Methods of preparing phthalonitrile coating compositions are provided, including phthalonitrile sprays, phthalonitrile pastes, and phthalonitrile composite films. In embodiments, such a method comprises, heating a phthalonitrile precursor composition comprising a bisphthalonitrile compound to a temperature and for a period of time to form a phthalonitrile prepolymer composition comprising a bisphthalonitrile prepolymer; cooling the phthalonitrile prepolymer composition to ambient temperature and pulverizing the phthalonitrile prepolymer composition to form particles; combining the particles with a liquid medium to form a phthalonitrile solution; optionally, adding an additive to the phthalonitrile solution; and mixing the phthalonitrile solution to form a phthalonitrile coating composition.

Methods of preparing phthalonitrile coating compositions are provided, including phthalonitrile sprays, phthalonitrile pastes, and phthalonitrile composite films. In embodiments, such a method comprises, heating a phthalonitrile precursor composition comprising a bisphthalonitrile compound to a temperature and for a period of time to form a phthalonitrile prepolymer composition comprising a bisphthalonitrile prepolymer; cooling the phthalonitrile prepolymer composition to ambient temperature and pulverizing the phthalonitrile prepolymer composition to form particles; combining the particles with a liquid medium to form a phthalonitrile solution; optionally, adding an additive to the phthalonitrile solution; and mixing the phthalonitrile solution to form a phthalonitrile coating composition.

The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

The present invention provides a composition for forming an organic film, containing a polymer compound having one or more of repeating units shown by the general formulae (1) to (4) and an organic solvent containing one or more compounds selected from propylene glycol esters, ketones, and lactones, with a total concentration of more than 30 wt % with respect to the whole organic solvent. There can be provided a composition capable of forming an organic film that can be easily removed, together with a silicon residue modified by dry etching, in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

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The present invention provides a composition for forming an organic film, containing a polymer compound having one or more of repeating units shown by the general formulae (1) to (4) and an organic solvent containing one or more compounds selected from propylene glycol esters, ketones, and lactones, with a total concentration of more than 30 wt % with respect to the whole organic solvent. There can be provided a composition capable of forming an organic film that can be easily removed, together with a silicon residue modified by dry etching, in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

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An anti-reflective hardmask composition is provided. In an exemplary embodiment, the anti-reflective hardmask composition includes (a) a carbazole derivative polymer represented by the following Formula 1 or a polymer blend comprising the carbazole derivative polymer, and (b) an organic solvent: ##STR00001##

An anti-reflective hardmask composition is provided. In an exemplary embodiment, the anti-reflective hardmask composition includes (a) a carbazole derivative polymer represented by the following Formula 1 or a polymer blend comprising the carbazole derivative polymer, and (b) an organic solvent: ##STR00001##

[Problem] To obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. [Means for Solution] The present invention is a substrate cleaning solution comprising an insoluble or hardly soluble solute (A), a soluble solute (B), and a solvent (C).

[Problem] To obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. [Means for Solution] The present invention is a substrate cleaning solution comprising an insoluble or hardly soluble solute (A), a soluble solute (B), and a solvent (C).