The hydrophobic and corrosion resistive film of cross-linked poly(hexafluoroisopropyl methacrylate) was prepared by photopolymerization. The starting materials were a monomer of 1,1,1,3,3,3-hexafluoroisopropyl methacrylate, a photoinitiator of hydroxycyclohexyl phenyl ketone, and a cross-linker of poly(ethyleneglycol diacrylate). Photopolymerization was used to start polymerization and to cure the polymer film on an aluminum surface. Drop-casting was used to deposit the fluoropolymer onto an aluminum substrate (AA 3003). The fluoropolymer film has high corrosion protection when measured by potentiodynamic polarization and open circuit potential techniques in an aqueous solution of 3.5% NaCl. Fourier-transform infrared spectroscopy was used to monitor the polymerization process. The dynamic contact angle technique was used to measure the hydrophobicity for the fluorinated polymer coating. Thermal stability of the fluorinated polymer was measured using thermogravimetric analysis. Treatment with strong acid followed by contact angle measurements before and after the treatment confirmed the chemical resistance for the coated aluminum.

A method for producing a semiconductor element and a chemical solution to be used in the method for producing a semiconductor element, the method including dry-etching or chemically-mechanically polishing a ruthenium-containing layer located as an uppermost layer of a substrate; and bringing a surface of the substrate into contact with a chemical solution thereby satisfactorily cleaning and removing a ruthenium residue formed on the surface of the substrate; and a chemical solution to be suitably used in the method for producing a semiconductor element.

A method for increasing the surface roughness of a metal layer, includes depositing on the metal layer a sacrificial layer made of a dielectric material including nitrogen; exposing a surface of the sacrificial layer to an etching plasma so as to create asperities; and etching the metal layer through the sacrificial layer, so as to transfer the asperities of the sacrificial layer into a part at least of the metal layer.

A method for increasing the surface roughness of a layer based on a metal having a catalytic power, includes fixing fluorine or chlorine on the surface of the metal based layer, by exposing the metal based layer to a plasma formed from a reactive gas containing fluorine or chlorine; exposing the surface of the metal based layer to a humid environment to produce an acid, by reaction of hydrogen from the humid environment with the fluorine or the chlorine fixed on the surface of the metal based layer, the acid reacting with the metal to form residues, the whole of the residues forming a pattern on the surface of the metal based layer, and etching the metal based layer through the residues, so as to transfer the pattern into the metal based layer.

Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which a substrate comprising a metal, metal oxide, metal nitride or metal oxynitride layer is contacted with an etch reactant comprising an vapor-phase N-substituted derivative of amine compound. In some embodiments the etch reactant reacts with the substrate surface to form volatile species including metal atoms from the substrate surface. In some embodiments a metal or metal nitride surface is oxidized as part of the ALE cycle. In some embodiments a substrate surface is contacted with a halide as part of the ALE cycle. In some embodiments a substrate surface is contacted with a plasma reactant as part of the ALE cycle.

There is disclosed an electrode array device having an adsorbed porous reaction layer for improved synthesis quality. The array comprises a plurality of electrodes on a substrate, wherein the electrodes are electronically connected to a computer control system. The array has an adsorbed porous reaction layer on the plurality of electrodes, wherein the adsorbed porous reaction layer comprises a chemical species having at least one hydroxyl group. In the preferred embodiment, the reaction layer is sucrose. A method for preparing an electrode array for improved synthesis quality is disclosed. The method comprises a cleaning method and a method of attachment of a reaction layer. The cleaning method comprises a plasma cleaning method and a chemical cleaning method. The reaction layer is attached after cleaning by exposing the microarray to a solution containing the chemical species having at least one hydroxyl group.

There is disclosed an electrode array device having an adsorbed porous reaction layer for improved synthesis quality. The array comprises a plurality of electrodes on a substrate, wherein the electrodes are electronically connected to a computer control system. The array has an adsorbed porous reaction layer on the plurality of electrodes, wherein the adsorbed porous reaction layer comprises a chemical species having at least one hydroxyl group. In the preferred embodiment, the reaction layer is sucrose. A method for preparing an electrode array for improved synthesis quality is disclosed. The method comprises a cleaning method and a method of attachment of a reaction layer. The cleaning method comprises a plasma cleaning method and a chemical cleaning method. The reaction layer is attached after cleaning by exposing the microarray to a solution containing the chemical species having at least one hydroxyl group.

Vapor deposition methods for depositing transition metal dichalcogenide (TMDC) films, such as rhenium sulfide thin films, are provided. In some embodiments TMDC thin films are deposited using a deposition cycle in which a substrate in a reaction space is alternately and sequentially contacted with a vapor phase transition metal precursor, such as a transition metal halide, a reactant comprising a reducing agent, such as NH.sub.3 and a chalcogenide precursor. In some embodiments rhenium sulfide thin films are deposited using a vapor phase rhenium halide precursor, a reducing agent and a sulfur precursor. The deposited TMDC films can be etched by chemical vapor etching using an oxidant such as O.sub.2 as the etching reactant and an inert gas such as N.sub.2 to remove excess etching reactant. The TMDC thin films may find use, for example, as 2D materials.

A plasma processing apparatus configured to perform plasma processing on a conductive workpiece having a flat plate shape includes: a conductive vacuum chamber having a recessed portion which is configured to cause a processing object portion of at least one side of the workpiece having a flat plate shape to be disposed in the recessed portion and a peripheral edge portion which is provided outside the recessed portion to be continuous with the recessed portion; a holding member configured to hold the workpiece to be separated and insulated from the peripheral edge portion; a voltage application unit configured to apply a voltage between the workpiece and the vacuum chamber; and an insulating layer configured to cover a portion of the peripheral edge portion facing the workpiece.

Described are various embodiments of an ion beam delayering system and method, and endpoint monitoring system and method. One embodiment includes a method for monitoring an ion beam de-layering process for an unknown heterogeneously layered sample, the method comprising: grounding the sample to allow an electrical current to flow from the sample, at least in part, as a result of the ion beam de-layering process; milling a currently exposed layer of the sample using the ion beam, resulting in a given measurable electrical current to flow from the sample as said currently exposed layer is milled, wherein said given measurable electrical current is indicative of an exposed surface material composition of said currently exposed layer; detecting a measurable change in said measureable electrical current during said milling as representative of a corresponding exposed surface material composition change; and associating said measurable change with a newly exposed layer of the sample.