C07D307/00

Preparation of phenyl compounds

The invention relates to a method for preparing a compound comprising two phenyl groups by reacting a bisfuranic compound with a dienophile; and to such compounds.

Preparation of phenyl compounds

The invention relates to a method for preparing a compound comprising two phenyl groups by reacting a bisfuranic compound with a dienophile; and to such compounds.

Process for Preparing 2-exo-(2-Methylbenzyloxy)-1-methyl-4-isopropyl-7-oxabicyclo[2.2.1]heptane

This invention relates to a process for preparing ()-2-exo-(2-Methylbenzyloxy)-1-methyl-4-isopropyl-7-oxabicyclo[2.2.1]heptane of the formula (I)

##STR00001##

any of its individual enantiomers or any non-racemic mixture thereof, comprising the steps of (a) reacting ()-2-exo-hydroxy-1-methyl-4-isopropyl-7-oxabicyclo[2.2.1]heptane of the formula (II)

##STR00002## any of its individual enantiomers or any non-racemic mixture thereof with a 2-Methylbenzyl compound of the formula (III)

##STR00003## wherein X is a leaving group in the presence of at least one base capable of forming water or a C.sub.1-C.sub.4 alkyl alcohol under the reaction conditions, and at least one inert organic solvent, and (b) simultaneously removing water, the C.sub.1-C.sub.4 alkyl alcohol or any mixture thereof from the reaction mixture.

Process for Preparing 2-exo-(2-Methylbenzyloxy)-1-methyl-4-isopropyl-7-oxabicyclo[2.2.1]heptane

This invention relates to a process for preparing ()-2-exo-(2-Methylbenzyloxy)-1-methyl-4-isopropyl-7-oxabicyclo[2.2.1]heptane of the formula (I)

##STR00001##

any of its individual enantiomers or any non-racemic mixture thereof, comprising the steps of (a) reacting ()-2-exo-hydroxy-1-methyl-4-isopropyl-7-oxabicyclo[2.2.1]heptane of the formula (II)

##STR00002## any of its individual enantiomers or any non-racemic mixture thereof with a 2-Methylbenzyl compound of the formula (III)

##STR00003## wherein X is a leaving group in the presence of at least one base capable of forming water or a C.sub.1-C.sub.4 alkyl alcohol under the reaction conditions, and at least one inert organic solvent, and (b) simultaneously removing water, the C.sub.1-C.sub.4 alkyl alcohol or any mixture thereof from the reaction mixture.

Process for the preparation of limonene-4-ol

The present invention relates to a process for the preparation of limonene-4-ol by an epoxide ring opening isomerization of terpinolene epoxide.

RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID DIFFUSION CONTROL AGENT, CARBOXYLIC ACID SALT AND CARBOXYLIC ACID
20190391488 · 2019-12-26 · ·

A radiation-sensitive resin composition contains: a polymer having an acid-labile group, a radiation-sensitive acid generator, a compound represented by the following formula (1), and a solvent. In the formula (1), X represents an oxygen atom or a sulfur atom; R.sup.1 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; R.sup.2 to R.sup.5 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and optionally two or more of R.sup.2 to R.sup.5 taken together represent an alicyclic structure having 3 to 20 ring atoms or an aliphatic heterocyclic structure having 3 to 20 ring atoms together with the carbon atom to which the two or more of R.sup.2 to R.sup.5 bond; Z.sup.n+ represents a cation having a valency of n; and n is an integer of 1 to 3.

##STR00001##

RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID DIFFUSION CONTROL AGENT, CARBOXYLIC ACID SALT AND CARBOXYLIC ACID
20190391488 · 2019-12-26 · ·

A radiation-sensitive resin composition contains: a polymer having an acid-labile group, a radiation-sensitive acid generator, a compound represented by the following formula (1), and a solvent. In the formula (1), X represents an oxygen atom or a sulfur atom; R.sup.1 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; R.sup.2 to R.sup.5 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and optionally two or more of R.sup.2 to R.sup.5 taken together represent an alicyclic structure having 3 to 20 ring atoms or an aliphatic heterocyclic structure having 3 to 20 ring atoms together with the carbon atom to which the two or more of R.sup.2 to R.sup.5 bond; Z.sup.n+ represents a cation having a valency of n; and n is an integer of 1 to 3.

##STR00001##

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND

An actinic ray-sensitive or radiation-sensitive resin composition contains a compound represented by general formula (S1) and an acid decomposable resin. In the general formula (S1), Q.sup.1, Q.sup.2, Q.sup.3, Q.sup.4, and Q.sup.5 each independently represent a hydrogen atom or a substituent, provided that at least one of Q.sup.1, Q.sup.2, Q.sup.3, Q.sup.4, or Q.sup.5 represents a substituent including an aryloxy group represented by general formula (QR1), Lq.sup.1 represents a single bond or a divalent linking group; and M.sup.+ represents an organic cation. In the general formula (QR1), G.sup.1, G.sup.2, G.sup.3, G.sup.4, and G.sup.5 each independently represent a hydrogen atom or a substituent, provided that at least one of G.sup.1, G.sup.2, G.sup.3, G.sup.4, or G.sup.5 represents a substituent including an ester group; and * represents a bonding position.

##STR00001##

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND

An actinic ray-sensitive or radiation-sensitive resin composition contains a compound represented by general formula (S1) and an acid decomposable resin. In the general formula (S1), Q.sup.1, Q.sup.2, Q.sup.3, Q.sup.4, and Q.sup.5 each independently represent a hydrogen atom or a substituent, provided that at least one of Q.sup.1, Q.sup.2, Q.sup.3, Q.sup.4, or Q.sup.5 represents a substituent including an aryloxy group represented by general formula (QR1), Lq.sup.1 represents a single bond or a divalent linking group; and M.sup.+ represents an organic cation. In the general formula (QR1), G.sup.1, G.sup.2, G.sup.3, G.sup.4, and G.sup.5 each independently represent a hydrogen atom or a substituent, provided that at least one of G.sup.1, G.sup.2, G.sup.3, G.sup.4, or G.sup.5 represents a substituent including an ester group; and * represents a bonding position.

##STR00001##

Salt, acid generator, resist composition and method for producing resist pattern

A salt represented by formula (I), an acid generator and a resist composition: ##STR00001##
wherein R.sup.1, R.sup.2 and R.sup.3 each represent a hydroxy group, OR.sup.10, OCOOR.sup.10, O-L.sup.1-COOR.sup.10; R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8 and R.sup.9 each represent a halogen atom, a hydroxy group, etc.; L.sup.1 represents an alkanediyl group; R.sup.10 represents an acid-labile group; X.sup.1, X.sup.2 and X.sup.3 each represent an oxygen atom or a sulfur atom; m1 and m7 represent an integer of 0 to 5, m2 to m6 and m8, m9 represent an integer of 0 to 4, in which 0m1+m75, 0m2+m84, 0m3+m94, and at least one of m1, m2 and m3 represents an integer of 1 or more; X.sup.4 represents a single bond, CH.sub.2, O, S, etc.; and AI.sup. represents an organic anion.