An interlayer film for laminated glass that has one-layer structure or a two or more layer-structure includes a first layer containing a polyvinyl acetal resin and a plasticizer, wherein the first layer has a glass transition temperature of 10° C. or lower, and has an elastic modulus of 285,000 Pa or greater at 30° C.

An interlayer film for laminated glass that has one-layer structure or a two or more layer-structure includes a first layer containing a polyvinyl acetal resin and a plasticizer, wherein the first layer has a glass transition temperature of 10° C. or lower, and has an elastic modulus of 285,000 Pa or greater at 30° C.

An interlayer film for laminated glass includes a first layer containing thermoplastic resin and silica particles; and a second layer containing a thermoplastic resin, wherein the first layer has tan δ of 0.8 or greater at 200° C., and wherein the second layer is disposed on a first surface side of the first layer, and has a glass transition temperature higher than a glass transition temperature of the first layer.

An interlayer film for laminated glass includes a first layer containing thermoplastic resin and silica particles; and a second layer containing a thermoplastic resin, wherein the first layer has tan δ of 0.8 or greater at 200° C., and wherein the second layer is disposed on a first surface side of the first layer, and has a glass transition temperature higher than a glass transition temperature of the first layer.

A sapphire composite base material including: an inorganic glass substrate, a polyvinyl butyral or silica intermediate film on the inorganic glass substrate, and a single crystal sapphire film on the intermediate film. There is also provided a method for producing a sapphire composite base material, including steps of: forming an ion-implanted layer inside the single crystal sapphire substrate; forming a polyvinyl butyral or silica intermediate film on at least one surface selected from the surface of the single crystal sapphire substrate before or after the ion implantation, and a surface of an inorganic glass substrate; bonding the ion-implanted surface of the single crystal sapphire substrate to the surface of the inorganic glass substrate via the intermediate film to obtain a bonded body; and transferring a single crystal sapphire film to the inorganic glass substrate via the intermediate film.

A sapphire composite base material including: an inorganic glass substrate, a polyvinyl butyral or silica intermediate film on the inorganic glass substrate, and a single crystal sapphire film on the intermediate film. There is also provided a method for producing a sapphire composite base material, including steps of: forming an ion-implanted layer inside the single crystal sapphire substrate; forming a polyvinyl butyral or silica intermediate film on at least one surface selected from the surface of the single crystal sapphire substrate before or after the ion implantation, and a surface of an inorganic glass substrate; bonding the ion-implanted surface of the single crystal sapphire substrate to the surface of the inorganic glass substrate via the intermediate film to obtain a bonded body; and transferring a single crystal sapphire film to the inorganic glass substrate via the intermediate film.

This invention relates to a microelectronic device comprising: a first support, a second support, first respective faces of the first support and second support being arranged opposite, and a sealing layer between said first faces, characterized in that the sealing layer comprises at least one layer of an ionic conductive material of formula Li.sub.xP.sub.yO.sub.zN.sub.w, with x strictly greater than 0 and less than or equal to 4.5, y strictly greater than 0 and less than or equal to 1, z strictly greater than 0 and less than or equal to 5.5, w greater than or equal to 0 and less than or equal to 1.

This invention relates to a microelectronic device comprising: a first support, a second support, first respective faces of the first support and second support being arranged opposite, and a sealing layer between said first faces, characterized in that the sealing layer comprises at least one layer of an ionic conductive material of formula Li.sub.xP.sub.yO.sub.zN.sub.w, with x strictly greater than 0 and less than or equal to 4.5, y strictly greater than 0 and less than or equal to 1, z strictly greater than 0 and less than or equal to 5.5, w greater than or equal to 0 and less than or equal to 1.

A low CTE boro-aluminosilicate glass having a low brittleness for use in wafer-level-packaging (WLP) applications is disclosed. The glass comprises a composition in mol-% of SiO.sub.2: 60-85, Al.sub.2O.sub.3: 1-17, B.sub.2O.sub.3: 8-20, Na.sub.2O: 0-5, K.sub.2O: 0-5, MgO: 0-10, CaO: 0-10, SrO: 0-10, and BaO: 0-10. An average number of non-bridging oxygen per polyhedron (NBO) is equal to or larger than 0.2 and a ratio B.sub.2O.sub.3/Al.sub.2O.sub.3 is equal to or larger than 0.5. The NBO is defined as NBO=2O.sub.mol/(Si.sub.mol+Al.sub.mol+B.sub.mol)4. A glass carrier wafer made from the low CTE boro-aluminosilicate glass and a use thereof as a glass carrier wafer for the processing of a silicon substrate are also disclosed, as well as a method for providing a low CTE boro-aluminosilicate glass.

A low CTE boro-aluminosilicate glass having a low brittleness for use in wafer-level-packaging (WLP) applications is disclosed. The glass comprises a composition in mol-% of SiO.sub.2: 60-85, Al.sub.2O.sub.3: 1-17, B.sub.2O.sub.3: 8-20, Na.sub.2O: 0-5, K.sub.2O: 0-5, MgO: 0-10, CaO: 0-10, SrO: 0-10, and BaO: 0-10. An average number of non-bridging oxygen per polyhedron (NBO) is equal to or larger than 0.2 and a ratio B.sub.2O.sub.3/Al.sub.2O.sub.3 is equal to or larger than 0.5. The NBO is defined as NBO=2O.sub.mol/(Si.sub.mol+Al.sub.mol+B.sub.mol)4. A glass carrier wafer made from the low CTE boro-aluminosilicate glass and a use thereof as a glass carrier wafer for the processing of a silicon substrate are also disclosed, as well as a method for providing a low CTE boro-aluminosilicate glass.