A surface treatment method includes: contacting a substrate with a treatment material, the substrate comprising a metallic element, the treatment material comprising an alkaline earth metal element, an alkali metal element, or any combination thereof; and forming on the substrate a surface layer comprising a first oxide of the alkaline earth metal element, the alkali metal element, or any combination thereof and a second oxide of the metallic element. A device has: a substrate layer comprising a metallic element; and a surface layer comprising a first oxide of an alkaline earth metal element, an alkali metal element, or any combination thereof, and a second oxide of the metallic element.

Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

A metallic thermal barrier coating for a component includes an insulating layer having a plurality of metallic microspheres applied to a substrate. A second metallic non-permeable layer is bonded to the insulating layer such that the sealing layer seals against the insulating layer. A method for applying a thermal barrier coating to a component includes placing an insulating layer having a plurality of microspheres to a surface of the substrate of the component. A heat treatment is applied to the insulating layer. A second non-permeable layer is bonded to and seals against the insulating layer.

Certain aspects of the invention provides a transient liquid phase (TLP) bonding structure, including Ni based alloys and a TLP bonded layer formed by pack cementation on the Ni based alloys using a pack composition. In one embodiment, the pack composition includes 57 wt. % of aluminum oxide powder, 30 wt. % of Ti powder, 10 wt. % of Ni-50 wt. % Al alloy powder and 3 wt. % of ammonium chloride powder. The Ni based alloys may be Ni-20 wt. % Cr alloys. In certain embodiments, pack cementation is performed on the Ni based alloys under argon for an hour using the pack composition to form a coating. Then the structure is sonicated in acetone for 2 hours, and then annealed under vacuum at about 1200 C. for 2 days to form the TLP bonding structure, which has a uniform phase distribution with identical compositions and properties at its bonding regions.

A plating method for plating a layer of material onto a part using friction burnishing is provided. The method includes moving the part at a predetermined speed. The method further includes bringing the material into contact with the moving part at a predetermined pressure. The method further includes forming a plating layer of the material on a surface of the part by maintaining the material in contact with the moving part for a predetermined time period. Alternatively, the method includes forming at least one lobed plating layer of the material on the moving part by maintaining the material in contact with the moving part and switching between a first predetermined pressure and a second predetermined pressure.

An object of the disclosure is to provide a heat generation element having high durability and a method of manufacturing the same. A heat generation element 1 according to the disclosure includes a first layer 2 having a metallic tantalum phase, and a second layer 3 which covers a periphery of the first layer 2 and has a tantalum carbide phase, wherein a concentration of silicon in an interface portion 4 between the first layer 2 and the second layer 3 is higher than a concentration of silicon in a portion other than the interface portion 4.

A centralizer for a tubular body in a wellbore is provided herein. The centralizer includes an elongated body having a bore there through. The bore is dimensioned to receive a tubular body. The elongated body has an inner surface and an outer surface. The centralizer has a first coating deposited on at least the inner surface. The centralizer also has a second coating deposited on at least the inner surface. The coatings are designed to provide a reduced coefficient of friction on the surface. A method of fabricating a centralizer is also provided herein.

A centralizer for a tubular body in a wellbore is provided herein. The centralizer includes an elongated body having a bore there through. The bore is dimensioned to receive a tubular body. The elongated body has an inner surface and an outer surface. The centralizer has a first coating deposited on at least the inner surface. The centralizer also has a second coating deposited on at least the inner surface. The coatings are designed to provide a reduced coefficient of friction on the surface. A method of fabricating a centralizer is also provided herein.

Transition metal dichalcogenide (TMDC) films and methods for conformally depositing TMDC films on a substrate surface are described. The substrate surface may have one or more features formed therein, one or more layers formed thereon, and combinations thereof. The substrate surface is exposed to a transition metal precursor and an oxidant to form a transition metal oxide film in a first phase. The transition metal oxide film is exposed to a chalcogenide precursor to convert the transition metal oxide film to the TMDC film in a second phase.