A surface chemical treatment apparatus provided with: a first conduit having an opening at one end and communicating with a liquid supply means at the other end; a second conduit having at one end an opening that surrounds the opening of the first conduit and communicating with a liquid suction means at the other end; and a moving mechanism for moving the openings of the first and second conduits relative to the solid phase surface, so as to make a surface chemical treatment possible in a fine pattern by allowing the patterning solution to be dispensed through the opening of the first conduit while allowing the solution to be suctioned up together with the surrounding liquid phase or gas phase medium through the opening of the second conduit that surrounds the opening of the first conduit and, thus, preventing seepage of the solution in all directions.

Systems and methods for etching complex patterns on an interior surface of a hollow object are disclosed. A method generally includes positioning a laser system within the hollow object with a focal point of the laser focused on the interior surface, and operating the laser system to form the complex pattern on the interior surface. Motion of the laser system and the hollow object is controlled by a motion control system configured to provide rotation and/or translation about a longitudinal axis of one or both of the hollow object and the laser system based on the complex pattern, and change a positional relationship between a reflector and a focusing lens of the laser system to accommodate a change in distance between the reflector and the interior surface of the hollow object.

Systems and methods for etching complex patterns on an interior surface of a hollow object are disclosed. A method generally includes positioning a laser system within the hollow object with a focal point of the laser focused on the interior surface, and operating the laser system to form the complex pattern on the interior surface. Motion of the laser system and the hollow object is controlled by a motion control system configured to provide rotation and/or translation about a longitudinal axis of one or both of the hollow object and the laser system based on the complex pattern, and change a positional relationship between a reflector and a focusing lens of the laser system to accommodate a change in distance between the reflector and the interior surface of the hollow object.

A touch panel is manufactured by a method that decreases undesirable reflections of external light while improving the visibility of emitted light. The touch panel includes a base layer including an active region responsive to an external touch to generate an electronic signal and a peripheral region adjacent to the active region, and a first conductive pattern disposed on the active region and a second conductive pattern disposed on the peripheral region, each of the first conductive pattern and the second conductive pattern including a conductive layer having an external light reflectivity and a darkening layer disposed over the conductive layer. External light reflectivity of each of the first and second conductive patterns is lower than that of the conductive layer.

Microfluidic devices having superhydrophilic bi-porous interfaces are provided, along with their methods of formation. The device can include a substrate defining a microchannel formed between a pair of side walls and a bottom surface and a plurality of nanowires extending from each of the side walls and the bottom surface. For example, the nanowires can be silicon nanowires (e.g., pure silicon, silicon oxide, silicon carbide, etc., or mixtures thereof).

In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

In a film-forming apparatus according to an aspect, a substrate placed on a substrate placing region passes through a first region and a second region in this order by rotation of a placing table. A precursor gas is supplied to the first region. Plasma of a reaction gas is generated in the second region by a plasma generation section. The plasma generation section includes an antenna that supplies microwaves as a plasma source. The antenna includes a dielectric window member and a waveguide. The window member is provided above the second region. The waveguide defines a waveguide path that extends in a radial direction. The waveguide is formed with a plurality of slot holes that allow the microwaves to pass therethrough from the waveguide path toward the window member plate. A bottom surface of the window member defines a groove that extends in the radial direction.

The object of the present invention is to provide a metal plate capable of manufacturing a deposition mask in which dispersion of positions of through-holes is restrained. A thermal recovery rate is defined as parts per million of a difference a distance between to measurement points on a sample before a heat treatment and a distance therebetween after the heat treatment, relative to the distance therebetween before the heat treatment. In this case, an average value of the thermal recovery rates of the respective samples is not less than −10 ppm and not more than +10 ppm, and (2) a dispersion of the thermal recovery rates of the respective samples is not more than 20 ppm.

The object of the present invention is to provide a metal plate capable of manufacturing a deposition mask in which dispersion of positions of through-holes is restrained. A thermal recovery rate is defined as parts per million of a difference a distance between to measurement points on a sample before a heat treatment and a distance therebetween after the heat treatment, relative to the distance therebetween before the heat treatment. In this case, an average value of the thermal recovery rates of the respective samples is not less than −10 ppm and not more than +10 ppm, and (2) a dispersion of the thermal recovery rates of the respective samples is not more than 20 ppm.

A substrate processing apparatus includes an electrostatic chuck that includes a chuck electrode and electrostatically attracts a substrate; a direct voltage source that is connected to the chuck electrode and applies a voltage to the chuck electrode; and an evacuation unit that includes a rotor and discharges, via a heat transfer gas discharge pipe, a heat transfer gas supplied to a back surface of the substrate electrostatically-attracted by the electrostatic chuck. The evacuation unit is connected via a power supply line to the direct voltage source, generates regenerative power, and supplies the regenerative power to the direct voltage source.