Smoothness of glass is improved. A polishing slurry (A) contains amorphous carbon and water, and a total amount of the amorphous carbon and the water is equal to or more than 90% of the whole polishing slurry in terms of mass ratio.

A polishing slurry including a composite including a hydrophilic fullerene and an ionic compound, a method of manufacturing the same, and a method of manufacturing a semiconductor device.

A polishing slurry including a composite including a hydrophilic fullerene and an ionic compound, a method of manufacturing the same, and a method of manufacturing a semiconductor device.

An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below:

##STR00001## wherein: L.sup.1 to L.sup.3 are independently substituted or unsubstituted hydrocarbylene, R.sup.1 to R.sup.4 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, and X.sup.n is an n-valent anion, where n is an integer of 1 to 3.

A chemical mechanical polishing composition for polishing a substrate having a polysilicon layer includes a water based liquid carrier, a silica abrasive, an amino acid or guanidine derivative containing polysilicon polishing accelerator, and an alkali metal salt. The composition includes less than about 500 ppm tetraalkylammonium salt and has a pH in a range from about 10 to about 11.

A process for chemical mechanical polishing a substrate containing cobalt, zirconium oxide, poly-silicon and silicon dioxide, wherein the cobalt, zirconium, and poly-silicon removal rates are selective over silicon dioxide. The chemical mechanical polishing composition includes water, a benzyltrialkyl quaternary ammonium compound, cobalt chelating agent, corrosion inhibitor, colloidal silica abrasive, optionally a biocide and optionally a pH adjusting agent, and a pH greater than 7, and the chemical mechanical polishing compositions are free of oxidizing agents.

A polishing composition comprising an abrasive grain; a modified microfibril cellulose in which at least a part of the cellulose units has a hydroxyl group at the C6 position oxidized to a carboxyl group; and a dispersion medium, wherein each content of Na and K is 100 ppm or less relative to the solids weight.

A polishing composition comprising an abrasive grain; a modified microfibril cellulose in which at least a part of the cellulose units has a hydroxyl group at the C6 position oxidized to a carboxyl group; and a dispersion medium, wherein each content of Na and K is 100 ppm or less relative to the solids weight.

A composition comprises, consists of, or consists essentially of a polymer including a derivatized amino acid monomer unit. A chemical mechanical polishing composition includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, and a cationic polymer having a derivatized amino acid monomer unit. A method of chemical mechanical polishing includes utilizing the chemical mechanical polishing composition to remove at least a portion of a metal or dielectric layer from a substrate and thereby polish the substrate.

Methods for polishing dielectric layers using an auto-stop slurry in forming semiconductor devices, such as three-dimensional (3D) memory devices, are provided. The methods include forming a stack structure in a staircase region and a core array region, the stack structure including a staircase structure in the staircase region; forming a dielectric layer over the staircase region and a peripheral region outside the stack structure; and polishing the dielectric layer using an auto-stop slurry containing a ceria-based abrasive.