An improved ceramic material for heat insulation with selection of specific stabilizers and adapted proportions, includes zirconium oxide with 0.2 wt. % to 8.0 wt. % of the base stabilizers: yttrium oxide (Y.sub.2O.sub.3), hafnium oxide (HfO.sub.2), cerium oxide (CeO.sub.2), calcium oxide (CaO), and/or magnesium oxide (MgO), wherein at least yttrium oxide (Y.sub.2O.sub.3) is used, and optionally at least one of the additional stabilizers: 0.2 wt. % to 20 wt. % of erbium oxide (Er.sub.2O.sub.3) and/or ytterbium oxide (Yb.sub.2O.sub.3).

The ceramic joint body according to the present disclosure includes: a first member made of ceramic and including a first flow channel configured to feed fluid; and a second member made of ceramic and including a second flow channel connected to the first flow channel to feed the fluid. The ceramic includes zirconium oxide and aluminum oxide, and at least one of the zirconium oxide and the aluminum oxide is a primary constituent, and a first opposing surface of the first member, which faces the second member, and a second opposing surface of the second member, which faces the first member, are connected by diffusion bonding.

The ceramic joint body according to the present disclosure includes: a first member made of ceramic and including a first flow channel configured to feed fluid; and a second member made of ceramic and including a second flow channel connected to the first flow channel to feed the fluid. The ceramic includes zirconium oxide and aluminum oxide, and at least one of the zirconium oxide and the aluminum oxide is a primary constituent, and a first opposing surface of the first member, which faces the second member, and a second opposing surface of the second member, which faces the first member, are connected by diffusion bonding.

The invention relates to a method for annealing of at least two wafers bonded via low-temperature direct bonding comprising heating the bonded wafers up to a first annealing temperature in the range of 100° C. to 500° C., preferably 150° C. to 400° C., even more preferred 150° C. to 200° C., holding the first annealing temperature in a range of 1 to 4 hours, preferably 1 to 3 hours, cooling down the bonded wafers to room temperature, re-heating the bonded wafers to a second annealing temperature in the range of 100° C. to 500° C., preferably 150° C. to 400° C., even more preferred 150° C. to 200° C., and cooling down the bonded wafers to room temperature.

Methods of forming joinery between components formed from dissimilar materials, and assemblies utilizing the joinery. The components include interface surfaces having complementary peaks and valleys that interlock. A compliant interface is formed between the interface surfaces and the interface can be configured to provide functionality.

The electrostatic chuck includes an insulating substrate having a placement surface on which a suction target object is placed and an opposite surface provided on an opposite side to the placement surface; and a gas hole penetrating from the opposite surface to the placement surface. The gas hole has a first hole portion extending from the opposite surface toward the placement surface, a second hole portion extending from the placement surface toward the opposite surface, and a third hole portion provided between the first hole portion and the second hole portion and formed to communicate the first hole portion and the second hole portion each other. The first hole portion is provided not to overlap with the second hole portion in a plan view.

This disclosure relates to a polycrystalline diamond (PCD) body comprising a PCD material formed of intergrown diamond grains forming a diamond network, and an iron-containing binder.

An article for a high temperature environment includes a first ceramic composite substrate, a second ceramic composite substrate, and a high temperature interface between a first surface of the first ceramic composite substrate and a second surface of the second ceramic composite substrate. The high temperature interface includes at least one high temperature interface layer that includes a ceramic matrix and a plurality of fibers distributed through the ceramic matrix.

A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, having a circuit pattern provided on a ceramic substrate with a braze material layer interposed therebetween, and a protruding portion formed by the braze material layer protruding from the outer edge of the circuit pattern, wherein: the braze material layer includes Ag, Cu, Ti, and Sn or In; and an Ag-rich phase is formed continuously for 300 μm or more, towards the inside, from an outer edge of the protruding portion, along a bonding interface between the ceramic substrate and the circuit pattern, and has a bonding void ratio of 1.0% or less.

Disclosed herein are embodiments of low temperature co-fireable barium tungstate materials which can be used in combination with high dielectric materials, such as nickel zinc ferrite, to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the material can include flux, such as bismuth vanadate, to reduce co-firing temperatures.