A method for selective etching Si in the presence of silicon nitride and an etching composition with high Si/Si3N4 etching selectivity are disclosed. Particularly, the method for selective etching Si in the presence of silicon nitride is to apply the etching composition with high Si/Si3N4 etching selectivity in the etching process, and the etching composition with high Si/Si3N4 etching selectivity comprises about 0.5 wt. % to about 10 wt. % of at least one quaternary ammonium compound, about 5 wt. % to about 55 wt. % of at least one primary amine, about 15 wt. % to about 80 wt. % of at least one polyol, and about 10 wt. % to about 35 wt. % water based on total weight of the etching composition.

A method for selective etching Si in the presence of silicon nitride and an etching composition with high Si/Si3N4 etching selectivity are disclosed. Particularly, the method for selective etching Si in the presence of silicon nitride is to apply the etching composition with high Si/Si3N4 etching selectivity in the etching process, and the etching composition with high Si/Si3N4 etching selectivity comprises about 0.5 wt. % to about 10 wt. % of at least one quaternary ammonium compound, about 5 wt. % to about 55 wt. % of at least one primary amine, about 15 wt. % to about 80 wt. % of at least one polyol, and about 10 wt. % to about 35 wt. % water based on total weight of the etching composition.

A dry etching method including reacting silicon oxide with: gaseous hydrogen fluoride and a gaseous organic amine compound; a hydrogen fluoride salt of a gaseous organic amine compound; or gaseous hydrogen fluoride, a gaseous organic amine compound, and a hydrogen fluoride salt of a gaseous organic amine compound. The organic amine compound is an organic amine mixture containing at least two compounds represented by the following formula (1):

R.sup.1—N═R.sup.2R.sup.3  (1)

wherein N is a nitrogen atom; R.sup.1 is a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; R.sup.2 and R.sup.3 are each a hydrogen atom or a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; provided that the hydrocarbon group, when it has a carbon number of 3 or more, may have a branched chain structure or a ring structure.

Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6.

##STR00001##

Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6.

##STR00001##

Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a triazine derivative of the general formula (I) wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5 and R.sup.6 are independently from each other H, methyl, ethyl, propyl, butyl, pentyl, C.sub.2-C.sub.10-alkylcarboxylic acid, hydroxymethyl, vinyl or allyl (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

##STR00001##

Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a triazine derivative of the general formula (I) wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5 and R.sup.6 are independently from each other H, methyl, ethyl, propyl, butyl, pentyl, C.sub.2-C.sub.10-alkylcarboxylic acid, hydroxymethyl, vinyl or allyl (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

##STR00001##

The present invention is a plasma etching method comprising subjecting a silicon-containing film to plasma etching using a process gas, the process gas comprising a linear saturated fluorohydrocarbon compound represented by a formula (1), and a gaseous fluorine-containing compound (excluding the compound represented by the formula (1)) that functions as a fluorine radical source under plasma etching conditions, wherein x represents 3 or 4, y represents an integer from 5 to 9, and z represents an integer from 1 to 3. The present invention provides a plasma etching method that can selectively etch the silicon-containing film with respect to the mask, and form a hole or a trench having a good shape within a short time.

CxHyF.sub.z  (1)

The present invention is a plasma etching method comprising subjecting a silicon-containing film to plasma etching using a process gas, the process gas comprising a linear saturated fluorohydrocarbon compound represented by a formula (1), and a gaseous fluorine-containing compound (excluding the compound represented by the formula (1)) that functions as a fluorine radical source under plasma etching conditions, wherein x represents 3 or 4, y represents an integer from 5 to 9, and z represents an integer from 1 to 3. The present invention provides a plasma etching method that can selectively etch the silicon-containing film with respect to the mask, and form a hole or a trench having a good shape within a short time.

CxHyF.sub.z  (1)

Shielding coatings are applied to polymer substrates for selective metallization of the substrates. The shielding coatings include a primer component and a hydrophobic top coat. The primer is first applied to the polymer substrate followed by application of the top coat component. The shielding coating is then selectively etched to form an outline of a desired current pattern. A catalyst is applied to the patterned polymer substrate followed by electroless metal plating in the etched portions. The portions of the polymer substrate which contain the shielding coating inhibit electroless metal plating. The primers contain five-membered heterocyclic nitrogen compounds and the top coat contains hydrophobic alky organic compounds.