In one instance a semicrystalline polyketone powder useful for additive manufacturing is comprised of a bimodal melt peak determined by an initial differential scanning calorimetry (DSC) scan at 20 C./min and a D.sub.90 particle size of at most 300 micrometers and average particle size of 1 micrometer to 150 micrometers equivalent spherical diameter. In another instance, A composition is comprised of a semicrystalline polyketone powder having a melt peak and a recrystallization peak, wherein the melt peak and recrystallization peak fail to overlap.

In one instance a semicrystalline polyketone powder useful for additive manufacturing is comprised of a bimodal melt peak determined by an initial differential scanning calorimetry (DSC) scan at 20 C./min and a D.sub.90 particle size of at most 300 micrometers and average particle size of 1 micrometer to 150 micrometers equivalent spherical diameter. In another instance, A composition is comprised of a semicrystalline polyketone powder having a melt peak and a recrystallization peak, wherein the melt peak and recrystallization peak fail to overlap.

Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition. ##STR00001## In the above Chemical Formula 1, A.sup.1 to A.sup.3, X.sup.1 to X.sup.3, L.sup.1, L.sup.2, n and m are the same as described in the detailed description.

Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition. ##STR00001## In the above Chemical Formula 1, A.sup.1 to A.sup.3, X.sup.1 to X.sup.3, L.sup.1, L.sup.2, n and m are the same as described in the detailed description.

In one instance a semicrystalline polyketone powder useful for additive manufacturing is comprised of a bimodal melt peak determined by an initial differential scanning calorimetry (DSC) scan at 20 C./min and a D.sub.90 particle size of at most 300 micrometers and average particle size of 1 micrometer to 150 micrometers equivalent spherical diameter. In another instance, A composition is comprised of a semicrystalline polyketone powder having a melt peak and a recrystallization peak, wherein the melt peak and recrystallization peak fail to overlap.

In one instance a semicrystalline polyketone powder useful for additive manufacturing is comprised of a bimodal melt peak determined by an initial differential scanning calorimetry (DSC) scan at 20 C./min and a D.sub.90 particle size of at most 300 micrometers and average particle size of 1 micrometer to 150 micrometers equivalent spherical diameter. In another instance, A composition is comprised of a semicrystalline polyketone powder having a melt peak and a recrystallization peak, wherein the melt peak and recrystallization peak fail to overlap.

In one instance a semicrystalline polyketone powder useful for additive manufacturing is comprised of a bimodal melt peak determined by an initial differential scanning calorimetry (DSC) scan at 20 C./min and a D.sub.90 particle size of at most 300 micrometers and average particle size of 1 micrometer to 150 micrometers equivalent spherical diameter. In another instance, A composition is comprised of a semicrystalline polyketone powder having a melt peak and a recrystallization peak, wherein the melt peak and recrystallization peak fail to overlap.

In one instance a semicrystalline polyketone powder useful for additive manufacturing is comprised of a bimodal melt peak determined by an initial differential scanning calorimetry (DSC) scan at 20 C./min and a D.sub.90 particle size of at most 300 micrometers and average particle size of 1 micrometer to 150 micrometers equivalent spherical diameter. In another instance, A composition is comprised of a semicrystalline polyketone powder having a melt peak and a recrystallization peak, wherein the melt peak and recrystallization peak fail to overlap.

A resist composition including a hypervalent iodine compound represented by formula (1), a carboxy group-containing compound, and a solvent. In formula (1), n represents an integer of 0 to 4 when m is 0, an integer of 0 to 6 when m is 1, and an integer of 0 to 8 when m is 2; R.sup.1, R.sup.2, and R.sup.3 represent a halogen atom or a hydrocarbyl group having 1 to 10 carbon atoms; R.sup.4 represents a halogen atom or a hydrocarbyl group having 1 to 40 carbon atoms; R.sup.5 represents a carbonyl group or a hydrocarbylene group having 1 to 10 carbon atom; and I and R.sup.5 are bonded to adjacent carbon atoms of aromatic ring. This can provide: a resist composition that exhibits excellent sensitivity and resolution in photolithography using a high-energy beam, particularly in electron beam (EB) lithography and EUV lithography; and a patterning process using resist composition.

##STR00001##

A resist composition including a hypervalent iodine compound represented by formula (1), a carboxy group-containing compound, and a solvent. In formula (1), n represents an integer of 0 to 4 when m is 0, an integer of 0 to 6 when m is 1, and an integer of 0 to 8 when m is 2; R.sup.1, R.sup.2, and R.sup.3 represent a halogen atom or a hydrocarbyl group having 1 to 10 carbon atoms; R.sup.4 represents a halogen atom or a hydrocarbyl group having 1 to 40 carbon atoms; R.sup.5 represents a carbonyl group or a hydrocarbylene group having 1 to 10 carbon atom; and I and R.sup.5 are bonded to adjacent carbon atoms of aromatic ring. This can provide: a resist composition that exhibits excellent sensitivity and resolution in photolithography using a high-energy beam, particularly in electron beam (EB) lithography and EUV lithography; and a patterning process using resist composition.

##STR00001##