A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: ##STR00001## wherein, in General formula I, R.sup.1, R.sup.4, R.sup.5, R.sup.6, R.sup.7, and R.sup.8 are each independently a hydrogen atom, a C1-C6 linear or branched alkyl group or a C3-C6 cyclic hydrocarbon group, at least one of R.sup.4, R.sup.5, R.sup.6, R.sup.7, and R.sup.8 being a C1-C6 linear or branched alkyl group, and R.sup.2 and R.sup.3 are each independently a hydrogen atom, a halogen atom, a C1-C6 linear or branched alkyl group, or a C3-C6 cyclic hydrocarbon group.

A mixture M includes at least one compound A selected from (a1) a compound of the general formula (I): R.sup.1R.sup.2R.sup.3Si—H, and/or (a2) a compound of the general formula (I′): (SiO.sub.4/2).sub.a(R.sup.xSiO.sub.3/2).sub.b(HSiO.sub.3/2).sub.b′(R.sup.x.sub.2SiO.sub.2/2).sub.c(R.sup.xHSiO.sub.2/2).sub.c′(H.sub.2SiO.sub.2/2).sub.c″(R.sup.x.sub.3SiO.sub.1/2).sub.d(HR.sup.x.sub.2SiO.sub.1/2).sub.d′(H.sub.2R.sup.xSiO.sub.1/2).sub.d″(H.sub.3SiO.sub.1/2).sub.d′″, and at least one compound B selected from (b1) a compound of the general formula (II): R.sup.4R.sup.5R.sup.6Si—O—R.sup.7, and/or (b2) a compound of the general formula (II′): R.sup.x.sub.3Si—O[—SiR.sup.x.sub.2—O].sub.m—[Si(OR.sup.7.sub.3)R.sup.x—O].sub.n—SiR.sup.x.sub.3, and at least one compound C selected from the cationic germanium(II) compound of the general formula (III): ([Ge(II)Cp].sup.+).sub.aX.sup.a−.

A mixture M includes at least one compound A selected from (a1) a compound of the general formula (I): R.sup.1R.sup.2R.sup.3Si—H, and/or (a2) a compound of the general formula (I′): (SiO.sub.4/2).sub.a(R.sup.xSiO.sub.3/2).sub.b(HSiO.sub.3/2).sub.b′(R.sup.x.sub.2SiO.sub.2/2).sub.c(R.sup.xHSiO.sub.2/2).sub.c′(H.sub.2SiO.sub.2/2).sub.c″(R.sup.x.sub.3SiO.sub.1/2).sub.d(HR.sup.x.sub.2SiO.sub.1/2).sub.d′(H.sub.2R.sup.xSiO.sub.1/2).sub.d″(H.sub.3SiO.sub.1/2).sub.d′″, and at least one compound B selected from (b1) a compound of the general formula (II): R.sup.4R.sup.5R.sup.6Si—O—R.sup.7, and/or (b2) a compound of the general formula (II′): R.sup.x.sub.3Si—O[—SiR.sup.x.sub.2—O].sub.m—[Si(OR.sup.7.sub.3)R.sup.x—O].sub.n—SiR.sup.x.sub.3, and at least one compound C selected from the cationic germanium(II) compound of the general formula (III): ([Ge(II)Cp].sup.+).sub.aX.sup.a−.

The present disclosure provides catalyst compounds comprising asymmetric bridged metallocenes containing a ligand having at least one saturated ring, catalyst systems including such compounds, and uses thereof. Catalyst compounds of the present disclosure can include indacenyl-type ligands. In another class of embodiments, the present disclosure is directed to polymerization processes to produce polyolefin polymers from catalyst systems including one or more olefin polymerization catalysts, at least one activator, and an optional support.

The present disclosure provides catalyst compounds comprising asymmetric bridged metallocenes containing a ligand having at least one saturated ring, catalyst systems including such compounds, and uses thereof. Catalyst compounds of the present disclosure can include indacenyl-type ligands. In another class of embodiments, the present disclosure is directed to polymerization processes to produce polyolefin polymers from catalyst systems including one or more olefin polymerization catalysts, at least one activator, and an optional support.

The present invention provides a novel ligand compound, a transition metal compound and a catalyst composition including the same.

The present invention provides a novel ligand compound, a transition metal compound and a catalyst composition including the same.

Molybdenum(0) coordination complexes comprising an arene ligand and one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

The alkylation of transition metal coordination catalyst complexes (such as metallocenes and/or post-metallocenes) in non-polar solvents with high conversion to the dialkylated transition metal coordination catalyst complex may be accomplished by reacting (a) a transition metal coordination catalyst complex comprising a transition metal linked to at least one an anionic donor ligand and at least one leaving group having a non-carbon atom directly linked to the transition metal, (b) an aluminum alkyl, and (c) a fluoride salt at 0° C. to 85° C. in a non-polar solvent to yield an alkylated transition metal coordination catalyst complex.

The alkylation of transition metal coordination catalyst complexes (such as metallocenes and/or post-metallocenes) in non-polar solvents with high conversion to the dialkylated transition metal coordination catalyst complex may be accomplished by reacting (a) a transition metal coordination catalyst complex comprising a transition metal linked to at least one an anionic donor ligand and at least one leaving group having a non-carbon atom directly linked to the transition metal, (b) an aluminum alkyl, and (c) a fluoride salt at 0° C. to 85° C. in a non-polar solvent to yield an alkylated transition metal coordination catalyst complex.