At least one embodiment relates to a method for transforming at least part of a valve metal layer into a template that includes a plurality of spaced channels aligned longitudinally along a first direction. The method includes a first anodization step that includes anodizing the valve metal layer in a thickness direction to form a porous layer that includes a plurality of channels. Each channel has channel walls and a channel bottom. The channel bottom is coated with a first insulating metal oxide barrier layer as a result of the first anodization step. The method also includes a protective treatment. Further, the method includes a second anodization step after the protective treatment. The second anodization step substantially removes the first insulating metal oxide barrier layer, induces anodization, and creates a second insulating metal oxide barrier layer. In addition, the method includes an etching step.

A method includes additively manufacturing an article in an inert environment, removing the article from the inert environment and placing the article in a non-inert environment, allowing at least a portion the article to oxidize in the non-inert environment to form an oxidized layer on a surface of the article, and removing the oxidized layer (e.g., to smooth the surface of the article). The method can further include relieving stress in the article (e.g., via heating the article after additive manufacturing).

A method includes additively manufacturing an article in an inert environment, removing the article from the inert environment and placing the article in a non-inert environment, allowing at least a portion the article to oxidize in the non-inert environment to form an oxidized layer on a surface of the article, and removing the oxidized layer (e.g., to smooth the surface of the article). The method can further include relieving stress in the article (e.g., via heating the article after additive manufacturing).

A mask assembly for thin film deposition and a method of manufacturing the same. The mask assembly includes a glass mask having a first surface and a second surface opposite the first surface, a first metal layer patterned above the first surface of the glass mask, and a second metal layer patterned below the second surface of the glass mask. A plurality of deposition areas are arranged on the glass mask, and a plurality of deposition pattern portions each having a plurality of slits are patterned in the plurality of deposition areas.

A mask assembly for thin film deposition and a method of manufacturing the same. The mask assembly includes a glass mask having a first surface and a second surface opposite the first surface, a first metal layer patterned above the first surface of the glass mask, and a second metal layer patterned below the second surface of the glass mask. A plurality of deposition areas are arranged on the glass mask, and a plurality of deposition pattern portions each having a plurality of slits are patterned in the plurality of deposition areas.

A magnesium alloy composite structure includes a magnesium alloy substrate, a zinc layer applied to the magnesium alloy substrate, a copper layer applied to the zinc layer, a nickel strike layer applied to the copper layer; an autocatalytic nickel layer applied to the nickel strike layer and a surface layer applied to the autocatalytic nickel layer. Various surface layers include Aluminum Titanium Nitride, Boron Nitride, Chromium Nitride, Titanium Nitride, Zirconium Nitride, Zirconium Oxide, Zirconium Oxycarbide, Titanium Carbide, Titanium Nitride and Diamond Like Carbon.

Embodiments of the present invention generally relate to apparatus for reducing arcing and parasitic plasma in substrate processing chambers. The apparatus generally include a processing chamber having a substrate support, a backing plate, and a showerhead disposed therein. A showerhead suspension electrically couples the backing plate to the showerhead. An electrically conductive bracket is coupled to the backing plate and spaced apart from the showerhead. The electrically conductive bracket may include a plate, a lower portion, an upper portion, and a vertical extension. The electrically conductive bracket contacts an electrical isolator.

Provided are a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment system configured for single substrate processing. The method comprises placing the substrate into the etch processing chamber, the substrate containing the masking layer and a layer of silicon or silicon oxide, obtaining a supply of steam water vapor mixture at elevated pressure, obtaining a supply of treatment liquid for selectively etching the masking layer over the silicon or silicon oxide at a selectivity ratio, combining the treatment liquid and the steam water vapor mixture, and injecting the combined treatment liquid and the steam water vapor mixture into the etch processing chamber. The flow of the combined treatment liquid and the steam water vapor mixture is controlled to maintain a target etch rate and a target etch selectivity ratio of the masking layer to the layer of silicon or silicon oxide.

A method for 3D printing includes printing a first metallic material on a substrate as a support structure (48). A second metallic material, which is less anodic than the first metallic material, is printed on the substrate as a target structure (46), in contact with the support structure. The support structure is chemically removed from the target structure by applying a galvanic effect to selectively corrode the first metallic material.

A method for 3D printing includes printing a first metallic material on a substrate as a support structure (48). A second metallic material, which is less anodic than the first metallic material, is printed on the substrate as a target structure (46), in contact with the support structure. The support structure is chemically removed from the target structure by applying a galvanic effect to selectively corrode the first metallic material.