Disclosed herein are compounds of the general Formula (I), and methods of synthesizing a substituted bicyclo[1.1.1]pentane using a Group VII or Group IX transition metal compound.

Disclosed herein are compounds of the general Formula (I), and methods of synthesizing a substituted bicyclo[1.1.1]pentane using a Group VII or Group IX transition metal compound.

The present invention discloses an organic functional compound for preparing an organic electronic device and an application thereof. The organic functional compound has a general formula (I). The organic functional compound comprises an organic functional group and a solubilizing group, thereby imparting a good solubility and film-forming ability. The organic functional compound also excels in maintaining the performance of the functional group in a device. The organic functional compound and a composition or mixture comprising the organic functional compound have a good printability and film-forming ability, facilitating solution-processing, particularly in printing techniques, and obtaining a high-performance small-molecule organic electronic device, particularly an organic electroluminescent device.

F?SG].sub.k (I)

Provided are compounds of Formula (I):

##STR00001## or a pharmaceutically acceptable salt thereof, wherein Ring A, Ring B, L, R.sup.B, R.sup.C, n, and p are as defined herein.

Also provided are pharmaceutically acceptable compositions comprising a compound of Formula (I), or a pharmaceutically acceptable salt thereof.

Also provided are methods of using a compound of Formula (I), or a pharmaceutically acceptable salt thereof.

The invention relates to novel organic semiconducting compounds containing a polycyclic unit, to methods for their preparation and educts or intermediates used therein, to compositions, polymer blends and formulations containing them, to the use of the compounds, compositions and polymer blends as organic semiconductors in, or for the preparation of, organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photo-detectors (OPD), organic field effect transistors (OFET) and organic light emitting diodes (OLED), and to OE, OPV, PSC, OPD, OFET and OLED devices comprising these compounds, compositions or polymer blends.

A process for the preparation of a compound of formula (I) wherein R.sub.1 is hydrogen, fluoro or chloro; which process comprises: a) reacting a compound of formula (II) wherein R.sub.1 is hydrogen, fluoro or chloro; with a nitration agent to the compound of formula (III) wherein R.sub.1 is hydrogen, fluoro or chloro; b) reacting the compound of formula (III) with trichloroisocyanuric acid in the presence of sulfuric acid or fuming sulfuric acid to the compound of formula (IV) wherein R1 is hydrogen, fluoro or chloro; and c) reacting the compound of formula (III) with chlorine gas at a temperature from 180 C. to 250 C. to the compound of formula (I). ##STR00001##

Disclosed are compositions of lipid nanoparticles (LNP) comprising an ionizable cationic lipid, a phospholipid, a sterol, and a PEG-lipid (non-functionalized and optionally functionalized). The functionalized PEG-lipid can be conjugated with a binding moiety to create a targeted LNP (tLNP). The disclosed tLNP preferentially deliver a nucleic acid molecule or other negatively charged payload to cells expressing a cell surface antigen recognized by the binding moiety of the tLNP, and are better tolerated, as compared to LNPs and tLNPs comprising ionizable cationic lipids found in marketed pharmaceuticals comprising LNPs.

A growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom are disclosed. The growth inhibitor is represented by Chemical Formula 1 [AnBmXo]. In the Chemical Formula 1, A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1. Side reactions are suppressed to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.

A growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom are disclosed. The growth inhibitor is represented by Chemical Formula 1 [AnBmXo]. In the Chemical Formula 1, A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1. Side reactions are suppressed to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.

The present invention generally relates to broad-spectrum antiviral compounds that can be used as preventive and/or therapeutic antiviral medicine; pharmaceutical compositions or combinations comprising such compounds; and compounds or pharmaceutical compositions or combinations for use in the treatment (e.g., for preventive and/or therapeutic use) of viral infections.