelating agent, a pre-polymer to an organic solvent to form a tantalum polymeric solution; (b) subjecting a graphite substrate with the tantalum polymeric solution to a curing process to form a polymeric tantalum film on the graphite substrate; and (c) subjecting the polymeric tantalum film on the graphite substrate in an oven to a pyrolytic reaction in the presence of a protective gas to obtain a protective tantalum carbide on the graphite substrate.

An optical lens with an antireflective film includes: a lens substrate; and an antireflective film disposed on the lens substrate. The antireflective film is formed of layers each having a physical thickness of 140 nm or less. In order from an air side, the antireflective film has: a first layer formed as an MgF.sub.2 layer, a second layer, a fourth layer, a sixth layer, an eighth layer, and a tenth layer each having a refractive index of 2.0 or more and 2.3 or less, and a third layer, a fifth layer, a seventh layer, and a ninth layer each formed as an SiO.sub.2 layer.

An optical lens with an antireflective film includes: a lens substrate; and an antireflective film disposed on the lens substrate. The antireflective film is formed of layers each having a physical thickness of 140 nm or less. In order from an air side, the antireflective film has: a first layer formed as an MgF.sub.2 layer, a second layer, a fourth layer, a sixth layer, an eighth layer, and a tenth layer each having a refractive index of 2.0 or more and 2.3 or less, and a third layer, a fifth layer, a seventh layer, and a ninth layer each formed as an SiO.sub.2 layer.

A selective emitter exhibiting heat resistance up to 1000° C., comprising a metal body, a first dielectric layer provided on one surface of the metal body, a composite layer provided on another surface of the first dielectric layer at an opposite side to the metal body side, and a second dielectric layer provided on another surface of the composite layer at an opposite side to the first dielectric layer, the composite layer being a layer provided with a metal or semiconductor dispersed in an oxide of the metal or the semiconductor.

A selective emitter exhibiting heat resistance up to 1000° C., comprising a metal body, a first dielectric layer provided on one surface of the metal body, a composite layer provided on another surface of the first dielectric layer at an opposite side to the metal body side, and a second dielectric layer provided on another surface of the composite layer at an opposite side to the first dielectric layer, the composite layer being a layer provided with a metal or semiconductor dispersed in an oxide of the metal or the semiconductor.

An electronic device comprises a first blocking electrode; a second blocking electrode; and a dielectric material disposed between the first electrode and the second electrode, the dielectric material comprising a compound of Formula 1
Li.sub.24-b*y-c*z-a*xM.sup.1.sub.yM.sup.2.sub.zM.sup.3.sub.xO.sub.12-δ  (1)
wherein M.sup.1 is a cationic element having an oxidation state of b, wherein b is +1, +2, +3, +4, +5, +6, or a combination thereof; M.sup.2 is a cationic element having an oxidation state of c, wherein c is +1, +2, +3, +4, +5, +6, or a combination thereof; M.sup.3 is a cationic element having an oxidation state of a, wherein a is +1, +3, +4, or a combination thereof; 0≤y≤3; 0≤z≤3; 0≤x≤5; and 0≤δ≤2. Methods for the manufacture of the electronic device are also disclosed.

Provided is a continuous reactor system for producing graphene or an inorganic 2-D compound, the reactor comprising: (a) a rust body comprising an outer wall and a second body comprising an inner wall, wherein the inner wall defines a bore and the first body is configured within the bore and a motor is configured to rotate the first and/or second body; (b) a reaction chamber between the outer wall of the first body and the inner wall of the second body; (c) a first inlet and a second inlet disposed at first end of the reactor and in fluid communication with the reaction chamber; (d) a first outlet and a second outlet disposed downstream from the first inlet, the outlets being in fluid communication with the reaction chamber; and (e) a flow return conduit having two inlets/outlets in fluid communication with two ends of the reactor.

Provided are a dielectric including an oxide represented by Formula 1 below and having a cubic crystal structure, a capacitor including the dielectric, a semiconductor device including the dielectric, and a method of manufacturing the dielectric.

(Rb.sub.xA.sub.1-x)(B.sub.yTa.sub.1-y)O.sub.3-<Formula 1>

In Formula 1 above, A is K, Na, Li, Cs, or a combination thereof, B is Nb, V, or a combination thereof, and 0.1x0.2, 0y0.2, and 00.5 are satisfied.

Provided are a dielectric including an oxide represented by Formula 1 below and having a cubic crystal structure, a capacitor including the dielectric, a semiconductor device including the dielectric, and a method of manufacturing the dielectric.

(Rb.sub.xA.sub.1-x)(B.sub.yTa.sub.1-y)O.sub.3-<Formula 1>

In Formula 1 above, A is K, Na, Li, Cs, or a combination thereof, B is Nb, V, or a combination thereof, and 0.1x0.2, 0y0.2, and 00.5 are satisfied.