A copper alloy has a composition including: 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, an average crystal grain size is in a range of 10 μm or more and 100 μm or less, an electrical conductivity is 90% IACS or more, and a residual stress rate is 50% or more at 150° C. after 1000 hours.

A copper alloy has a composition including: 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, an average crystal grain size is in a range of 10 μm or more and 100 μm or less, an electrical conductivity is 90% IACS or more, and a residual stress rate is 50% or more at 150° C. after 1000 hours.

The present invention relates to a composite material and a heat dissipation part composed of the composite material, wherein particles composed of a material having excellent thermal conductivity properties, such as diamond or silicon carbide (SiC), are composited in a metal matrix to implement excellent thermal conductivity, and at the same time, to control a thermal expansion coefficient to be in a desired range, and particularly, even if high heat is applied, the thermal conductivity is hardly degraded.

The present invention relates to a composite material and a heat dissipation part composed of the composite material, wherein particles composed of a material having excellent thermal conductivity properties, such as diamond or silicon carbide (SiC), are composited in a metal matrix to implement excellent thermal conductivity, and at the same time, to control a thermal expansion coefficient to be in a desired range, and particularly, even if high heat is applied, the thermal conductivity is hardly degraded.

A conductor material includes a metal matrix, and a first carbon allotrope distributed within the metal matrix, the first carbon allotrope being aligned with a direction of electric current flow through a length of the metal matrix. The metal matrix and the first carbon allotrope have an electrical interfacial coherency.

A conductor material includes a metal matrix, and a first carbon allotrope distributed within the metal matrix, the first carbon allotrope being aligned with a direction of electric current flow through a length of the metal matrix. The metal matrix and the first carbon allotrope have an electrical interfacial coherency.

A terminal material having a base material in which at least a surface is made of Cu or Cu alloy; an Ni layer with at thickness of 0.1 μm to 1.0 μm inclusive on the base material; a Cu—Sn intermetallic compound layer with a thickness of 0.2 μm to 2.5 μm inclusive on the Ni layer; and an Sn layer with a thickness of 0.5 μm to 3.0 μm inclusive on the Cu—Sn intermetallic compound layer, when cross sections of the Cu—Sn intermetallic compound layer and the Sn layer are analyzed by the EBSD method with a measuring step 0.1 μm and a boundary in which misorientation between adjacent pixels is 2° or more is deemed to be a crystal boundary, an average crystal grain size Dc of the Cu—Sn intermetallic compound layer is 0.5 μm or more, and a grain size ratio Ds/Dc is five or less.

An electrically conductive tip member includes: an inner periphery portion including a Cu matrix phase and a second phase that is dispersed in the Cu matrix phase and contains a Cu—Zr-based compound, the inner periphery portion having an alloy composition of Cu-xZr (where x is the atomic percentage of Zr and satisfies 0.5≤x≤16.7); and an outer periphery portion that is present on an outer circumferential side of the inner periphery portion, made of a metal containing Cu, and has higher electrical conductivity than the inner periphery portion.

An electrically conductive tip member includes: an inner periphery portion including a Cu matrix phase and a second phase that is dispersed in the Cu matrix phase and contains a Cu—Zr-based compound, the inner periphery portion having an alloy composition of Cu-xZr (where x is the atomic percentage of Zr and satisfies 0.5≤x≤16.7); and an outer periphery portion that is present on an outer circumferential side of the inner periphery portion, made of a metal containing Cu, and has higher electrical conductivity than the inner periphery portion.

A mounting structure is used, which includes: a semiconductor element including an element electrode; a metal member; and a sintered body configured to bond the semiconductor element and the metal member is used, in which the sintered body contains a first metal and a second metal solid-dissolved in the first metal, the second metal is a metal having a diffusion coefficient in the first metal larger than a self-diffusion coefficient of the first metal, and a content ratio of the second metal relative to a total mass of the first metal and the second metal in the sintered body is equal to or lower than a solid solution limit of the second metal to the first metal.