C22C22/00

Templating layers for perpendicularly magnetized Heusler films

Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (that is preferably Al; or Al alloyed with Ga, Ge, Sn or combinations thereof). The composition of this structure is represented by Co.sub.1-xE.sub.x, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing an optional pinning layer between the first magnetic layer and the tunnel barrier.

Templating layers for perpendicularly magnetized Heusler films

Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (that is preferably Al; or Al alloyed with Ga, Ge, Sn or combinations thereof). The composition of this structure is represented by Co.sub.1-xE.sub.x, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing an optional pinning layer between the first magnetic layer and the tunnel barrier.

METHOD OF PRODUCING MAGNETIC MATERIAL
20190252098 · 2019-08-15 · ·

A method of producing a magnetic material of compound having magnetocaloric effect is disclosed. The method may include producing a product by reacting a raw material that is to constitute the magnetic material in melt including an alkali metal; and removing the alkali metal after the product is cooled.

High entropy alloy having TWIP/TRIP property and manufacturing method for the same

The present invention relates to a high entropy alloy having more improved mechanical properties by controlling contents of additive elements in a NiCoFeMnCr 5-element alloy to control stacking fault energy, thereby controlling stability of a austenite phase to control a transformation mechanism, wherein the stacking fault energy is controlled in a composition range of Ni.sub.aCo.sub.bFe.sub.cMn.sub.dCr.sub.e (a+b+c+d+e=100, 1a50, 1b50, 1c50, 1d50, 10e25, and 77a42b22c+73d100e+21861500), and thus, the austenite phase exhibits a twin-induced plasticity (TWIP) property or a transformation induced-plasticity (TRIP) property in which the austenite phase is subjected to phase transformation into an martensite phase or an martensite phase, under stress, thereby having improved strength and elongation at the same time to have excellent mechanical properties.

High entropy alloy having TWIP/TRIP property and manufacturing method for the same

The present invention relates to a high entropy alloy having more improved mechanical properties by controlling contents of additive elements in a NiCoFeMnCr 5-element alloy to control stacking fault energy, thereby controlling stability of a austenite phase to control a transformation mechanism, wherein the stacking fault energy is controlled in a composition range of Ni.sub.aCo.sub.bFe.sub.cMn.sub.dCr.sub.e (a+b+c+d+e=100, 1a50, 1b50, 1c50, 1d50, 10e25, and 77a42b22c+73d100e+21861500), and thus, the austenite phase exhibits a twin-induced plasticity (TWIP) property or a transformation induced-plasticity (TRIP) property in which the austenite phase is subjected to phase transformation into an martensite phase or an martensite phase, under stress, thereby having improved strength and elongation at the same time to have excellent mechanical properties.

Film deposition using precursors containing amidoimine ligands

Methods are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising an amidoimino-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a co-reagent.

Film deposition using precursors containing amidoimine ligands

Methods are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising an amidoimino-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a co-reagent.

ELECTRODEPOSITION IN IONIC LIQUID ELECTROLYTES

An article comprising an electrodeposited aluminum alloy is described herein. The electrodeposited aluminum alloy comprises an average grain size less than approximately 1 micrometer. The electrodeposited aluminum alloy thickness is greater than approximately 40 micrometers. A ductility of the electrodeposited aluminum alloy is greater than approximately 2%.

ELECTRODEPOSITION IN IONIC LIQUID ELECTROLYTES

An article comprising an electrodeposited aluminum alloy is described herein. The electrodeposited aluminum alloy comprises an average grain size less than approximately 1 micrometer. The electrodeposited aluminum alloy thickness is greater than approximately 40 micrometers. A ductility of the electrodeposited aluminum alloy is greater than approximately 2%.

Thixotropically Molded Product And Thixotropic Molding Material

A thixotropically molded product includes: a matrix portion containing Mg as a main component; and carbon fibers dispersed in the matrix portion. An area fraction of the carbon fibers in a cross section is 1.0% or more and 30.0% or less. An average fiber length of the carbon fibers may be 15 ?m or more and 150 ?m or less.