Representative implementations of techniques, methods, and formulary provide repairs to processed semiconductor substrates, and associated devices, due to erosion or dishing of a surface of the substrates. The substrate surface is etched until a preselected portion of one or more embedded interconnect devices protrudes above the surface of the substrate. The interconnect devices are wet etched with a selective etchant, according to a formulary, for a preselected period of time or until the interconnect devices have a preselected height relative to the surface of the substrate. The formulary includes one or more oxidizing agents, one or more organic acids, and glycerol, where the one or more oxidizing agents and the one or more organic acids are each less than 2% of formulary and the glycerol is less than 10% of the formulary.

Provided are a composition for semiconductor surface treatment capable of effectively diminishing or removing contaminations from a semiconductor surface and suppressing damage to a metal wiring material and the like when being used in treatments such as polishing and cleaning and a treatment method of a semiconductor surface using the composition. The composition for semiconductor surface treatment according to an embodiment of the disclosure contains (A) a compound represented by the following Formula (1) and (B) a compound represented by the following Formula (2):

R.sup.1L.sup.1R.sup.2 (1)

(in Formula (1), R.sup.1 represents a linear or branched alkyl group having 6 to 18 carbon atoms, R.sup.2 represents an organic group having 2 or more and 5 or less nitrogen atoms, and L.sup.1 represents a single bond or a divalent linking group)

##STR00001##

(in Formula (2), R.sup.11 represents an organic group having 1 to 12 carbon atoms).

Representative implementations of techniques, methods, and formulary provide repairs to processed semiconductor substrates, and associated devices, due to erosion or dishing of a surface of the substrates. The substrate surface is etched until a preselected portion of one or more embedded interconnect devices protrudes above the surface of the substrate. The interconnect devices are wet etched with a selective etchant, according to a formulary, for a preselected period of time or until the interconnect devices have a preselected height relative to the surface of the substrate. The formulary includes one or more oxidizing agents, one or more organic acids, and glycerol, where the one or more oxidizing agents and the one or more organic acids are each less than 2% of formulary and the glycerol is less than 10% of the formulary.

Representative implementations of techniques, methods, and formulary provide repairs to processed semiconductor substrates, and associated devices, due to erosion or dishing of a surface of the substrates. The substrate surface is etched until a preselected portion of one or more embedded interconnect devices protrudes above the surface of the substrate. The interconnect devices are wet etched with a selective etchant, according to a formulary, for a preselected period of time or until the interconnect devices have a preselected height relative to the surface of the substrate. The formulary includes one or more oxidizing agents, one or more organic acids, and glycerol, where the one or more oxidizing agents and the one or more organic acids are each less than 2% of formulary and the glycerol is less than 10% of the formulary.

Provided is a polishing composition in which a polishing speed of silicon germanium is sufficiently high and a selection ratio of the polishing speed of silicon germanium is sufficiently high. A polishing composition includes: abrasive grains; an inorganic salt; and an oxidizing agent, in which the number of silanol groups per unit surface area of the abrasive grains is more than 0/nm.sup.2 and 2.0/nm.sup.2 or less, and a pH of the polishing composition is 6.0 or more.

Provided is a polishing composition in which a polishing speed of silicon germanium is sufficiently high and a selection ratio of the polishing speed of silicon germanium is sufficiently high. A polishing composition includes: abrasive grains; an inorganic salt; and an oxidizing agent, in which the number of silanol groups per unit surface area of the abrasive grains is more than 0/nm.sup.2 and 2.0/nm.sup.2 or less, and a pH of the polishing composition is 6.0 or more.

A method for controlling a surface glossiness of a metal workpiece includes: providing a metal workpiece; detecting the surface glossiness of the metal workpiece to obtain a first detection value; and, treating the metal workpiece by different processes according to different first detection values so that the surface glossiness of the metal workpiece satisfies the production requirements.

A method for controlling a surface glossiness of a metal workpiece includes: providing a metal workpiece; detecting the surface glossiness of the metal workpiece to obtain a first detection value; and, treating the metal workpiece by different processes according to different first detection values so that the surface glossiness of the metal workpiece satisfies the production requirements.

A composition for polishing silicon nitride according to the present invention includes colloidal silica, a polishing aid including a phosphoric acid compound and a sulfuric acid compound. By further including an oxidizing agent, a first selectivity representing the ratio of a polishing speed for a metal layer to a polishing speed for a silicon nitride layer and a second selectivity representing the ratio of a polishing speed for an oxide insulating layer to a polishing speed for a silicon nitride are controlled.

A composition for polishing silicon nitride according to the present invention includes colloidal silica, a polishing aid including a phosphoric acid compound and a sulfuric acid compound. By further including an oxidizing agent, a first selectivity representing the ratio of a polishing speed for a metal layer to a polishing speed for a silicon nitride layer and a second selectivity representing the ratio of a polishing speed for an oxide insulating layer to a polishing speed for a silicon nitride are controlled.