Embodiments provide a polishing composition for a magnetic disk substrate, the polishing composition containing colloidal silica, at least one of a phosphorus-containing inorganic acid and a phosphorous-containing organic acid, and water. According to at least one embodiment, the colloidal silica in the polishing composition has an average particle diameter (D50) in the range of 5 to 50 nm observed by a transmission electron microscope. In measuring a volume-based particle size distribution of the colloidal silica by dynamic light scattering, when the particle size distribution is measured by adjusting a concentration of colloidal silica particles to be 0.25 mass %, the colloidal silica contains 10 vol % or less of colloidal silica particles larger than 50 nm. The polishing composition has 1 to 50 mass % of the colloidal silica, and the pH (25° C.) in the range of 0.1 to 4.0. The colloidal silica is stabilized by sodium or ammonium.

A CMP slurry composition for copper films and a method of polishing a copper film using the same are disclosed, the composition including a polar solvent or a non-polar solvent; and polishing particles modified with a silicon-containing compound, wherein the silicon-containing compound is represented by Formula 1,

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A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a first low-k removal rate inhibitor; a second low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor. This disclosure also relates to a method of polishing a substrate that comprises cobalt using the polishing compositions described herein.

A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a first low-k removal rate inhibitor; a second low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor. This disclosure also relates to a method of polishing a substrate that comprises cobalt using the polishing compositions described herein.

Provided herein are methods and compositions for chemical mechanical polishing (CMP) of metals. The present methods and compositions involve the use of a corrosion inhibitor having the general formula C.sub.mH.sub.2m+1(OCH.sub.2CH.sub.2).sub.n-L-R in the CMP slurry composition, where m is an integer between 6 and 11, inclusive of end points, and n is an integer greater than or equal to 6, L is a bond, O, S, R.sup.1, SR.sup.1, or OR.sup.1, where R.sup.1 is a C.sub.1-4 alkylene; and R is an anionic group. The present methods and compositions can be used to achieve a high metal removal rate, while effectively inhibiting metal corrosion during CMP, and are particularly useful for CMP of cobalt (Co).

Provided herein are methods and compositions for chemical mechanical polishing (CMP) of metals. The present methods and compositions involve the use of a corrosion inhibitor having the general formula C.sub.mH.sub.2m+1(OCH.sub.2CH.sub.2).sub.n-L-R in the CMP slurry composition, where m is an integer between 6 and 11, inclusive of end points, and n is an integer greater than or equal to 6, L is a bond, O, S, R.sup.1, SR.sup.1, or OR.sup.1, where R.sup.1 is a C.sub.1-4 alkylene; and R is an anionic group. The present methods and compositions can be used to achieve a high metal removal rate, while effectively inhibiting metal corrosion during CMP, and are particularly useful for CMP of cobalt (Co).

An etchant is described that includes an N-heterocyclic carbene and optionally an appropriate solvent. The etchant was effective at etching a metallic surface having, for example, a metal oxide and/or metal, in both solution phase and vapour-phase. The etchant has been shown to effectively etch oxidized copper and tungsten.

Methods, systems, and devices for memory arrays that use a conductive hard mask during formation and, in some cases, operation are described. A hard mask may be used to define features or components during the numerous material formation and removal steps used to create memory cells within a memory array. The hard mask may be an electrically conductive material, some or all of which may be retained during formation. A conductive line may be connected to each memory cell, and because the hard mask used in forming the cell may be conductive, the cell may be operable even if portions of the hard mask remain after formation.

Methods, systems, and devices for memory arrays that use a conductive hard mask during formation and, in some cases, operation are described. A hard mask may be used to define features or components during the numerous material formation and removal steps used to create memory cells within a memory array. The hard mask may be an electrically conductive material, some or all of which may be retained during formation. A conductive line may be connected to each memory cell, and because the hard mask used in forming the cell may be conductive, the cell may be operable even if portions of the hard mask remain after formation.

Representative implementations of techniques, methods, and formulary provide repairs to processed semiconductor substrates, and associated devices, due to erosion or dishing of a surface of the substrates. The substrate surface is etched until a preselected portion of one or more embedded interconnect devices protrudes above the surface of the substrate. The interconnect devices are wet etched with a selective etchant, according to a formulary, for a preselected period of time or until the interconnect devices have a preselected height relative to the surface of the substrate. The formulary includes one or more oxidizing agents, one or more organic acids, and glycerol, where the one or more oxidizing agents and the one or more organic acids are each less than 2% of formulary and the glycerol is less than 10% of the formulary.