A production method of tungsten hexafluoride according to one embodiment of the present invention includes: a first step of bringing tungsten having an oxide film into contact with a fluorine gas or inert gas containing 50 vol ppm to 50 vol % of hydrogen fluoride in a reactor, thereby removing the oxide film from the tungsten; and a second step of bringing the tungsten from which the oxide film has been removed by the first step into contact with a fluorine-containing gas to form tungsten hexafluoride.

The present invention relates to a lithium composite oxide, a positive electrode active material for a lithium secondary battery including the lithium composite oxide, and a lithium secondary battery using a positive electrode including the positive electrode active material.

A printable ammonium-based chalcogenometalate fluid may include an ammonium-based chalcogenometalate precursor; an aqueous solvent; water; and a dopant; wherein, in the presence of heat, the printable ammonium-based chalcogenometalate fluid dissipates to form a transition metal dichalcogenide having the form MX2 with the dopant distributed therethrough.

The present disclosure is directed to variable composition ceramics. Zr.sub.(2−x)Hf.sub.(x)WP.sub.2O.sub.12 and Hf.sub.2WP.sub.2O.sub.12 exhibit large negative thermal expansion that is linear over a large temperature range up to at least 900° C., These new ceramic material particles may be mixed with polymers to make a composite suitable for use in backsheets for photovoltaic modules or in other applications. The thermal expansion coefficient of the composite can be tailored to match that of the solar cell in order to reduce stress resulting from daily thermal cycling.

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

A complex oxide ceramic according to an embodiment is a complex oxide ceramic including a rare earth element and at least one element selected from among molybdenum, tungsten, and vanadium. An example of the rare earth element is at least one species selected from among La, Ce, and Gd.

A complex oxide ceramic according to an embodiment is a complex oxide ceramic including a rare earth element and at least one element selected from among molybdenum, tungsten, and vanadium. An example of the rare earth element is at least one species selected from among La, Ce, and Gd.

Described are methods for forming a multilayer conductive structure for semiconductor devices. A seed layer is formed comprising a metal and an additional constituent that in combination with the metal inhibits nucleation of a fill layer of the metal formed over the seed layer. Tungsten may be doped or alloyed with silicon to form the seed layer, with a tungsten fill being formed over the seed layer.

Described are methods for forming a multilayer conductive structure for semiconductor devices. A seed layer is formed comprising a metal and an additional constituent that in combination with the metal inhibits nucleation of a fill layer of the metal formed over the seed layer. Tungsten may be doped or alloyed with silicon to form the seed layer, with a tungsten fill being formed over the seed layer.