Described are various embodiments of an ion beam delayering system and method, and endpoint monitoring system and method. One embodiment includes a method for monitoring an ion beam de-layering process for an unknown heterogeneously layered sample, the method comprising: grounding the sample to allow an electrical current to flow from the sample, at least in part, as a result of the ion beam de-layering process; milling a currently exposed layer of the sample using the ion beam, resulting in a given measurable electrical current to flow from the sample as said currently exposed layer is milled, wherein said given measurable electrical current is indicative of an exposed surface material composition of said currently exposed layer; detecting a measurable change in said measureable electrical current during said milling as representative of a corresponding exposed surface material composition change; and associating said measurable change with a newly exposed layer of the sample.

Exemplary etching methods may include flowing a fluorine-containing precursor and a hydrogen-containing precursor into a remote plasma region of a semiconductor processing chamber. The hydrogen-containing precursor may be flowed at a flow rate of at least 2:1 relative to the flow rate of the fluorine-containing precursor. The methods may include forming a plasma of the fluorine-containing precursor and the hydrogen-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents into a substrate processing region housing a substrate. The substrate may include an exposed region of a tantalum or titanium material and an exposed region of a silicon-containing material or a metal. The methods may include contacting the substrate with the plasma effluents. The methods may include removing the tantalum or titanium material selectively to the silicon-containing material or the metal.

Provided is a hot-dip galvanized steel sheet to be used for home appliances, vehicles, and the like, and having excellent surface appearance and low-temperature bonding brittleness. The hot-dip galvanized steel sheet includes: a base steel sheet; and a hot-dip galvanized layer formed on the base steel sheet. A surface of the base steel sheet has a centerline average roughness (Ra) of 0.3 or more, a roughness skewness (Rsk) of −1 or less, and a roughness kurtosis (Rku) of 6 or more.

A surface-relief structure and techniques for fabricating the surface-relief structure are disclosed. The surface-relief structure includes a substrate, a plurality of ridges on the substrate, and a plurality of grooves each between two adjacent ridges. The plurality of ridges are slanted with respect to the substrate, and include a material having a refractive index at least 2.3. Regions of the substrate at bottoms of the plurality of grooves include at least one of hydrogen or nitrogen at a concentration of at least 10.sup.10/cm.sup.3.

A surface-relief structure and techniques for fabricating the surface-relief structure are disclosed. The surface-relief structure includes a substrate, a plurality of ridges on the substrate, and a plurality of grooves each between two adjacent ridges. The plurality of ridges are slanted with respect to the substrate, and include a material having a refractive index at least 2.3. Regions of the substrate at bottoms of the plurality of grooves include at least one of hydrogen or nitrogen at a concentration of at least 10.sup.10/cm.sup.3.

A semiconductor interconnect structure having a first electrically conductive structure having a plurality of bottom portions; a dielectric capping layer, at least a portion of the dielectric capping layer being in contact with a first bottom portion of the plurality of bottom portions; and a second electrically conductive structure in electrical contact with a second bottom portion of the plurality of bottom portions. A method of forming the interconnect structure is also provided.

A semiconductor interconnect structure having a first electrically conductive structure having a plurality of bottom portions; a dielectric capping layer, at least a portion of the dielectric capping layer being in contact with a first bottom portion of the plurality of bottom portions; and a second electrically conductive structure in electrical contact with a second bottom portion of the plurality of bottom portions. A method of forming the interconnect structure is also provided.

The present disclosure relates to a method for manufacturing a decoration element, the method including depositing a light reflective layer having a structure of two or more islands separated from each other on one surface of a light absorbing layer; and dry etching the light absorbing layer using the island as a mask, wherein a resistance value of the decoration element after the dry etching of the light absorbing layer increases by two times or more compared to before the dry etching of the light absorbing layer.

A surface-relief structure and techniques for fabricating the surface-relief structure are disclosed. The surface-relief structure includes a substrate, a plurality of ridges on the substrate, and a plurality of grooves each between two adjacent ridges. The plurality of ridges are slanted with respect to the substrate, and include a material having a refractive index at least 2.3. Regions of the substrate at bottoms of the plurality of grooves include at least one of hydrogen or nitrogen at a concentration of at least 10.sup.10/cm.sup.3.

A surface-relief structure and techniques for fabricating the surface-relief structure are disclosed. The surface-relief structure includes a substrate, a plurality of ridges on the substrate, and a plurality of grooves each between two adjacent ridges. The plurality of ridges are slanted with respect to the substrate, and include a material having a refractive index at least 2.3. Regions of the substrate at bottoms of the plurality of grooves include at least one of hydrogen or nitrogen at a concentration of at least 10.sup.10/cm.sup.3.