Disclosed is a method for etching a first region including a multi-layer film formed by providing silicon oxide films and silicon nitride films alternately, and a second region having a single silicon oxide film. The etching method includes: providing a processing target object including a mask provided on the first region and the second region within a processing container of a plasma processing apparatus; generating plasma of a first processing gas including a hydrofluorocarbon gas within the processing container that accommodates the processing target object; and generating plasma of a second processing gas including a fluorocarbon gas within the processing container that accommodates the processing target object. The step of generating the plasma of the first processing gas and the step of generating the plasma of the second processing gas are alternately repeated.

One illustrative method disclosed herein includes, among other things, forming a fin-removal masking layer comprised of a plurality of line-type features, each of which is positioned above one of the fins, and a masking material positioned at least between adjacent features of the fin-removal masking layer and above portions of an insulating material in the trenches between the fins. The method also includes performing an anisotropic etching process through the fin-removal masking layer to remove the portions of the fins to be removed.

A method for manufacturing a ruthenium wiring including (i) treating a metal surface including ruthenium using a first chemical solution including a compound having a functional group capable of coordinating to a ruthenium atom, and (ii) carrying out an etching treatment on the metal surface including ruthenium treated with the first chemical solution, using a second chemical solution.

This invention relates to a method of manufacturing an object with microchannels provides therethrough, and more particularly, but not exclusively, to a method of manufacturing a micro heat exchanger with microchannels provided therethrough. The method includes the steps of providing a metal base layer made from a first metal; forming a plurality of spaced apart ridges, made from a second metal, on the base layer; depositing more of the first metal onto the ridges in order to cover the ridges; and re moving the ridges using a chemical etching process so as to produce microchannels in a body made of the first metal.

This invention relates to a method of manufacturing an object with microchannels provides therethrough, and more particularly, but not exclusively, to a method of manufacturing a micro heat exchanger with microchannels provided therethrough. The method includes the steps of providing a metal base layer made from a first metal; forming a plurality of spaced apart ridges, made from a second metal, on the base layer; depositing more of the first metal onto the ridges in order to cover the ridges; and re moving the ridges using a chemical etching process so as to produce microchannels in a body made of the first metal.

Provided are a heat-absorbing material having high heat resistance and high wavelength selectivity, and a process for producing the same. The heat-absorbing material includes: a heat-resistant metal having the substantially same periodic structure in the light incidence plane as the wavelength of sunlight having a specific wavelength in the wavelength regions of visible light and near-infrared rays; and a cermet formed on the light incidence plane of the heat-resistant metal. Thus, there can be achieved desirable absorption and radiation characteristics being such that absorption is performed in the visible light region meanwhile reflection is performed in the infrared region. Furthermore, the cermet does not need complicated film-formation control, and therefore, the high heat resistance can be maintained.

Provided are a heat-absorbing material having high heat resistance and high wavelength selectivity, and a process for producing the same. The heat-absorbing material includes: a heat-resistant metal having the substantially same periodic structure in the light incidence plane as the wavelength of sunlight having a specific wavelength in the wavelength regions of visible light and near-infrared rays; and a cermet formed on the light incidence plane of the heat-resistant metal. Thus, there can be achieved desirable absorption and radiation characteristics being such that absorption is performed in the visible light region meanwhile reflection is performed in the infrared region. Furthermore, the cermet does not need complicated film-formation control, and therefore, the high heat resistance can be maintained.

A method etching a glass material comprises providing an etchant comprising 10-30% HF, 5-15% HNO.sub.3,and at least 10% H.sub.3PO.sub.4 by volume constituted such that the ratio HF:HNO.sub.3 by volume is in the range of 1.7:1 to 2.3:1, providing a glass material to be etched, and contacting the glass material with the etchant. The etchant desirably has no other acid components. The method may be performed with the etchant temperature within the range of 20-30° C. The glass material may be an aluminosilicate glass. Ultrasound energy may be applied to the etchant, to the glass material, or both.

Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

The present invention provides an etching apparatus suitable for etching polysilicon on a substrate or bulk silicon constituting the substrate. The present invention relates to an etching apparatus including a gas-flow adjusting means that allows etching gas to flow from a periphery of a substrate to substantially a center of the substrate, and relates to a technology capable of etching polysilicon or bulk silicon at a uniform thickness on an entire substrate surface. In addition, the gas-flow adjusting means is installed in a vertically movable manner, and an etching speed can be controlled by an adjustment of the gas-flow adjusting means.