A method of applying a protective coating with improved adhesion on an aluminum alloy component includes first pretreating the surface of a component by depositing a sacrificial protective immersion layer using a zincating or similar process. Portions of the protective immersion layer as well as portions of the underlying aluminum alloy substrate are then electrolytically etched off in an ionic liquid. A protective aluminum coating is then electrodeposited on the component in an ionic liquid.

A method of applying a protective coating with improved adhesion on an aluminum alloy component includes first pretreating the surface of a component by depositing a sacrificial protective immersion layer using a zincating or similar process. Portions of the protective immersion layer as well as portions of the underlying aluminum alloy substrate are then electrolytically etched off in an ionic liquid. A protective aluminum coating is then electrodeposited on the component in an ionic liquid.

The invention is a method for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing Co.sup.0. The method mixes 0.1 to 2 wt % hydrogen peroxide oxidizing agent () into a slurry containing 0.5 to 3 wt % colloidal silica particles (), the colloidal silica particles containing primary particles, 0.5 to 2 wt % complexing agent () selected from at least one of L-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-N,N-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-N,N,N,N-tetraacetic acid, and balance water having a pH of 5 to 9 to create a polishing slurry for the semiconductor substrate. Oxidizing at least a surface portion of the Co.sup.0 to Co.sup.+3 of the semiconductor substrate to prevent runaway dissolution of the Co.sup.0 reduces polishing defects in the semiconductor substrate. Polishing the semiconductor substrate with a polishing pad removes the surface portion of the semiconductor substrate oxidized to Co.sup.+3.

A method of manufacturing a mask includes forming a first hole in a base material using a laser, the first hole penetrating through the base material from a first surface to a second surface different than the first surface, and expanding the first hole using an etchant to form a second hole.

A method includes additively manufacturing an article in an inert environment, removing the article from the inert environment and placing the article in a non-inert environment, allowing at least a portion the article to oxidize in the non-inert environment to form an oxidized layer on a surface of the article, and removing the oxidized layer (e.g., to smooth the surface of the article). The method can further include relieving stress in the article (e.g., via heating the article after additive manufacturing).

A method includes additively manufacturing an article in an inert environment, removing the article from the inert environment and placing the article in a non-inert environment, allowing at least a portion the article to oxidize in the non-inert environment to form an oxidized layer on a surface of the article, and removing the oxidized layer (e.g., to smooth the surface of the article). The method can further include relieving stress in the article (e.g., via heating the article after additive manufacturing).

Disclosed is a method for etching graphene using a DNA sample of a predetermined DNA shape. The DNA sample is preferably placed onto a reaction area of a piece of highly oriented pyrolytic graphite (HOPG), and both the DNA sample and HOPG are then preferably placed into a humidity-controlled chamber. Humidity is preferably applied to the HOPG to produce a film of water across the surface of the DNA sample. Electrical voltage is also applied to the HOPG to create potential energy for the etching process. After the etching is completed, the reaction area is typically rinsed with deionized water.

Disclosed is a method for etching graphene using a DNA sample of a predetermined DNA shape. The DNA sample is preferably placed onto a reaction area of a piece of highly oriented pyrolytic graphite (HOPG), and both the DNA sample and HOPG are then preferably placed into a humidity-controlled chamber. Humidity is preferably applied to the HOPG to produce a film of water across the surface of the DNA sample. Electrical voltage is also applied to the HOPG to create potential energy for the etching process. After the etching is completed, the reaction area is typically rinsed with deionized water.

The present application discloses a method of fabricating an anti-reflective film, comprising forming a zinc oxynitride layer on a substrate; annealing the zinc oxynitride layer; and etching the surface of the zinc oxynitride layer with an etching solution to form a micro lenses layer comprising a plurality of micro lenses on surface.

Included are the steps of: preparing a silicon carbide substrate having an epitaxial layer formed thereon; forming an upper-layer film on the epitaxial layer; and removing at least a portion of the upper-layer film in an outer peripheral portion of the silicon carbide substrate, and patterning the upper-layer film.