An object of the present invention is to provide a method for producing active material composite particles having a dense coating layer. In the present invention, the above object is achieved by providing a method for producing an active material composite particle, the method comprising steps of: a coating step of coating a surface of an active material with a precursor solution of a Li ion conductive oxide to form a precursor layer; a heat treatment step of performing heat treatment on the precursor layer to form a coating layer comprising the Li ion conductive oxide; and a compression shearing treatment step of performing compression shearing treatment on the coating layer.

An object of the present invention is to provide a method for producing active material composite particles having a dense coating layer. In the present invention, the above object is achieved by providing a method for producing an active material composite particle, the method comprising steps of: a coating step of coating a surface of an active material with a precursor solution of a Li ion conductive oxide to form a precursor layer; a heat treatment step of performing heat treatment on the precursor layer to form a coating layer comprising the Li ion conductive oxide; and a compression shearing treatment step of performing compression shearing treatment on the coating layer.

Methods and devices for patterning electroless metals on a substrate are presented. An active catalyst layer on the substrate can be covered with a patterned mask and treated with a deactivating chemical reagent, which deactivates the catalyst layer not covered by the mask. Once the patterned mask is removed, the electroless metal layer can be placed to have a patterned electroless metals. Alternatively, a substrate can be coated with a blocking reagent in a pattern first to inhibit formation of the catalyst layer before a catalyst layer can be placed over the blocking agent layer and then electroless metal layer is placed on the catalyst layer. The pattern of the blocking reagent acts as a negative pattern of the final conductive line pattern.

Methods and devices for patterning electroless metals on a substrate are presented. An active catalyst layer on the substrate can be covered with a patterned mask and treated with a deactivating chemical reagent, which deactivates the catalyst layer not covered by the mask. Once the patterned mask is removed, the electroless metal layer can be placed to have a patterned electroless metals. Alternatively, a substrate can be coated with a blocking reagent in a pattern first to inhibit formation of the catalyst layer before a catalyst layer can be placed over the blocking agent layer and then electroless metal layer is placed on the catalyst layer. The pattern of the blocking reagent acts as a negative pattern of the final conductive line pattern.

A fabrication method for fabricating a magnetic film provided body includes preparing a base body and forming a magnetic film on the base body. The magnetic film includes organic film(s) and ferrite film(s) alternately layered. The formation of the magnetic film alternately includes forming a ferrite film through a ferrite plating method, the ferrite film having a thickness of 20 m or less and forming an organic film having a thickness of 0.1 m to 20 m, both inclusive, and a ratio t/E of 0.025 m/GPa or more, where t indicates the thickness of the organic film while E indicates Young's modulus of the organic film.

A method, which forms an air-bubble-free thin film with a high-viscosity fluid resin, initially dispenses the fluid resin on an outer region of a semiconductor wafer while the semiconductor wafer is spinning, and then dispenses the fluid resin onto the center of the semiconductor wafer after the semiconductor wafer has stopped spinning.

A method, which forms an air-bubble-free thin film with a high-viscosity fluid resin, initially dispenses the fluid resin on an outer region of a semiconductor wafer while the semiconductor wafer is spinning, and then dispenses the fluid resin onto the center of the semiconductor wafer after the semiconductor wafer has stopped spinning.

A plating method includes: providing a work piece which is metal or non-metal; forming a printed layer on a predetermined region of a surface of the work piece through printing electrical conductive material on the predetermined region; forming a plated layer through plating the printed layer and the surface of the work piece.

A plating method includes: providing a work piece which is metal or non-metal; forming a printed layer on a predetermined region of a surface of the work piece through printing electrical conductive material on the predetermined region; forming a plated layer through plating the printed layer and the surface of the work piece.

The growth of a specific crystal plane of a polycrystalline metal is induced or suppressed by forming a carbon material on the surface of the polycrystalline metal, and accordingly, the ratio of the crystal plane may be controlled, particularly, the crystal plane may be controlled so as for the polycrystalline metal to be similar to a single crystalline metal. Accordingly, a metal-carbon material composite where a crystal plane is controlled may be mass-produced at low costs through a continuous process.