Patent classifications
C09D149/00
Resist underlayer film material, patterning process, and method for forming resist underlayer film
A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an m number of partial structures each independently shown by following formula (3); m and n each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or O(CH.sub.2).sub.p; k represents integer of 1 to 5; p represents integer of 1 to 10; R.sup.01 represents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material. ##STR00001##
Resist underlayer film material, patterning process, and method for forming resist underlayer film
A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an m number of partial structures each independently shown by following formula (3); m and n each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or O(CH.sub.2).sub.p; k represents integer of 1 to 5; p represents integer of 1 to 10; R.sup.01 represents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material. ##STR00001##
COATING COMPOSITION CONTAINING A SORBIC ACID ESTER AND A PHOTOCATALYST
Provided is a composition comprising a) a stable aqueous dispersion of polymer particles, b) a sorbic acid ester, c) a photocatalyst and d) a free radical precursor. The composition provides a way to increase Koenig hardness of a coating rapidly and with reduced yellowing.
Curable compound
Provided is a curable compound having a low melting temperature, having excellent workability as a result of having good solvent solubility, and being capable of forming a cured product having excellent heat resistance. The curable compound according to an embodiment of the present invention includes the following characteristics (a) to (e). (a) Number average molecular weight (calibrated with polystyrene standard): 1000 to 15000. (b) Proportion of a structure derived from an aromatic ring in the total amount of the curable compound: 50 wt. % or greater. (c) Solvent solubility at 25? C.: 1 g/100 g or greater. (d) Glass transition temperature: 280? C. or lower. (e) 5% Weight loss temperature (T.sub.d5) measured at a rate of temperature increase of 10? C./min (in nitrogen), for a cured product of the curable compound: 300? C. or higher.
Curable compound
Provided is a curable compound having a low melting temperature, having excellent workability as a result of having good solvent solubility, and being capable of forming a cured product having excellent heat resistance. The curable compound according to an embodiment of the present invention includes the following characteristics (a) to (e). (a) Number average molecular weight (calibrated with polystyrene standard): 1000 to 15000. (b) Proportion of a structure derived from an aromatic ring in the total amount of the curable compound: 50 wt. % or greater. (c) Solvent solubility at 25? C.: 1 g/100 g or greater. (d) Glass transition temperature: 280? C. or lower. (e) 5% Weight loss temperature (T.sub.d5) measured at a rate of temperature increase of 10? C./min (in nitrogen), for a cured product of the curable compound: 300? C. or higher.
METHOD FOR THE PREPARATION OF A COATING COMPRISING OLIGOMERIC ALKYNES
The invention relates to a method for the preparation of a coating comprising at least one coating layer on a substrate, the method comprising the steps of a. providing monomers of the type R(N).sub.x-(L).sub.m-(CC).sub.n-(L).sub.o-(N).sub.yR, wherein R is a head moiety, R is a tail moiety, (CC).sub.n is an oligoyne moiety, L and L are linker moieties, N and N independently are branched or unbranched optionally substituted C.sub.1-C.sub.25 alkyl moieties optionally containing 1 to 5 heteroatoms, x, m, o, and y are independently 0 or 1, n is 4 to 12, and wherein the head moiety allows for an interaction with the surface of the substrate; b. bringing the monomers into contact with the substrate wherein the interaction of the head moieties of the monomers with the surface of the substrate induces at least a part of the monomers to align in a defined manner thereby forming a film on the surface and bringing the oligoyne moieties of the monomers into close contact with each other; c. inducing a reaction between oligoyne moieties by providing an external stimulus so as to at least partially cross-link the aligned monomers, thereby forming a coating layer on the substrate. The invention further relates to a coating obtainable according to the method of the invention, the use of a coating obtainable according to the method of the invention, a substrate comprising a coating obtainable according to the invention and the use of solid substrate. The invention further relates to a method for the synthesis of the monomers according to the invention.
METHOD FOR THE PREPARATION OF A COATING COMPRISING OLIGOMERIC ALKYNES
The invention relates to a method for the preparation of a coating comprising at least one coating layer on a substrate, the method comprising the steps of a. providing monomers of the type R(N).sub.x-(L).sub.m-(CC).sub.n-(L).sub.o-(N).sub.yR, wherein R is a head moiety, R is a tail moiety, (CC).sub.n is an oligoyne moiety, L and L are linker moieties, N and N independently are branched or unbranched optionally substituted C.sub.1-C.sub.25 alkyl moieties optionally containing 1 to 5 heteroatoms, x, m, o, and y are independently 0 or 1, n is 4 to 12, and wherein the head moiety allows for an interaction with the surface of the substrate; b. bringing the monomers into contact with the substrate wherein the interaction of the head moieties of the monomers with the surface of the substrate induces at least a part of the monomers to align in a defined manner thereby forming a film on the surface and bringing the oligoyne moieties of the monomers into close contact with each other; c. inducing a reaction between oligoyne moieties by providing an external stimulus so as to at least partially cross-link the aligned monomers, thereby forming a coating layer on the substrate. The invention further relates to a coating obtainable according to the method of the invention, the use of a coating obtainable according to the method of the invention, a substrate comprising a coating obtainable according to the invention and the use of solid substrate. The invention further relates to a method for the synthesis of the monomers according to the invention.
Polymer for preparing resist underlayer film, resist underlayer film composition containing the polymer and method for manufacturing semiconductor device using the composition
Provided are a polymer used for a manufacturing process of a semiconductor and a display, a resist underlayer film composition containing the polymer for a manufacturing process of a semiconductor and a display, and a method for manufacturing semiconductor device using the composition, and more specifically, the polymer of the present disclosure simultaneously has optimized etching selectivity, planarization characteristic, and excellent thermal resistance, such that the resist underlayer film composition containing the polymer is usable as a hard mask for a multilayer semiconductor lithography process.
Polymer for preparing resist underlayer film, resist underlayer film composition containing the polymer and method for manufacturing semiconductor device using the composition
Provided are a polymer used for a manufacturing process of a semiconductor and a display, a resist underlayer film composition containing the polymer for a manufacturing process of a semiconductor and a display, and a method for manufacturing semiconductor device using the composition, and more specifically, the polymer of the present disclosure simultaneously has optimized etching selectivity, planarization characteristic, and excellent thermal resistance, such that the resist underlayer film composition containing the polymer is usable as a hard mask for a multilayer semiconductor lithography process.
HYDROCHROMIC POLYDIACETYLENE COMPOSITE COMPOSITION, HYDROCHROMIC THIN FILM USING SAME, AND USE THEREOF
The present invention relates to a hydrochromic polydiacetylene composite composition, a hydrochromic thin film using same, and a use thereof, and more specifically, to a hydrochromic polydiacetylene composite composition reacting sensitively to moisture, providing the hydrochromic thin film using same, and to applying same to biorecognition or fingerprint recognition. According to the present invention, moisture secreted from a fingerprint or pores on the skin can be detected with high sensitivity. Thus, the position of pores unique to a fingerprint of an organism can be amplified and displayed through selective color change and fluorescent change patterns exhibited when moisture is absorbed.