A material for lithography containing a tellurium-containing compound or a tellurium-containing resin, a production method therefor, a composition for lithography, a pattern formation method, a compound, a resin, and a method for purifying the compound or the resin.

A material for lithography containing a tellurium-containing compound or a tellurium-containing resin, a production method therefor, a composition for lithography, a pattern formation method, a compound, a resin, and a method for purifying the compound or the resin.

Novel organodiaryl selenoxides and processes for preparation thereof, and use thereof as ligand in complexes.

Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge.sub.2Sb.sub.2Te.sub.5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge.sub.2Sb.sub.2Te.sub.5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

A polymer including tellurium in the main chain, which is prepared by reacting (A) a compound having a plurality of cyclic (thio) ether groups, and (B) TeX.sub.4, wherein X is a halogen atom.

A polymer including tellurium in the main chain, which is prepared by reacting (A) a compound having a plurality of cyclic (thio) ether groups, and (B) TeX.sub.4, wherein X is a halogen atom.