This invention includes fusogenic compounds, and compositions and methods of use thereof. The fusogenic compounds can be used for making nanoparticle compositions for use in biopharmaceuticals and therapeutics. More particularly, this invention relates to compounds, compositions and methods for providing nanoparticles to incorporate or encapsulate active agents, to deliver and distribute the active agents to cells, tissues, organs, and subjects.

This invention includes fusogenic compounds, and compositions and methods of use thereof. The fusogenic compounds can be used for making nanoparticle compositions for use in biopharmaceuticals and therapeutics. More particularly, this invention relates to compounds, compositions and methods for providing nanoparticles to incorporate or encapsulate active agents, to deliver and distribute the active agents to cells, tissues, organs, and subjects.

This disclosure relates to processes for preparing compounds that are useful in the treatment of disease, such as cancer, in mammals. In particular, the invention described herein pertains to processes for preparing compounds capable of targeting PSMA expressing cells and useful in the treatment of diseases caused by PSMA expressing cells, such as prostate cancer.

The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom.

AnBmXo  [Chemical Formula 1] wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1.

According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.

The invention relates to a compound according to formula I wherein when R.sub.5 is H, and R.sub.1 and R.sub.2 form a ring system, then said compound is selected from the following compounds of formula II or formula IV or when R.sub.2 is H, and R.sub.1 and R.sub.5 form a ring system, then said compound has formula III

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The present invention includes novel substituted bicyclic (such as 4-substituted-chromane-8-carboxamide compounds), and compositions comprising the same, that can be used to treat or prevent hepatitis B virus (HBV) infections in a patient. In certain embodiments, the compounds and compositions of the invention are capsid inhibitors.

The present invention includes novel substituted bicyclic (such as 4-substituted-chromane-8-carboxamide compounds), and compositions comprising the same, that can be used to treat or prevent hepatitis B virus (HBV) infections in a patient. In certain embodiments, the compounds and compositions of the invention are capsid inhibitors.

Disclosed is a novel transition metal complex containing N-heterocyclic carbene and a sulfonamide group, or N-heterocyclic carbene and an amide group, and application thereof, the traquesnsition metal complex having a wider range of general purposes in olefin metathesis and being able to be variably controlled in reactivity.

Disclosed is a novel transition metal complex containing N-heterocyclic carbene and a sulfonamide group, or N-heterocyclic carbene and an amide group, and application thereof, the traquesnsition metal complex having a wider range of general purposes in olefin metathesis and being able to be variably controlled in reactivity.

The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom.

AnBmXo[Chemical Formula 1] wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1.

According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.