Patent classifications
C23C14/00
Methods of making extensible barrier films
There is provided a method of making a curved barrier film, including: depositing a barrier layer between a first organic layer and a second organic layer to form a barrier film; and thermoforming or vacuum-forming the barrier film from a flat barrier film to a curved barrier film; wherein the barrier film includes the barrier layer having two opposing major surfaces, wherein the barrier layer includes buckling deformations and non-buckling regions; the first organic layer in direct contact with one of the opposing major surfaces of the barrier layer; and the second organic layer in direct contact with the other of the opposing major surfaces of the barrier layer.
Coloring pattern structure and method of manufacturing the same
Provided is a coloring pattern structure. The coloring pattern structure includes: a substrate; a light-transmitting dielectric layer formed on at least one surface of the substrate; and a composite material layer disposed on an upper surface of the light-transmitting dielectric layer and formed of a metal and a first material not having a thermodynamic solid solubility in the metal, wherein the metal included in the composite material layer has a pattern coated only on portions of the upper surface of the light-transmitting dielectric layer, and the first material is coated on the remaining area where the metal is not coated.
OPTICAL FILTER AND METHOD FOR MANUFACTURING SAME
Provided is an optical filter capable of reducing the dependency on the angle of light incidence. An optical filter 1 includes a hydrogenated silicon-containing film 4, wherein in a Raman spectrum of the hydrogenated silicon-containing film 4 measured by Raman spectroscopy a ratio (SiH/SiH.sub.2) obtained from a ratio between an area of a peak derived from SiH and an area of a peak derived from SiH.sub.2 is 0.7 or more.
FILM FORMING APPARATUS AND METHOD FOR REDUCING ARCING
Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber, the first gas injector having a movable gas outlet.
Catalyst laminate, membrane electrode assembly, electrochemical cell, stack, water electrolyzer, and hydrogen utilizing system
A catalyst laminate includes a plurality of catalyst layers containing at least one of a noble metal and an oxide of the noble metal and at least one of a non-noble metal and an oxide of the non-noble metal, including: two or more first catalyst layers and two or more second catalyst layers. In an atomic percent of the noble metal obtained by using a line analysis by energy dispersive X-ray spectroscopy in a thickness direction of the catalyst laminate. The first catalyst layer is less than an average of a highest value and a lowest value of the atomic percent of the noble metal. The second catalyst layer has an atomic percent of the noble metal equal to or greater than the average of the highest value and the lowest value thereof. The second catalyst layer is present between the first catalyst layers.
Material deposition systems, and related methods
A material deposition system comprises a dopant source containing at least one dopant precursor material, an inert gas source containing at least one noble gas, and a physical vapor deposition apparatus in selective fluid communication with the dopant source and the inert gas source. The physical vapor deposition apparatus comprises a housing structure, a target electrode, and a substrate holder. The housing structure is configured and positioned to receive at least one feed fluid stream comprising the at least one dopant precursor material and the at least one noble gas. The target electrode is within the housing structure and is in electrical communication with a signal generator. The substrate holder is within the housing structure and is spaced apart from the target electrode. A method of forming a microelectronic device, a microelectronic device, a memory device, and an electronic system are also described.
DECORATIVE ARTICLES HAVING A CHANGEABLE OBSERVED COLOUR EFFECT
A decorative article (100) having an observed colour effect that is changeable depending on observer (200) viewing angle, the article comprising: a decorative element (110) comprising a front side (114) facing a forward direction and a back side (112) opposite the front side facing a rearward direction, wherein the back side comprises a back surface (113) having a first region (122) and a second region (124) surrounding the first region; a first coating (132) arranged on the first region of the back surface, the first coating causing a first colour effect (102); and a second coating (134) arranged on the second region of the back surface, the second coating causing a second colour effect (104) that differs from the first colour effect.
Laminate and method for producing laminate
A laminate including a glass plate and a coating layer, wherein the coating layer includes one or more components selected from the group consisting of silicon nitride, titanium oxide, alumina, niobium oxide, zirconia, indium tin oxide, silicon oxide, magnesium fluoride, and calcium fluoride, wherein a ratio (dc/dg) of a thickness dc of the coating layer to a thickness dg of the glass plate is in a range of 0.05×10.sup.−3 to 1.2×10.sup.−3, and wherein a radius of curvature r1 of the laminate with negating of self-weight deflection is 10 m to 150 m.
Film formation apparatus and film formation method
According to one embodiment, film formation apparatus includes: a carrying unit that includes a rotation table which circulates and carries a workpiece; a film formation process unit which includes a target formed of a silicon material, and a plasma producer that produces plasma of a sputter gas introduced between the target and the rotation table, and which forms a silicon film on the workpiece by sputtering; and a hydrogenation process unit which includes a process gas introducing unit that introduces a process gas containing a hydrogen gas, and a plasma producer that produces plasma of the process gas, and which performs hydrogenation on the silicon film formed on the workpiece. The carrying unit carries the workpiece so as to alternately pass through the film formation process unit and through the hydrogenation process unit.
Methods for forming films on substrates
Methods and systems for forming films on substrates in semiconductor processes are disclosed. The method includes providing different materials each contained in separate ampoules. Material is flowed from each ampoule into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.