Patent classifications
C23C16/00
Vapor phase growth method
A vapor phase growth method is disclosed. The method includes a step of preparing a substrate in a chamber, a first step of absorbing only a first element to the substrate by supplying a first source material into the chamber, a second step of suspending supply of the first source material into the chamber, a third step of absorbing a second element to the substrate by supplying a second source material into the chamber, wherein the supply of the second source material is started while the first source material remains in an atmosphere of the chamber, a fourth step of suspending supply of the second source material into the chamber, and a fifth step of repeating from the first step to the fourth step.
MICROLATTICE DAMPING MATERIAL AND METHOD FOR REPEATABLE ENERGY ABSORPTION
Described is a micro-lattice damping material and a method for repeatable energy absorption. The micro-lattice damping material is a cellular material formed of a three-dimensional interconnected network of hollow tubes. This material is operable to provide high damping, specifically acoustic, vibration or shock damping, by utilizing the energy absorption mechanism of hollow tube buckling, which is rendered repeatable by the micro-lattice architecture.
Apparatus and method for depositing multiple coating materials in a common plasma coating zone
An apparatus and method for coating a substrate moved along a path of travel through the apparatus. A plasma source issues a plasma jet into which a first reagent is injected from a discharge orifice located upstream of the jet. A second reagent is injected into the jet from a discharge orifice located downstream of the jet. A controller is configured to regulate the flow of the first reagent according to a first set of parameters and regulate the flow of the second reagent according to a second set of parameters. As a result, the first and second reagents are applied to the substrate to form at least one layer of a coating on the substrate.
Liner assemblies for substrate processing systems
A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.
Microwave surface-wave plasma device
A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.
Decorative article having black hard coating film
Provided is a decorative article including a black hard coating film which is excellently inhibited from suffering a deterioration of appearance quality such as a scratch due to use thereof, and which has excellent decorativeness. The decorative article according to the present invention is a decorative article including: a base; and a black hard coating film which is formed on the base, and which includes diamond-like carbon, wherein the hydrogen content of a surface, reverse to a surface closer to the base, of the black hard coating film is more than the hydrogen content of the surface, closer to the base, of the black hard coating film; and the hydrogen content of the surface, reverse to the surface closer to the base, of the black hard coating film is 30.0 to 75.0 atm %.
Combination CVD/ALD method, source and pulse profile modification
The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor feed is controlled in order to provide an optimal pulse profile. This may be accomplished by splitting the feed into two paths. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. Additionally, the pulse profile of each pulse can be modified. The pulse profile can be modified to create a low or very low partial pressure pulse profile at the beginning of a pulse.
Method of forming process film
A method of forming a process film includes the following operations. A substrate is transferred into a process chamber having an interior surface. A process film is formed over the substrate, and the process film is also formed on the interior surface of the process chamber. The substrate is transferred out of the process chamber. A non-process film is formed on the interior surface of the process chamber. In some embodiments, porosity of the process film is greater than a porosity of the non-process film.
Method of forming process film
A method of forming a process film includes the following operations. A substrate is transferred into a process chamber having an interior surface. A process film is formed over the substrate, and the process film is also formed on the interior surface of the process chamber. The substrate is transferred out of the process chamber. A non-process film is formed on the interior surface of the process chamber. In some embodiments, porosity of the process film is greater than a porosity of the non-process film.
Device and method for manufacturing nanostructures consisting of carbon
A device for manufacturing nanostructures consisting of carbon, such as monolayers, multilayer sheet structures, tubes, or fibers includes a gas inlet element having a housing cavity enclosed by housing walls, into which a gas feed line opens, through which a gaseous, in particular carbonaceous starting material can be fed into the housing cavity, having a plasma generator, which has components arranged at least partially in the housing cavity, which has at least one plasma electrode to which electrical voltage can be applied, to apply energy to the gaseous starting material by igniting a plasma and thus converting the gaseous starting material into a gaseous intermediate product, and having a gas outlet surface having a plurality of gas outlet openings, through which the gaseous intermediate product can exit out of the housing cavity. A gas heating unit is provided for assisting the conversion, which is arranged downstream of the components.