A composition for solar cell electrodes and a solar cell electrode fabricated using the composition, the composition including a conductive powder; a glass frit; and an organic vehicle, wherein the glass frit has a reaction index (RI) of about 0.5 to about 1.0, as calculated according to Equation 1:

Reaction index (RI)=Ib/Ia<Equation 1> wherein, in Equation 1, Ia denotes a maximum peak intensity measured on a specimen at 20.5 to 20.7 (2) by XRD analysis, the specimen being obtained by mixing the glass frit with Si.sub.3N.sub.4 powder in a weight ratio of 1:1 to prepare pellets, followed by heat-treatment at 800 C. for 10 minutes, and Ib denotes a maximum peak intensity measured on the specimen at 20.75 to 20.95 (2) by XRD analysis.

The present invention relates to a conductive paste composition for a solar cell electrode, including a conductive metal powder, a glass frit and an organic vehicle, wherein the glass frit has a specific composition that enables the formation of a side shape in which a surface slope, measured depending on the height relative to a wafer, increases and then decreases, and upon electrode formation using the conductive paste including such a glass frit, wetting characteristics and spreadability are improved such that the light-receiving area of a solar cell is enlarged, thus increasing short-circuit current, and contact resistance is also improved to thus increase a fill factor (FF), ultimately increasing the power generation efficiency of the solar cell.

A glass composition includes, as expressed by mol % in terms of oxide, from 15 to 40% of PbO, from 25 to 50% of MoO.sub.3, from 5 to 25% of P.sub.2O.sub.5 and from 7 to 15% of ZnO. A glass powder includes the glass composition. The glass powder has D.sub.50 of from 0.3 to 2.0 m, where D.sub.50 is a 50% particle diameter in a volume-based cumulative particle size distribution.

A thick film resistor excluding a toxic lead component from a conductive component and glass and having characteristics equivalent to or superior to conventional resistors in terms of, in a wide resistance range, resistance values, TCR characteristics, current noise characteristics, withstand voltage characteristics and the like. The thick film resistor is formed of a fired product of a resistive composition, wherein the thick film resistor contains ruthenium-based conductive particles containing ruthenium dioxide and a glass component essentially free of a lead component and has a resistance value in the range of 100 / to 10 M/ and a temperature coefficient of resistance within 100 ppm/ C.

There is disclosed an article which is formed of a solid-phase or liquid-phase sintered product of a metal powder, ceramic powder or glass powder. For manufacturing the article, an extrudable mixture which contains the material powder and a thermoplastic binder is shaped into a continuous filament suitable for use in fused filament 3D printers. The printed object is then invested in plaster or other castable refractory. The invested object is then subjected to heating. The heating process burns off the thermoplastic binder and sinters the powders of metal, glass or ceramic, leaving a pure metal, glass or ceramic object. The extrudable mixture is produced by preparing a material powder, preparing a binder, then blending the material powder and the binder together. The extrudable mixture is then extruded into a continuous filament suitable for use in various 3d printing hardware.

A passivation glass coating composition is provided for forming a fired passivation glass layer on a semiconductor substrate having p-n junction. The passivation glass coating composition includes a glass component that is lead free, cadmium free, alkali metal oxides free, and colored transition metal oxides (i.e. metal oxides of V, Fe, Co, Ni, Cr, Cu, Mn) free. The glass component includes bismuth based glasses, and provides a firing temperature range of 500 C. to 900 C., and controlled devitrification. Once fired to a semiconductor device, the fired passivation glass layer provides exceptional device performance including no cracking of the fired passivation glass layer, excellent thermal expansion matching to silicon, good chemical resistance to acid and base, and improved device performance.

A composition for forming an electrode for a solar cell includes a conductive powder, a glass frit, and an organic vehicle, the organic vehicle including a thickener including a structural unit represented by Chemical Formula 1,

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The present invention pertains to a glass characterized by: containing 72-82% of Li.sup.+, 0-21% of Si.sup.4+, and 0-28% of B.sup.3+ in terms of cation %; and containing at least 70% and less than 100% of O.sup.2 and more than 0% and at most 30% of Cl.sup., containing at least 94% and less than 100% of O.sup.2 and more than 0% and at most 6% of S.sup.2, or containing at least 64% and less than 100% of O.sup.2, more than 0% and at most 30% of Cl.sup., and more than 0% and at most 6% of S.sup.2, in terms of anion %.

A composition for solar cell electrodes including a conductive powder, a glass frit, and an organic vehicle. The glass frit contains tellurium (Te), sodium (Na), zinc (Zn), and at least one of lead (Pb) and bismuth (Bi). A molar ratio of the sum of lead and bismuth to zinc ranges from about 1 to about 20. A molar ratio of tellurium to sodium ranges from about 1 to about 15.

To provide a thick film resistor paste for a resistor having a smaller resistance change rate and excellent surge resistance, a thick film resistor using the thick film resistor paste, and an electronic component provided with the thick film resistor. A thick film resistor paste comprises an organic vehicle and a conductive substance-containing glass powder comprising ruthenium oxide and lead ruthenate, the conductive substance-containing glass powder comprises 10 to 70 mass % of conductive substances, a glass composition of the conductive substance-containing glass powder comprises 3 to 30 mass % of silicon oxide. 30 to 90 mass % of lead oxide, 5 to 50 mass % of boron oxide relative to 100 mass % of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.