The present invention provides a glass substrate in which in a heat treatment step of sticking a silicon substrate and a glass substrate to each other, an alkali ion is hardly diffused into the silicon substrate, and a residual strain generated in the silicon substrate is small. A glass substrate of the present invention has: an average thermal expansion coefficient .sub.50/100 at 50 C. to 100 C. of 2.70 ppm/ C. to 3.20 ppm/ C.; an average thermal expansion coefficient .sub.200/300 at 200 C. to 300 C. of 3.45 ppm/ C. to 3.95 ppm/ C.; a value .sub.200/300/.sub.50/100 obtained by dividing the average thermal expansion coefficient .sub.200/300 at 200 C. to 300 C. by the average thermal expansion coefficient .sub.50/100 at 50 C. to 100 C. of 1.20 to 1.30; and a content of an alkali metal oxide being 0% to 0.1% as expressed in terms of a molar percentage based on oxides.

A synthetic quartz glass lid is provided comprising a synthetic quartz glass and an adhesive formed on a periphery of a main surface of the window member. Further, an optical device package is provided comprising a box-shaped receptacle having an open upper end, an optical device received in the receptacle, and a window member of synthetic quartz glass bonded to the upper end of the receptacle with an adhesive. The adhesive is a low-melting metallic glass consisting of Te, Ag and at least one element selected from W, V, P, Ba, and Zr.

A synthetic quartz glass lid is provided comprising a synthetic quartz glass and an adhesive formed on a periphery of a main surface of the window member. Further, an optical device package is provided comprising a box-shaped receptacle having an open upper end, an optical device received in the receptacle, and a window member of synthetic quartz glass bonded to the upper end of the receptacle with an adhesive. The adhesive is a low-melting metallic glass consisting of Te, Ag and at least one element selected from W, V, P, Ba, and Zr.

Anodic bonding method are disclosed. In one embodiment, an anodic bonding method may include: (1) providing a first substrate (100) having a semiconductor material; (2) providing a second substrate (200) having a bondable passivation material and contact vias (210); (3) contacting the first substrate and the second substrate (100, 200); (4) providing a resistance layer (300, 220) on the second substrate (200); and (5) applying a potential between the resistance layer and the first substrate.

A semiconductor device comprising a first substrate (100) including silicon may include a bondable passivation (200) made of a bondable material, especially a glass material; at least one contact via (210) extending through the passivation and contacting a region of the first substrate (100); an interface (204) created by anodic bonding between the substrate including silicon and the bondable passivation (200), wherein silicon-oxygen-silicon bonds are formed in the interface in order to provide adhesion between the passivation (200) and the substrate (100)

A vacuum insulated glazing unit comprising a first glass pane and a second glass pane arranged in parallel, the second glass pane spaced apart from the first glass pane, wherein each glass pane comprises inner and outer surfaces, wherein the inner surfaces define a gap therebetween; a plurality of spacers arranged in the gap between of the inner surface of the first glass pane and the inner surface of the second glass pane; and a side seal material attached around a periphery of the first glass pane and the second glass pane, thereby forming a sealed cavity between the glass panes, wherein at least a portion of the inner surface of the first glass pane comprises a strengthened portion that comprises a plurality of implanted ions, wherein the plurality of implanted ions are nitrogen ions, carbon ions, argon ions, or a combination comprising at least one of the foregoing.

A method of bonding a structural component to a building, including the steps of: (i) receiving a structural component including an attachment zone constituting at least 10% of the total surface area of one side of the structural component, wherein the attachment zone has been prepared according to a method including the steps of: a. applying a frit to the attachment zone; and b. tempering the structural component so as to bond the frit to the structural component; (ii) providing a building engagement face at least coextensive with the attachment zone of the structural component; (iii) applying a bonding sealant to a majority of at least one of the attachment zone or the building engagement face; and (iv) engaging the bonding sealant with the other of the attachment zone or the building engagement face.

A method of bonding a structural component to a building, including the steps of: (i) receiving a structural component including an attachment zone constituting at least 10% of the total surface area of one side of the structural component, wherein the attachment zone has been prepared according to a method including the steps of: a. applying a frit to the attachment zone; and b. tempering the structural component so as to bond the frit to the structural component; (ii) providing a building engagement face at least coextensive with the attachment zone of the structural component; (iii) applying a bonding sealant to a majority of at least one of the attachment zone or the building engagement face; and (iv) engaging the bonding sealant with the other of the attachment zone or the building engagement face.

A light selective transmission type glass 10 according to the present invention includes: a glass substrate 12; and a light selective transmission layer 11 provided on at least one main surface of the glass substrate 12. The glass substrate 12 has an average thermal expansion coefficient .sub.50/100 at 50 C. to 100 C. of 2.70 ppm/ C. to 3.20 ppm/ C., an average thermal expansion coefficient .sub.200/300 at 200 C. to 300 C. of 3.45 ppm/ C. to 3.95 ppm/ C., a value .sub.200/300/.sub.50/100 obtained by dividing the average thermal expansion coefficient .sub.200/300 at 200 C. to 300 C. by the average thermal expansion coefficient .sub.50/100 at 50 C. to 100 C. of 1.20 to 1.30, and a content of an alkali metal oxide being 0% to 0.1%.

A light selective transmission type glass 10 according to the present invention includes: a glass substrate 12; and a light selective transmission layer 11 provided on at least one main surface of the glass substrate 12. The glass substrate 12 has an average thermal expansion coefficient .sub.50/100 at 50 C. to 100 C. of 2.70 ppm/ C. to 3.20 ppm/ C., an average thermal expansion coefficient .sub.200/300 at 200 C. to 300 C. of 3.45 ppm/ C. to 3.95 ppm/ C., a value .sub.200/300/.sub.50/100 obtained by dividing the average thermal expansion coefficient .sub.200/300 at 200 C. to 300 C. by the average thermal expansion coefficient .sub.50/100 at 50 C. to 100 C. of 1.20 to 1.30, and a content of an alkali metal oxide being 0% to 0.1%.