The disclosure pertains to a radiation source, such as an active insert, typically containing porous or microporous iridium or compounds, alloys or composites thereof within an encapsulation, and methods of manufacture thereof. The porosity or microporosity or low-density alloying ingredient with iridium causes a reduced density of the iridium within the active insert to be achieved.

The disclosure pertains to a radiation source, such as an active insert, typically containing porous or microporous iridium or compounds, alloys or composites thereof within an encapsulation, and methods of manufacture thereof. The porosity or microporosity or low-density alloying ingredient with iridium causes a reduced density of the iridium within the active insert to be achieved.

Methods are provided for synthesizing high purity niobium or rhenium powders by a combustion reaction. The methods can include: forming a combustion synthesis solution by dissolving in water an oxidizer, a fuel, and at least one base-soluble, ammonium salt of niobium or rhenium in amounts that yield a stoichiometric burn when combusted; and heating the combustion synthesis solution to a temperature sufficient to substantially remove the water and to initiate a self-sustaining combustion reaction.

Methods are provided for synthesizing high purity niobium or rhenium powders by a combustion reaction. The methods can include: forming a combustion synthesis solution by dissolving in water an oxidizer, a fuel, and at least one base-soluble, ammonium salt of niobium or rhenium in amounts that yield a stoichiometric burn when combusted; and heating the combustion synthesis solution to a temperature sufficient to substantially remove the water and to initiate a self-sustaining combustion reaction.

A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium (Er), ytterbium (Yb), promethium (Pm), neodymium (Nd cobalt (Co), cerium (Ce), lanthanum (La), praseodymium (Pr), or combinations thereof.

A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium (Er), ytterbium (Yb), promethium (Pm), neodymium (Nd cobalt (Co), cerium (Ce), lanthanum (La), praseodymium (Pr), or combinations thereof.

The present invention provides a high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity and a preparation method thereof. The general formula of the high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity is Zr.sub.xHf.sub.1-xNi.sub.yPd.sub.1-ySn, where x is equal to 0.6 to 0.8, and y is equal to 0.8 to 0.9. The preparation method of the high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity comprises the following steps: preparing and mixing materials according to the general formula of Zr.sub.0.7Hf.sub.0.3Ni.sub.0.85Pd.sub.0.15Sn, putting the mixed raw materials in a levitation melting for melting, grinding the obtained ingot into powder and drying it, and sintering the powder by using spark plasma sintering into a bulk high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity. The high-entropy Half-Heusler thermoelectric material of the present invention has a relatively low lattice thermal conductivity and a relatively high ZT value.

A graded multilayered composite comprises a metal matrix material having a first side and a second side opposite the first side. A first layer of microspheres is dispersed on the first side of the metal matrix material. A second layer of microspheres is dispersed on the second side of the metal matrix material.

A thin-walled metal part, and a method to fabricate such a part out of various alloys. A plurality of layers are formed, each of the layers being formed on a polymer template or on a previously formed layer. A homogenizing heat treatment is used to cause chemical elements in the layers to interdiffuse, to form a single continuous layer with a substantially uniform alloy composition.

A metal alloy and includes an enhancement coating material.