A method for manufacturing a ruthenium wiring including (i) treating a metal surface including ruthenium using a first chemical solution including a compound having a functional group capable of coordinating to a ruthenium atom, and (ii) carrying out an etching treatment on the metal surface including ruthenium treated with the first chemical solution, using a second chemical solution.

A method for manufacturing a ruthenium wiring including (i) treating a metal surface including ruthenium using a first chemical solution including a compound having a functional group capable of coordinating to a ruthenium atom, and (ii) carrying out an etching treatment on the metal surface including ruthenium treated with the first chemical solution, using a second chemical solution.

A vacuum trap, a plasma etch system using the vacuum trap and a method of cleaning the vacuum trap. The vacuum trap includes a baffle housing; and a removable baffle assembly disposed in the baffle housing, the baffle assembly comprising a set of baffle plates, the baffle plates spaced along a support rod from a first baffle plate to a last baffle plate, the baffle plates alternately disposed above and below the support rod and alternately disposed in an upper region and a lower region of the baffle housing.

A vacuum trap, a plasma etch system using the vacuum trap and a method of cleaning the vacuum trap. The vacuum trap includes a baffle housing; and a removable baffle assembly disposed in the baffle housing, the baffle assembly comprising a set of baffle plates, the baffle plates spaced along a support rod from a first baffle plate to a last baffle plate, the baffle plates alternately disposed above and below the support rod and alternately disposed in an upper region and a lower region of the baffle housing.

According to one embodiment, a method of manufacturing a transparent conductor is provided. In the method, a silver nanowire layer including a plurality of silver nanowires and having openings is formed on a graphene film supported by a copper support. Then, a transparent resin layer insoluble in a copper-etching solution is formed on the silver nanowire layer such that the transparent resin layer contacts the graphene film through the openings. The copper support is then brought into contact with the non-acidic copper-etching solution to remove the copper support, thereby exposing the graphene film.

According to one embodiment, a method of manufacturing a transparent conductor is provided. In the method, a silver nanowire layer including a plurality of silver nanowires and having openings is formed on a graphene film supported by a copper support. Then, a transparent resin layer insoluble in a copper-etching solution is formed on the silver nanowire layer such that the transparent resin layer contacts the graphene film through the openings. The copper support is then brought into contact with the non-acidic copper-etching solution to remove the copper support, thereby exposing the graphene film.

A method for making a conductive film includes the steps of: depositing a conductive metal film on a substrate to form a metal-coated substrate; depositing a fiber pattern on the conductive metal film of the metal-coated substrate to form a masked substrate, the fiber pattern defining protected metal and exposed metal of the conductive metal film; removing the exposed metal from the conductive metal film of the masked substrate to form a protected conductive film; and removing the fiber pattern from the protected conductive film to expose the protected metal and provide a metal pattern on the substrate. An annealing step con be employed after depositing the fiber pattern to increase the surface area of contact between the fiber pattern and the conductive metal film.

A method for making a conductive film includes the steps of: depositing a conductive metal film on a substrate to form a metal-coated substrate; depositing a fiber pattern on the conductive metal film of the metal-coated substrate to form a masked substrate, the fiber pattern defining protected metal and exposed metal of the conductive metal film; removing the exposed metal from the conductive metal film of the masked substrate to form a protected conductive film; and removing the fiber pattern from the protected conductive film to expose the protected metal and provide a metal pattern on the substrate. An annealing step con be employed after depositing the fiber pattern to increase the surface area of contact between the fiber pattern and the conductive metal film.

A method for forming a cutting tool includes masking a metal base with one or more masks, the one or more masks including at least one variable permeability mask, and chemically etching the masked metal base to form a blade of the cutting tool.

A surface chemical treatment apparatus provided with: a first conduit having an opening at one end and communicating with a liquid supply means at the other end; a second conduit having at one end an opening that surrounds the opening of the first conduit and communicating with a liquid suction means at the other end; and a moving mechanism for moving the openings of the first and second conduits relative to the solid phase surface, so as to make a surface chemical treatment possible in a fine pattern by allowing the patterning solution to be dispensed through the opening of the first conduit while allowing the solution to be suctioned up together with the surrounding liquid phase or gas phase medium through the opening of the second conduit that surrounds the opening of the first conduit and, thus, preventing seepage of the solution in all directions.