An electronic device comprises a first blocking electrode; a second blocking electrode; and a dielectric material disposed between the first electrode and the second electrode, the dielectric material comprising a compound of Formula 1
Li.sub.24-b*y-c*z-a*xM.sup.1.sub.yM.sup.2.sub.zM.sup.3.sub.xO.sub.12-δ  (1)
wherein M.sup.1 is a cationic element having an oxidation state of b, wherein b is +1, +2, +3, +4, +5, +6, or a combination thereof; M.sup.2 is a cationic element having an oxidation state of c, wherein c is +1, +2, +3, +4, +5, +6, or a combination thereof; M.sup.3 is a cationic element having an oxidation state of a, wherein a is +1, +3, +4, or a combination thereof; 0≤y≤3; 0≤z≤3; 0≤x≤5; and 0≤δ≤2. Methods for the manufacture of the electronic device are also disclosed.

Provided is a continuous reactor system for producing graphene or an inorganic 2-D compound, the reactor comprising: (a) a rust body comprising an outer wall and a second body comprising an inner wall, wherein the inner wall defines a bore and the first body is configured within the bore and a motor is configured to rotate the first and/or second body; (b) a reaction chamber between the outer wall of the first body and the inner wall of the second body; (c) a first inlet and a second inlet disposed at first end of the reactor and in fluid communication with the reaction chamber; (d) a first outlet and a second outlet disposed downstream from the first inlet, the outlets being in fluid communication with the reaction chamber; and (e) a flow return conduit having two inlets/outlets in fluid communication with two ends of the reactor.

An anti-counterfeit ink composition, an anti-counterfeit ink, and an anti-counterfeit printed matter that transmits a visible light region, having absorption in an infrared region, and capable of judging authenticity of the printed matter, and there is provided an anti-counterfeit ink composition, an anti-counterfeit ink, an anti-counterfeit printed matter, and a method for producing the anti-counterfeit ink composition, wherein a value of an XRD peak top intensity ratio of the composite tungsten oxide ultrafine particles is 0.13 or more when a value of the XRD peak intensity is set to 1, with plane of a silicon powder standard sample (640c produced by NIST) as a reference.

An anti-counterfeit ink composition, an anti-counterfeit ink, and an anti-counterfeit printed matter that transmits a visible light region, having absorption in an infrared region, and capable of judging authenticity of the printed matter, and there is provided an anti-counterfeit ink composition, an anti-counterfeit ink, an anti-counterfeit printed matter, and a method for producing the anti-counterfeit ink composition, wherein a value of an XRD peak top intensity ratio of the composite tungsten oxide ultrafine particles is 0.13 or more when a value of the XRD peak intensity is set to 1, with plane of a silicon powder standard sample (640c produced by NIST) as a reference.

Porous oxide semiconductor particles have a connected structure in which porous primary particles having an aggregate of crystallites composed of an oxide semiconductor are connected to each other and have a specific surface area of 60 m.sup.2/g or more. The porous oxide semiconductor particles have preferably a pore diameter of 1 nm or more and 20 nm or less. The porous oxide semiconductor particles have preferably a tap density of 0.005 g/cm.sup.3 or more and 1.0 g/cm.sup.3 or less. The oxide semiconductor is preferably SnO.sub.2 or SnO.sub.2 doped with at least one element selected from the group consisting of Nb, Sb, W, Ta, and Al.

Methods of synthesizing transition metal dichalcogenide nanoparticles include forming a metal-amine complex, combining the metal-amine complex with a chalcogen source in at least one solvent to form a solution, heating the solution to a first temperature for a first period of time, and heating the solution to a second temperature that is higher than the first temperature for a second period of time.

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

A positive electrode active material for lithium secondary batteries, includes: a lithium composite metal compound containing secondary particles formed by aggregation of primary particles; and a lithium-containing tungsten oxide, in which the lithium-containing tungsten oxide is present at least in interparticle spaces of the primary particles, and in a pore distribution of the positive electrode active material for lithium secondary batteries measured by a mercury intrusion method, a surface area of pores having a pore diameter in a range of 10 nm or more to 200 nm or less is 0.4 m.sup.2/g or more and 3.0 m.sup.2/g or less.

Surface-treated infrared-absorbing fine particles with excellent moisture and heat resistance and excellent infrared-absorbing properties, surface-treated infrared absorbing fine particle powder containing the surface-treated infrared absorbing fine particles, an infrared absorbing fine particle dispersion liquid and an infrared absorbing fine particle dispersion body using the surface-treated infrared absorbing fine particles, and a method for producing them, wherein a surface of infrared absorbing particles is coated with a coating layer containing at least one selected from hydrolysis product of a metal chelate compound, polymer of hydrolysis product of a metal chelate compound, hydrolysis product of a metal cyclic oligomer compound, and polymer of hydrolysis product of a metal cyclic oligomer compound.