C01G55/00

PEROVSKITE MATERIAL, METHOD OF PREPARING THE SAME, AND SECONDARY BATTERY INCLUDING THE PEROVSKITE MATERIAL
20200119346 · 2020-04-16 ·

A perovskite material represented by Formula 1:


Li.sub.xA.sub.yM.sub.zO.sub.3-Formula 1 wherein in Formula 1, 0<x1, 0<y1, 0<x+y<1, 0<z1.5, 01, A is H, Na, K, Rb, Cs, Ca, Sr, Ba, Y, La, Ce, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, or a combination thereof, and M is Ni, Pd, Pb, Fe, Ir, Co, Rh, Mn, Cr, Ru, Re, Sn, V, Ge, W, Zr, Mo, Hf, U, Nb, Th, Ta, Bi, Li, H, Na, K, Rb, Cs, Ca, Sr, Ba, Y, La, Ce, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Mg, Al, Si, Sc, Zn, Ga, Ag, Cd, In, Sb, Pt, Au, or a combination thereof.

MIXED CONDUCTOR, ELECTROCHEMICAL DEVICE,AND METHOD OF PREPARING MIXED CONDUCTOR
20200118769 · 2020-04-16 ·

A mixed conductor represented by Formula 1:


A.sub.xTi.sub.5yG.sub.zO.sub.12Formula 1 wherein, in Formula 1, A is a monovalent cation, G is at least one of a monovalent cation, a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, or a hexavalent cation, with the proviso that G is not Ti or Cr, wherein 0<x<2, 0.3<y<5, 0<z<5, and 0<3.

POPULATION OF METAL OXIDE NANOSHEETS, PREPARATION METHOD THEREOF, AND ELECTRICAL CONDUCTOR AND ELECTRONIC DEVICE INCLUDING THE SAME

An electrical conductor includes a substrate; and a first conductive layer disposed on the substrate and including a plurality of metal oxide nanosheets, wherein adjacent metal oxide nanosheets of the plurality of metal oxide nanosheets contact to provide an electrically conductive path between the contacting metal oxide nanosheets, wherein the plurality of metal oxide nanosheets include an oxide of Re, V, Os, Ru, Ta, Ir, Nb, W, Ga, Mo, In, Cr, Rh, Mn, Co, Fe, or a combination thereof, and wherein the metal oxide nanosheets of the plurality of metal oxide nanosheets have an average lateral dimension of greater than or equal to about 1.1 micrometers. Also an electronic device including the electrical conductor, and a method of preparing the electrical conductor.

Methods for Detection of Nucleotide Modification
20200095633 · 2020-03-26 ·

This invention relates to the identification of modified cytosine residues, such as 5-methylcytosine (5mC), 5-hydroxymethylcytosine (5hmC) and 5-formylcytosine (5fC) to be distinguished from cytosine (C) in a sample nucleotide sequence. Methods may comprise oxidising or reducing a first portion of polynucleotides which comprise the sample nucleotide sequence; treating the oxidised or reduced first portion and a second portion of polynucleotides with bisulfite; sequencing the polynucleotides in the first and second portions of the population following steps ii) and iii) to produce first and second nucleotide sequences, respectively and; identifying the residue in the first and second nucleotide sequences which corresponds to a cytosine residue in the sample nucleotide sequence. These methods may be useful, for example in the analysis of genomic DNA and/or of RNA.

IRIDIUM AND / OR IRIDIUM OXIDE MICROSPHERE-BASED POROUS MATERIAL, PREPARATION METHOD THEREFOR, AND USES THEREOF

The invention relates to a porous material in the form of microspheres based on iridium and/or iridium oxide, its preparation process, its use as anodic catalyst in a water electrolyser based on a solid polymer electrolyte, also called PEM water electrolyser (with PEM meaning Proton Exchange Membrane or Polymer Electrolyte Membrane) or for the manufacture of light-emitting diodes for various electronic devices or for cars, and a PEM water electrolyser comprising such a material as an anode catalyst.

IRIDIUM-CONTAINING OXIDE, METHOD FOR PRODUCING SAME AND CATALYST CONTAINING IRIDIUM-CONTAINING OXIDE

An iridium-containing oxide having a total pore volume of 0.20 cm.sup.3/g or more, calculated by a BJH method from nitrogen adsorption/desorption isotherm measurement, and a pore distribution having an average pore diameter of 7.0 nm or more.

ETCHING PLATINUM-CONTAINING THIN FILM USING PROTECTIVE CAP LAYER
20200083050 · 2020-03-12 ·

A microelectronic device is formed by forming a platinum-containing layer on a substrate of the microelectronic device. A cap layer is formed on the platinum-containing layer so that an interface between the cap layer and the platinum-containing layer is free of platinum oxide. The cap layer is etchable in an etch solution which also etches the platinum-containing layer. The cap layer may be formed on the platinum-containing layer before platinum oxide forms on the platinum-containing layer. Alternatively, platinum oxide on the platinum-containing layer may be removed before forming the cap layer. The platinum-containing layer may be used to form platinum silicide. The platinum-containing layer may be patterned by forming a hard mask or masking platinum oxide on a portion of the top surface of the platinum-containing layer to block the wet etchant.

ETCHING PLATINUM-CONTAINING THIN FILM USING PROTECTIVE CAP LAYER
20200083050 · 2020-03-12 ·

A microelectronic device is formed by forming a platinum-containing layer on a substrate of the microelectronic device. A cap layer is formed on the platinum-containing layer so that an interface between the cap layer and the platinum-containing layer is free of platinum oxide. The cap layer is etchable in an etch solution which also etches the platinum-containing layer. The cap layer may be formed on the platinum-containing layer before platinum oxide forms on the platinum-containing layer. Alternatively, platinum oxide on the platinum-containing layer may be removed before forming the cap layer. The platinum-containing layer may be used to form platinum silicide. The platinum-containing layer may be patterned by forming a hard mask or masking platinum oxide on a portion of the top surface of the platinum-containing layer to block the wet etchant.

Polyoxometalates Comprising Noble Metals and Post-Transition Metals and Metal Clusters Thereof
20200070131 · 2020-03-05 ·

The invention relates to polyoxometalates represented by the formula (A.sub.n).sup.m+[MM.sub.12X.sub.8O.sub.yR.sub.zH.sub.q].sup.m or solvates thereof, corresponding supported polyoxometalates, and processes for their preparation, as well as corresponding metal clusters, optionally in the form of a dispersion in a liquid carrier medium or immobilized on a solid support, and processes for their preparation, as well as their use in reductive conversion of organic substrate.

Metal-oxide anchored graphene and carbon-nanotube hybrid foam

A metal oxide anchored graphene and carbon nanotube hybrid foam can be formed via a two-step process. The method can include forming at least one graphene layer and a plurality of carbon nanotubes onto a surface of a porous metal substrate by chemical vapor deposition to form a coated porous metal substrate, and depositing a plurality of metal oxide nanostructures onto a surface of the coated porous metal substrate to form the metal oxide anchored graphene and carbon nanotube hybrid foam.