Provided is a technique that allows measuring a film thickness of a substrate in a plating process.

A plating apparatus 1000 includes a plating tank 10, a substrate holder 20, a rotation mechanism 30, a plurality of contact members 50, a coil 60, a current sensor 65, and a film thickness measuring device 70. The plurality of contact members 50 are disposed in a substrate holder and arranged in a circumferential direction of the substrate holder. The plurality of contact members 50 contact an outer peripheral edge of a lower surface of a substrate to supply electricity to the substrate in the plating process. The coil 60 generates a current by an electromagnetic induction due to a magnetic field generated by a current flowing into the contact member, the contact member being rotate together with the substrate holder in the plating process. The current sensor 65 detects the current generated in the coil. The film thickness measuring device 70 measures a film thickness of the substrate based on the current detected by the current sensor in the plating process.

Provided is a technique that ensures suppressed invasion of particles generated at a bearing of a rotation mechanism into a plating tank.

A plating apparatus 1000 includes a labyrinth seal member 50. The labyrinth seal member includes an inner labyrinth seal 53 arranged below a bearing 33 to seal the bearing, an outer labyrinth seal 54 arranged outside in a radial direction of the rotation shaft 32 with respect to the inner labyrinth seal, a delivery port 55configured to supply air to an inner seal space 60 formed inside in the radial direction with respect to the inner labyrinth seal, and a suction port 56 configured to suction air in an outer seal space 65 formed outside in the radial direction with respect to the inner labyrinth seal and inside in the radial direction with respect to the outer labyrinth seat

An electroplating apparatus includes a plating bath and a substrate in a horizontal direction. The electroplating apparatus further includes a plurality of cathodes on first and second sides of the substrate in a first direction on one surface of the substrate, and an anode above the substrate, the anode being spaced apart from the substrate and configured to be movable in the first direction.

An apparatus and method of adjusting a plating solution are described. Suppressor is added to the plating solution until a comparison to reference data of an RDE potential taken at a first time during a constant current experiment indicates a threshold suppressor concentration is present. The amount of suppressor added to reach the threshold suppressor concentration is used to determine suppressor concentration of the solution. Another amount of suppressor is added to a new plating solution so that the new plating solution has a specific suppressor concentration. The RDE potential or slope of RDE potential change of the new plating concentration with the specific suppressor concentration taken at a second time during another constant current experiment is compared with the reference data to determine the leveler concentration. The suppressor and leveler concentrations of the original plating solution are adjusted before a semiconductor substrate is plated.

A plating apparatus includes a workpiece holder, a plating bath, and a clamp ring. The plating bath is underneath the workpiece holder. The clamp ring is connected to the workpiece holder. The clamp ring includes channels communicating an inner surface of the clamp ring and an outer surface of the clamp ring.

One object of the present disclosure is to improve the accuracy of detection of an abnormality of various devices, and/or to advance the timing of detection of an abnormality. There is provided an apparatus for plating a substrate, comprising: an anode placed to be opposed to the substrate; an electric field regulating member placed between the substrate and the anode, provided with an opening, and equipped with an opening adjustment member configured to change a dimension of the opening; a motor configured to drive the opening adjustment member; and a control device configured to obtain an electric current value or a load factor of the motor, to calculate an amount of change in the load factor of the motor per unit time from the obtained electric current value or the obtained load factor of the motor, and to detect an abnormality of the electric field regulating member when it is detected that the amount of change in the load factor of the motor per unit time exceeds a predetermined threshold value.

A method of processing a semiconductor wafer is provided. The method includes introducing the wafer to a main chamber via a loading port, using a transfer mechanism to transfer the wafer to a first wafer processing module in a stack so that the wafer is disposed substantially horizontally in the first wafer processing module with a front face facing upwards, and performing a processing step on the front face of the wafer in the first wafer processing module.

A method for creating a chrome-plated surface having a matte finish that typically includes: controlling a resistance of a current bridge circuit; depositing a first chromium layer on a substrate positioned in a chromium bath, wherein the first chromium layer is deposited by supplying current from a power source that is electrically connected to the substrate and to anodes positioned in the chromium bath; etching the first chromium layer by engaging a current bridge that closes the current bridge circuit; depositing a first intermediate chromium layer, wherein the first intermediate chromium layer is deposited by supplying current from the power source; etching the first intermediate chromium layer, wherein the first intermediate chromium layer is etched by engaging the current bridge; and depositing a final chromium layer, wherein the final chromium layer is deposited by supplying current from the power source.

Provided is a film formation device and a film formation method for a metallic coating that allow forming a metallic coating with a uniform film thickness. The film formation device of the present disclosure includes an anode, a solid electrolyte membrane, a power supply device, a solution container, and a pressure device. The solid electrolyte membrane is disposed between the anode and a substrate that serves as a cathode. The power supply device applies a voltage between the anode and the cathode. The solution container contains a solution between the anode and the solid electrolyte membrane. The solution contains metal ions. The pressure device pressurizes the solid electrolyte membrane to the cathode side with a fluid pressure of the solution. The film formation device further includes a shielding member disposed to surround an outer peripheral surface of the anode. The shielding member shields a line of electric force.

Provided is a film formation device and a film formation method for a metallic coating that allow forming a metallic coating with a uniform film thickness. The film formation device of the present disclosure includes an anode, a solid electrolyte membrane, a power supply device, a solution container, and a pressure device. The solid electrolyte membrane is disposed between the anode and a substrate that serves as a cathode. The power supply device applies a voltage between the anode and the cathode. The solution container contains a solution between the anode and the solid electrolyte membrane. The solution contains metal ions. The pressure device pressurizes the solid electrolyte membrane to the cathode side with a fluid pressure of the solution. The film formation device further includes a shielding member disposed to surround an outer peripheral surface of the anode. The shielding member shields a line of electric force.