The invention relates to a method for making nanopores in thin layers or monolayers of transition metal dichalcogenides that enables accurate and controllable formation of pore within those thin layer(s) with sub-nanometer precision.

The invention relates to a method for making nanopores in thin layers or monolayers of transition metal dichalcogenides that enables accurate and controllable formation of pore within those thin layer(s) with sub-nanometer precision.

A system for electroplating a web of conductive material with a source material comprises a transport mechanism, an electrical contact, a plating bath, and at least one nozzle. The transport mechanism transports the web through the system. The electrical contact electrically engages the web to cause current to flow into the web. The plating bath contains a volume of an electrically conductive liquid contain ions of the source material. The nozzle is configured to flow a low electrical conductivity fluid onto the web. A portion of the web is immersed in the electrically conductive liquid. The current flowing in the web causes the ions of the source material in the electrically conductive liquid to attach to a surface of the portion of the web.

Systems and methods for electroless plating a first metal onto a second metal in a molten salt bath including: a bath vessel holding a dry salt mixture including a dry salt medium and a dry salt medium of the first metal, and without the reductant therein, the dry salt mixture configured to be heated to form a molten salt bath; and the second metal is configured to be disposed in the molten salt bath and receive a pure coating of the first metal thereon by electroless plating in the molten salt bath, wherein the second metal is more electronegative than the first metal.

A method and system for substantially reducing iron and organic impurities in carbon nanotube materials.

A method and system for substantially reducing iron and organic impurities in carbon nanotube materials.

A manufacturing method includes: (1) providing M-M′ nanowires, wherein M′ is at least one sacrificial metal different from M; and (2) subjecting the M-M′ nanowires to electrochemical de-alloying to form jagged M nanowires.

A manufacturing method includes: (1) providing M-M′ nanowires, wherein M′ is at least one sacrificial metal different from M; and (2) subjecting the M-M′ nanowires to electrochemical de-alloying to form jagged M nanowires.

Various technologies are described herein pertaining to electrochemical etching of a semiconductor controlled by way of a laser that emits light with an energy below a bandgap energy of the semiconductor.

Various technologies are described herein pertaining to electrochemical etching of a semiconductor controlled by way of a laser that emits light with an energy below a bandgap energy of the semiconductor.