The present disclosure relates to improved processes for the preparation of metal hydrides. The present disclosure also relates to metal hydrides, e.g., metal hydrides prepared by the processes described herein, that exhibit enhanced hydrogen storage capacity when used as hydrogen storage systems.

The present invention relates to a novel ligand compound, a transition metal compound and a catalyst composition comprising the same. The novel ligand compound and the transition metal compound of the present invention may be useful as a catalyst of polymerization reaction for preparing an olefin-based polymer having a low density.

A group 5 metal compound according to an embodiment of the present disclosure is represented by any one of the following <Chemical Formula 1> and <Chemical Formula 2>: ##STR00001## In <Chemical Formula 1> and <Chemical Formula 2>, M is any one selected from group 5 metal elements, n is any one selected from an integer of 1 to 5, R.sub.1 is any one selected from a linear alkyl group having 3 to 6 carbon atoms and a branched alkyl group having 3 to 6 carbon atoms, and R.sub.2 and R.sub.3 are each independently any one selected from hydrogen, a linear alkyl group having 1 to 4 carbon atoms, and a branched alkyl group having 1 to 4 carbon atoms.

A group 5 metal compound according to an embodiment of the present disclosure is represented by any one of the following <Chemical Formula 1> and <Chemical Formula 2>: ##STR00001## In <Chemical Formula 1> and <Chemical Formula 2>, M is any one selected from group 5 metal elements, n is any one selected from an integer of 1 to 5, R.sub.1 is any one selected from a linear alkyl group having 3 to 6 carbon atoms and a branched alkyl group having 3 to 6 carbon atoms, and R.sub.2 and R.sub.3 are each independently any one selected from hydrogen, a linear alkyl group having 1 to 4 carbon atoms, and a branched alkyl group having 1 to 4 carbon atoms.

An organometallic adduct compound and a method of manufacturing an integrated circuit device, the organometallic adduct compound being represented by General Formula (I):

##STR00001##

Compounds, compositions and methods are provided for the inhibition of ENPP1. Aspects of the subject methods include contacting a sample with a ENPP1 inhibitor to inhibit cGAMP hydrolysis activity of ENPP1. In some cases, the ENPP1 inhibitor is cell impermeable. Also provided are compositions and methods for treating cancer. Aspects of the methods include administering to a subject a therapeutically effective amount of a ENPP1 inhibitor to treat the subject for cancer. In certain cases, the cancer is a solid tumor cancer. Also provided are methods of administering radiation therapy to a subject either before or after administering an ENPP1 inhibitor. The radiation therapy can be administered at a dosage and/or frequency effective to reduce radiation damage to the subject. In certain cases, the method is performed in combination with a chemotherapeutic agent, or a checkpoint inhibitor, or both.

Described herein are Group V and VI compounds used as precursors for depositing Group V and VI-containing films. Ligands with alkyl, amide, imide, amidinate groups and/or cyclopentadienyl (Cp) ligands are used to form Group V and VI complexes used as precursors. Examples of Group V and VI precursor compounds include, but are not limited to, Cp amide imide alkyl vanadium compounds, Cp amide imide alkylamide vanadium compounds, Cp amide imide alkoxide vanadium compounds, Cp amide imide amidinate vanadium compounds, and alkylimide vanadium trichloride compounds. The Group V and VI precursors are used for deposition on substrate surfaces with superior film properties such as uniformity, continuity, and low resistance. Examples of substrate surfaces for deposition of metal-containing films include, but are not limited to metals, metal oxides, and metal nitrides.

Described herein are Group V and VI compounds used as precursors for depositing Group V and VI-containing films. Ligands with alkyl, amide, imide, amidinate groups and/or cyclopentadienyl (Cp) ligands are used to form Group V and VI complexes used as precursors. Examples of Group V and VI precursor compounds include, but are not limited to, Cp amide imide alkyl vanadium compounds, Cp amide imide alkylamide vanadium compounds, Cp amide imide alkoxide vanadium compounds, Cp amide imide amidinate vanadium compounds, and alkylimide vanadium trichloride compounds. The Group V and VI precursors are used for deposition on substrate surfaces with superior film properties such as uniformity, continuity, and low resistance. Examples of substrate surfaces for deposition of metal-containing films include, but are not limited to metals, metal oxides, and metal nitrides.

An apparatus and method is provided for coating a surface of a material with a film of porous coordination polymer. A first substrate having a first surface to be coated is positioned in a processing chamber such that the first surface is placed in a substantially opposing relationship to a second surface. In some embodiments, the second surface is provided by a wall of the processing chamber, and in other embodiments the second surface is provided by a second substrate to be coated. The first substrate is held such that a gap exists between the first and second surfaces, and the gap is filled with at least one reaction mixture comprising reagents sufficient to form the crystalline film on at least the first surface. A thin gap (e.g., having a thickness less than 2 mm) between the first and second surfaces is effective for producing a high quality film having a thickness less than 100 μm. Confining the volume of the reaction mixture to a thin layer adjacent the substrate surface significantly reduces problems with sedimentation and concentration control. In some embodiments, the size, shape, or average thickness of the gap is adjusted during formation of the film in response to feedback from at least one film growth monitor.

An apparatus and method is provided for coating a surface of a material with a film of porous coordination polymer. A first substrate having a first surface to be coated is positioned in a processing chamber such that the first surface is placed in a substantially opposing relationship to a second surface. In some embodiments, the second surface is provided by a wall of the processing chamber, and in other embodiments the second surface is provided by a second substrate to be coated. The first substrate is held such that a gap exists between the first and second surfaces, and the gap is filled with at least one reaction mixture comprising reagents sufficient to form the crystalline film on at least the first surface. A thin gap (e.g., having a thickness less than 2 mm) between the first and second surfaces is effective for producing a high quality film having a thickness less than 100 μm. Confining the volume of the reaction mixture to a thin layer adjacent the substrate surface significantly reduces problems with sedimentation and concentration control. In some embodiments, the size, shape, or average thickness of the gap is adjusted during formation of the film in response to feedback from at least one film growth monitor.