A process of producing an extinguishing agent includes dissolving 5 g to 90 g of diammonium hydrogen phosphate, 0.1 g to 60 g of urea, 1 g to 90 g of ammonium carbonate, 5 g to 90 of ammonium sulfate, and 20 g to 250 g of potassium carbonate in 400 ml to 550 ml of water at a temperature of 30° C. to 90° C. to form a first solution; mixing the first solution with 5 g to 500 g of surfactant to undergo a first reaction for forming a second solution; and mixing the second solution with 1000 ml of water to undergo a second reaction for forming an extinguishing agent.

A process of producing an extinguishing agent includes dissolving 5 g to 90 g of diammonium hydrogen phosphate, 0.1 g to 60 g of urea, 1 g to 90 g of ammonium carbonate, 5 g to 90 of ammonium sulfate, and 20 g to 250 g of potassium carbonate in 400 ml to 550 ml of water at a temperature of 30° C. to 90° C. to form a first solution; mixing the first solution with 5 g to 500 g of surfactant to undergo a first reaction for forming a second solution; and mixing the second solution with 1000 ml of water to undergo a second reaction for forming an extinguishing agent.

Compounds, compositions and methods are provided for the inhibition of ENPP1. Aspects of the subject methods include contacting a sample with a ENPP1 inhibitor to inhibit cGAMP hydrolysis activity of ENPP1. In some cases, the ENPP1 inhibitor is cell impermeable. Also provided are compositions and methods for treating cancer. Aspects of the methods include administering to a subject a therapeutically effective amount of a ENPP1 inhibitor to treat the subject for cancer. In certain cases, the cancer is a solid tumor cancer. Also provided are methods of administering radiation therapy to a subject either before or after administering an ENPP1 inhibitor. The radiation therapy can be administered at a dosage and/or frequency effective to reduce radiation damage to the subject. In certain cases, the method is performed in combination with a chemotherapeutic agent, or a checkpoint inhibitor, or both.

The present disclosure provides a complex having a metal and ligand anionic complex that is counterbalanced by a cation. The complex can be suited for many uses including in a battery.

The present disclosure provides a complex having a metal and ligand anionic complex that is counterbalanced by a cation. The complex can be suited for many uses including in a battery.

Compounds useful as biologically active compounds are disclosed. The compounds have the following structure (I): ##STR00001##
or a stereoisomer, tautomer or salt thereof, wherein R.sup.1, R.sup.2, R.sup.3, L, L.sup.1, L.sup.2, L.sup.3, M and n are as defined herein. Methods associated with preparation and use of such compounds is also provided.

This disclosure is generally directed to polymerization catalysts derived from 1,5-diazabicyclooctanes, catalyst systems utilizing such catalysts, and processes to polymerize alpha olefins therewith.

Provided are a novel naphthalocyanine compound, which has strong absorption in a near-infrared range, extremely weak absorption in a visible range, and high resistance such as light resistance and heat resistance, and exhibits excellent solubility in an organic solvent or a resin, a heat ray shielding material, and uses of the naphthalocyanine compound such as a heat ray shielding material and the like. The naphthalocyanine compound is represented by General Formula (1). ##STR00001## wherein, in Formula (1), M represents two hydrogen atoms, a divalent metal, or a derivative of a trivalent or tetravalent metal, R.sub.1 to R.sub.3 each independently represent a hydrogen atom, a halogen atom, or a linear, branched, or cyclic alkyl group, A represents Formula (2), and B represents Formula (3), ##STR00002## wherein, in Formula (2), R.sub.4 to R.sub.8 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, an aryloxy group, or an arylthio group, and ##STR00003## wherein, in Formula (3), X represents an oxygen atom, a sulfur atom, and or an imino group, R.sub.9 to R.sub.13 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an ester group, an amide group, or a sulfonamide group.

A Brønsted-Lowry acid initiator system for cationic polymerization of an ethylenically unsaturated monomer involves an initiator having a structure of Formula (I) in an anhydrous polymerization medium: ##STR00001## where: M is tantalum (Ta), vanadium (V) or niobium (Nb); R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are the same or different and are independently H, F, Cl, Br, I, alkyl or aryl, or two or more of R.sub.2, R.sub.3, R.sub.4 and R.sub.5 on a same benzene ring are taken together to form a bicyclic, tricyclic or tetracyclic moiety with the benzene ring, with the proviso that all of R.sub.1, R.sub.2, R.sub.3 and R.sub.4 on the same benzene ring are not H; L is absent or a molecule that coordinates to H.sup.+; and, x is 0 when L is absent, or x is 0.5 or more when L is present.

Compounds are synthesized with bicyclic amidinate ligands attached to one or more metal atoms. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Copper metal films are formed on heated substrates by the reaction of copper(I) bicyclic amidinate vapor and hydrogen gas, whereas reaction with water vapor produces copper oxide. Silver and gold films were deposited on surfaces by reaction of their respective bicyclic amidinate vapors with hydrogen gas. Reaction of cobalt(II) bis(bicyclic amidinate) vapor, ammonia gas and hydrogen gas deposits cobalt metal films on heated substrates, while reaction with ammonia produces cobalt nitride and reaction with water vapor produces cobalt oxide. Ruthenium metal films are deposited by reaction of ruthenium(II) bis(bicyclic amidinate) or ruthenium(III) tris(bicyclic amidinate) at a heated surface either with or without a co-reactant such as hydrogen gas or ammonia or oxygen. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. Hafnium oxide films are deposited by reaction of hafnium(IV) tetrakis(bicyclic amidinate) with oxygen sources such as water, hydrogen peroxide or ozone. The HfO.sub.2 films have high dielectric constant and low leakage current, suitable for applications as an insulator in microelectronics. The films have very uniform thickness and complete step coverage in narrow holes.